Heidi Andrea Potts

Cette personne n’est plus à l’EPFL

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Publications associées (28)

Molecular beam epitaxy of InAs nanowires in SiO2 nanotube templates: challenges and prospects for integration of III-Vs on Si

Anna Fontcuberta i Morral, Jean-Baptiste Leran, Federico Matteini, Frank Meyer, Ruben Ricca, Jelena Vukajlovic Plestina, Heidi Andrea Potts, Vladimir Dubrovskii

Guided growth of semiconductor nanowires in nanotube templates has been considered as a potential platform for reproducible integration of III-Vs on silicon or other mismatched substrates. Herein, we report on the challenges and prospects of molecular beam ...

Institute of Physics2016

Understanding and exploiting optical properties in semiconductor nanowires for solar energy conversion

Anna Fontcuberta i Morral, Esther Alarcon Llado, Federico Matteini, Heidi Andrea Potts

Semiconductor nanowires are promising building blocks for next generation solar energy conversion at low cost, due to their large absorption cross-sections. Here, the understanding of their absorption power is explored via computational and experimental me ...

IEEE2016

Optical properties of GaAsSb nanowire networks and GaAs nanomembranes

Alessandro Surrente, Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Jean-Baptiste Leran, Martin George Friedl, Heidi Andrea Potts

Ieee2016

Quantum Heterostructures Based on GaAs Nanomembranes for Photonic Applications

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Jean-Baptiste Leran, Federico Matteini, Martin George Friedl, Heidi Andrea Potts

Ieee2016

Wetting of Ga on SiOx and Its Impact on GaAs Nanowire Growth

Gözde Tütüncüoglu, Federico Matteini, Fauzia Jabeen, Heidi Andrea Potts

Ga-assisted growth of GaAs nanowires on silicon provides a path for integrating high-purity III-Vs on silicon. The nature of the oxide on the silicon surface has been shown to impact the overall possibility of nanowire growth and their orientation with the ...

American Chemical Society2015

High Yield of GaAs Nanowire Arrays on Si Mediated by the Pinning and Contact Angle of Ga

Anna Fontcuberta i Morral, Anna Dalmau Mallorquí, Gözde Tütüncüoglu, Sonia Conesa Boj, Eleonora Russo, Federico Matteini, Jelena Vukajlovic Plestina, Heidi Andrea Potts

GaAs nanowire arrays on Silicon offer great perspectives in the :optoeleetronics and solar cell industry. To fulfill this potential, gold-free growth in predetermined positions should be achieved. Ga-assisted growth of GaAs nano-wires in the form of array ...

American Chemical Society2015

Nonstoichiometric Low-Temperature Grown GaAs Nanowires

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Federico Matteini, Heidi Andrea Potts, Tao Xu

The structural and electronic properties of nonstoichiometric low-temperature grown GaAs nanowire shells have been investigated with scanning tunneling microscopy and spectroscopy, pump probe reflectivity, and cathodoluminescence measurements. The growth o ...

American Chemical Society2015

Towards defect-free 1-D GaAs/AlGaAs heterostructures based on GaAs nanomembranes

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Davide Deiana, Federico Matteini, Heidi Andrea Potts

We demonstrate the growth of defect-free zinc-blende GaAs nanomembranes by molecular beam epitaxy. Our growth studies indicate a strong impact of As-4 re-emission and shadowing in the growth rate of the structures. The highest aspect ratio structures are o ...

Royal Soc Chemistry2015

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