Andrea Ingenito

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Publications associées (27)

Recombination Analysis of Phosphorus-Doped Nanostructured Silicon Oxide Passivating Electron Contacts for Silicon Solar Cells

Christophe Ballif, Philippe Wyss, Franz-Josef Haug, Matthieu Despeisse, Gizem Nogay, Philipp Friedrich Hermann Löper, Josua Andreas Stückelberger, Andrea Ingenito

2018

Properties of mixed phase silicon-oxide-based passivating contacts for silicon solar cells

Christophe Ballif, Quentin Thomas Jeangros, Philippe Wyss, Franz-Josef Haug, Matthieu Despeisse, Iris Anita Mack, Gizem Nogay, Philipp Friedrich Hermann Löper, Josua Andreas Stückelberger, Andrea Ingenito

2018

Phosphorous-Doped Silicon Carbide as Front-Side Full-Area Passivating Contact for Double-Side Contacted c-Si Solar Cells

Christophe Ballif, Philippe Wyss, Franz-Josef Haug, Matthieu Despeisse, Gizem Nogay, Philipp Friedrich Hermann Löper, Josua Andreas Stückelberger, Andrea Ingenito, Luca Gnocchi

We present an electron selective passivating contact based on a tunneling SiOx capped with a phosphorous doped siliconcarbideandpreparedwithahigh-temperaturethermalanneal. We investigate in detail the effects of the preparation conditions of theSiCx(n)(i.e ...

2018

A passivating contact for silicon solar cells formed during a single firing thermal annealing

Christophe Ballif, Quentin Thomas Jeangros, Franz-Josef Haug, Matthieu Despeisse, Monica Morales Masis, Gizem Nogay, Philipp Friedrich Hermann Löper, Oscar Esteban Rucavado Leandro, Andrea Ingenito

Passivating contacts are indispensable for achieving high conversion efficiency in crystalline-silicon solar cells. Their realization and integration into a convenient process flow have become crucial research objectives. Here, we report an alternative pas ...

2018

Crystalline Silicon Solar Cells With Coannealed Electron- and Hole-Selective SiCx Passivating Contacts

Christophe Ballif, Quentin Thomas Jeangros, Philippe Wyss, Franz-Josef Haug, Monica Morales Masis, Gizem Nogay, Philipp Friedrich Hermann Löper, Josua Andreas Stückelberger, Oscar Esteban Rucavado Leandro, Andrea Ingenito

We present electron- and hole-selective passivating contacts based on wet-chemically grown interfacial SiOx and overlying in-situ doped silicon carbide (SiCx) deposited by plasma-enhanced chemical vapor deposition. After annealing at 850 degrees C, excelle ...

2018

A passivating contact concept compatible with a short thermal treatment

Christophe Ballif, Philippe Wyss, Franz-Josef Haug, Matthieu Despeisse, Gizem Nogay, Josua Andreas Stückelberger, Andrea Ingenito

In this study we present a boron-doped silicon carbide layers as a hole-selective contact which is compatible with short annealing time (typically < 1 minute) as the one used for firing of metal pastes. The application of such layers on symmetrically proce ...

IEEE2018

Impact Impact of different capping layers on carrier injection efficiency between amorphous and crystalline silicon measured using photoluminescence

Gizem Nogay, Philipp Friedrich Hermann Löper, Andrea Ingenito

Intrinsic amorphous silicon provides excellent surface passivation on crystalline silicon. It has previously been shown, that carriers that are photo generated in the amorphous silicon can be efficiently electronically injected into the crystalline silicon ...

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