Publications de Hokwon Kim | EPFL Graph Search

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High-quality and large-scale growth of monolayer molybdenum disulfide (MoS2) has caught intensive attention because of its potential in many applications due to unique electronic properties. Here, we report the wafer-scale growth of high-quality monolayer ...

Toward the large-area deposition of MoS2 layers, we employ metal–organic precursors of Mo and S for a facile and reproducible van der Waals epitaxy on c-plane sapphire. Exposing c-sapphire substrates to alkali metal halide salts such as KI or NaCl together ...

We have evaluated as-grown MoS2 crystals, epitaxially grown on a monocrystalline sapphire by chemical vapor deposition (CVD), with direct electronic band-structure measurements by energy-filtered k-space photoelectron emission microscopy performed with a c ...

Using laboratory X-ray photoelectron emission microscopy (XPEEM), we investigated the doping efficiency and thermal stability of iodine on as-grown graphene on Pt. After iodine adsorption of graphene in saturated vapor of I-2, monolayer and bilayer graphen ...

Hokwon Kim

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Wafer-scale MOCVD growth of monolayer MoS2 on sapphire and SiO2

Suppressing Nucleation in Metal–Organic Chemical Vapor Deposition of MoS2

Free-standing electronic character of monolayer

Doping characteristics of iodine on as-grown chemical vapor deposited graphene on Pt