Publications de Andrea Giunto | EPFL Graph Search

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In recent years, the automotive industry has aspired to bring self-driving vehicles to the general public and light detection and ranging (LiDAR) sensors have emerged as the preferred solution for car vision systems. At present, LiDAR technologies employ e ...

Barium zirconium sulfide (BaZrS3) is an earth-abundant and environmentally friendly chalcogenide perovskite with promising properties for various energy conversion applications. Recently, sulfurization of oxide precursors has been suggested as a viable sol ...

GeSn is a promising group-IV semiconductor material for on-chip Si photonics devices and high-mobility transistors. These devices require the use of doped GeSn regions, achieved preferably in situ during epitaxy. From the electronic valence point of view, ...

We demonstrate monocrystalline growth of GeSn on Ge and Si substrates by co-sputtering. We discuss the evolution of film growth with thickness, elucidating the effects of substrate temperature, sputtering source, and the importance of hydrogen dilution in ...

A thin film grown on a substrate to which the attractive forces are of lower strength than covalent, metallic and/or ionic bonds can be detached from the substrate without the need of a Smart-cut type of process, e.g. without the need of ion implantation. ...

GeSn has emerged as a promising semiconductor with optoelectronic functionality in the mid-infrared, with the potential of replacing expensive III-V technology for monolithic on-chip Si photonics. Multiple challenges to achieve optoelectronic-grade GeSn ha ...

The employment of other group IV materials, such as alloys of germanium and tin, poses a solution for overcoming the efficiency limit of silicon that arises from its indirect bandgap. By using THz spectroscopy, the optoelectronic properties, such as conduc ...

Andrea Giunto

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GeSn as next-generation material for short-wave infrared single-photon detection

Understanding the growth mechanism of BaZrS3 chalcogenide perovskite thin films from sulfurized oxide precursors

Surfactant behavior and limited incorporation of indium during in situ doping of GeSn grown by molecular beam epitaxy

Co-Sputtered Monocrystalline GeSn for Infrared Photodetection

Layer transfer of epitaxial layers and thin films obtained by van der waals growth initiation

Defects in Ge and GeSn and their impact on optoelectronic properties

THz characterization of GeSn monocrystalline thin films