Palliyage Srilak Nirmana Perera

Cette personne a quitté l’EPFL

À propos
Confidentialité
Mentions légales

Graph Chatbot

Publications associées (27)

Page 2 sur 2

Efficient High Step-up Operation in Boost Converters Based on Impulse Rectification

Elison de Nazareth Matioli, Armin Jafari, Palliyage Srilak Nirmana Perera

Conventional boost converters, while having a high level of simplicity and robustness, are known to have poor efficiency at high step-up regime. More complicated topologies have been extensively explored to increase the step-up ratio while keeping a high-e ...

2020

New Insights on Output Capacitance Losses in Wide-Band-Gap Transistors

Elison de Nazareth Matioli, Armin Jafari, Mohammad Samizadeh Nikooytabalvandani, Palliyage Srilak Nirmana Perera

The low ON-resistance of wide-band-gap (WBG) transistors is a key feature for efficient power converters, however, the anomalous loss in their output capacitance (COSS) severely limits their performance at high switching frequencies. Characterizing COSS-lo ...

2019

Comparison of Wide-band-gap Technologies for Soft-Switching Losses at High Frequencies

Elison de Nazareth Matioli, Armin Jafari, Mohammad Samizadeh Nikooytabalvandani, Palliyage Srilak Nirmana Perera, Reza Soleiman Zadeh Ardebili, Halil Kerim Yildirim

Soft-switching power converters based on wide-band-gap (WBG) transistors offer superior efficiency and power density advantages. However, at high frequencies, loss behavior varies significantly between different WBG technologies. This includes losses relat ...

2020

Negative Resistance in Cascode Transistors

Elison de Nazareth Matioli, Armin Jafari, Mohammad Samizadeh Nikooytabalvandani, Palliyage Srilak Nirmana Perera

Cascode topology which includes a high-voltage GaN and a low-voltage Si transistor is an attractive device concept, which uses the low ON-resistance of GaN while still being compatible with Si gate drivers. It demonstrates the highest threshold voltage amo ...

2020

Calibration-Free Calorimeter for Sensitive Loss Measurements: Case of High-Frequency Inductors

Elison de Nazareth Matioli, Remco Franciscus Peter van Erp, Armin Jafari, Palliyage Srilak Nirmana Perera, Enea Figini

Wide-band-gap technologies enable ultra-high efficiencies in high-frequency power conversion. However, inadequate accuracies in electrical measurements could lead to spurious efficiency measurements, even above 100%. Furthermore, bandwidth limitations, par ...

IEEE2020

In-Chip Microfluidic Cooling Integrated on GaN Power IC Reaching High Power Density of 78 kW/l

Ibrahim Osama Elhagali, Elison de Nazareth Matioli, Luca Nela, Remco Franciscus Peter van Erp, Palliyage Srilak Nirmana Perera, Hongkeng Zhu

The lateral structure of gallium nitride (GaN) semiconductors enables monolithic integration of logic and power devices, which offers promise to miniaturize bulky converters into a compact package. However, the concentrated heat that arises from this dense ...

2024

Performance of GaN Power Devices for Cryogenic Applications Down to 4.2 K

Elison de Nazareth Matioli, Luca Nela, Palliyage Srilak Nirmana Perera, Catherine Erine

Gallium nitride (GaN) power devices are employed in an increasing number of applications thanks to their excellent performance. Nevertheless, their potential for cryogenic applications, such as space, aviation, and superconducting systems, has not yet been ...

2021