Publications de Matteo Cavalieri

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This work investigates and reports on the radio-frequency (RF) behavior in the frequency range of 5 – 35 GHz of germanium-doped (Ge-doped VO2) vanadium dioxide thin films, deposited on silicon substrates via sputtering and pulsed laser deposition (PLD) wit ...

The new class of fully silicon-compatible hafnia-based ferroelectrics with high switchable polarization and good endurance and thickness scalability shows a strong promise for new generations of logic and memory devices. Among other factors, their competit ...

Ferroelectric materials offer a broad range of application-relevant properties, including spontaneous polarization switchable by electric field. Archetypical representatives of this class of materials are perovskites, currently used in applications ranging ...

HfO2-based ferroelectrics are considered a promising class of materials for logic and memory applications due to their CMOS compatibility and ferroelectric figures of merit. A steep-slope field-effect-transistor (FET) switch is a device for logic applicati ...

We report the fabrication process and performance characterization of a fully integrated ferroelectric gate stack in a WSe2/SnSe2 Tunnel FETs (TFETs). The energy behavior of the gate stack during charging and discharging, together with the energy loss of a ...

Nanowire tunnel field-effect transistors (TFETs) have been proposed as the most advanced one-dimensional (1D) devices that break the thermionic 60 mV/decade of the subthreshold swing (SS) of metal oxide semiconductor field-effect transistors (MOSFETs) by u ...

In this paper, we experimentally explore the transient negative capacitance effect in ferroelectric high-k gate stacks using multi-ferroelectric domain Si-doped HfO2 with and without the metal plane, MFMIS (TiN/Si:HfO2/TiN/SiO2) and MFIS (TiN/Si:HfO2/SiO2) ...

This letter introduces a reconfigurable planar square-coil-shaped inductor exploiting as the tuning mechanism the insulator-to-metal transition (IMT) of a vanadium dioxide (VO2) switch placed in the interwinding space in an unprecedented manner. The VO2 th ...

In this work we report the fabrication, co-integration and resulting performance of 2D/2D van der Waals (vdW) Vertical p-type Tunnel FETs and p-MOSFETs in a WSe2/SnSe2 material system. We demonstrate the best ever reported combined performance in terms of ...

Two-dimensional/two-dimensional (2D/2D) heterojunctions form one of the most versatile technological solutions for building tunneling field effect transistors because of the sharp and potentially clean interfaces resulting from van der Waals assembly. Seve ...

In this Letter, we report and investigate the temperature dependency of various radio frequency (RF) parameters for a fabricated reconfigurable bandstop filter with vanadium dioxide (VO2) switches measured up to 55 GHz. Here, the insulator-to-metal (ITM) a ...

We propose and experimentally demonstrate double-gated n-type WSe 2 FETs with excellent top gate high-k dielectric layer. Under back gate control, the devices behave as n-type enhancement transistors, with ON/OFF current ratios larger than 6 orders of magn ...

Recently, the field of Metal-Insulator-Transition (MIT) materials has emerged as an unconventional solution for novel energy efficient electronic functions, such as steep slope subthermionic switches, neuromorphic hardware, reconfigurable radiofrequency fu ...

Thin film metal-insulator-metal capacitors with undoped HfO2 as the insulator are fabricated by sputtering from ceramic targets and subsequently annealed. The influence of film thickness and annealing temperature is characterized by electrical and structur ...

This experimental study investigates a novel multi-functional one dimensional-two dimensional (1D-2D) heterojunction made of two different band-gap semiconductors, i.e. single-walled carbon nanotube (SWCNT) and tungsten di-selenide (WSe2). The proposed ult ...

In this work, we report an experimental investigation of pulsed laser deposition (PLD) of thin Gd:HfO2 layers at 330 degrees C, which show ferroelectric behavior after annealing at 450 degrees C, compatible with complementary metal-oxide-semiconductor back ...

In this work, we experimentally explore and compare FET gate stacks with and without an inner metal plane between a linear dielectric (SiO2) and a ferroelectric layer (Si-doped HfO2) operating in the negative capacitance (NC) regime. The use of nanosecond- ...

Matteo Cavalieri

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Radio-Frequency Characteristics of Ge-doped Vanadium Dioxide Thin Films with Increased Transition Temperature

Genuinely Ferroelectric Sub-1-Volt-Switchable Nanodomains in HfxZr(1-x)O2 Ultrathin Capacitors

Exploring ferroelectricity in HfO2-based thin films by tackling application-relevant challenges

Intrinsic switching in Si-doped HfO2: A study of Curie-Weiss law and its implications for negative capacitance field-effect transistor

Gate energy efficiency and negative capacitance in ferroelectric 2D/2D TFET from cryogenic to high temperatures

Nanowire Tunnel FET with Simultaneously Reduced Subthermionic Subthreshold Swing and Off-Current due to Negative Capacitance and Voltage Pinning Effects

Transient Negative Capacitance of Silicon-doped HfO2 in MFMIS and MFIS structures: experimental insights for hysteresis-free steep slope NC FETs

A Reconfigurable Inductor Based on Vanadium Dioxide Insulator-to-Metal Transition

Co-integrated Subthermionic 2D/2D WSe2/SnSe2 Vertical Tunnel FET and WSe2 MOSFET on same flake: towards a 2D/2D vdW Dual-Transport Steep Slope FET

WSe2/SnSe2 vdW heterojunction Tunnel FET with subthermionic characteristic and MOSFET co-integrated on same WSe2 flake

Temperature dependence of reconfigurable bandstop filters using vanadium dioxide switches

Double gate n-type WSe2 FETs with high-k top gate dielectric and enhanced electrostatic control

3D Smith charts scattering parameters frequency-dependent orientation analysis and complex-scalar multi-parameter characterization applied to Peano reconfigurable vanadium dioxide inductors

Origin of Ferroelectric Phase in Undoped HfO2 Films Deposited by Sputtering

An Experimental Study on Mixed-Dimensional 1D-2D van der Waals Single-Walled Carbon Nanotube-WSe2 Hetero-Junction

Experimental Investigation of Pulsed Laser Deposition of Ferroelectric Gd:HfO2 in a CMOS BEOL Compatible Process

Negative Capacitance in HfO2 Gate Stack Structures With and Without Metal Interlayer

Hysteresis Dynamics in Double-Gated n-Type WSe2 FETs With High-k Top Gate Dielectric