Publications de Francesca Amaduzzi

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III-V nanowires are candidate building blocks for next generation electronic and optoelectronic platforms. Low bandgap semiconductors such as In As and InSb are interesting because of their high electron mobility. Fine control of the structure, morphology, ...

In recent years, semiconductor nanowires have attracted considerable attention as a result of their unique properties and potential applications in many fields. In particular, they can be very attractive materials for certain optoelectronic and electronic ...

In order to realize many devices based on semiconductor nanowires, reliable doping is essential. For such devices, it is important that the electron mobility is not compromised by doping incorporation. Here, we show that core-shell GaAs/AlGaAs nanowires ca ...

We report on the use of photonic resonances in Raman spectroscopy on single nanowires for the enhancement of forbidden modes and the study of the interaction of phonons with free-carriers. This is achieved by suspending nanowire over a trench and detecting ...

III-V nanosttuctures have the potential to revolutionize optoelectronics and energy harvesting. For this to become a reality, critical issues such as reproducibility and sensitivity to defects should be resolved. By discussing the optical properties of mol ...

Optical-pump terahertz-prohe (OPTP) spectroscopy is a powerful, non-contact tool for extracting the electrical conductivity within a material. In this work, we show how OPTP spectroscopy can he used to extract the temperature-dependent electron mobility an ...

Obtaining light emission from silicon has been the holy grail of optoelectronics over the last few decades. One of the most common methods for obtaining light emission from silicon is to reduce it to a nanoscale structure, for example by producing porous s ...

Thanks to their special interaction with light, semiconductor nanowires have opened new avenues in photonics, quantum optics and solar energy harvesting. One of the major challenges for their full technological deployment has been their strong polarization ...

Due to its non-destructive and its micro-spatial resolution, Raman spectroscopy is a powerful tool for a rapid structural and compositional characterization of nanoscale materials. Here, by combining the compositional dependence of the Raman peaks with the ...

Reliable doping in semiconductor nanowires is essential for the development of novel optoelectronic devices. Dopant incorporation within the nanowire can allow for optimisation of key optoelectronic properties, such as electron mobility and carrier lifetim ...

importance for semiconductor nanowires because of the high surface-to-volume ratio and only little is known about the consequences of oxidation for these systems. Here, we study the properties of indium arsenide nanowires which were locally oxidized using ...

Francesca Amaduzzi

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From Twinning to Pure Zincblende Catalyst-Free InAs(Sb) Nanowires

Functional properties of III-V nanowires addressed by Raman spectroscopy

Terahertz spectroscopy of modulation doped core-shell GaAs/AlGaAs nanowires

Tuning the response of non-allowed Raman modes in GaAs nanowires

Revealing Large-Scale Homogeneity and Trace Impurity Sensitivity of GaAs Nanoscale Membranes

Unveiling Temperature-Dependent Scattering Mechanisms in Semiconductor Nanowires Using Optical-Pump Terahertz-Probe Spectroscopy

Nanoporous silicon tubes: the role of geometry in nanostructure formation and application to light emitting diodes

Polarization response of nanowires a la carte

Probing inhomogeneous composition in core/shell nanowires by Raman spectroscopy

Investigations of doping via optical pump terahertz-probe spectroscopy

Morphology and composition of oxidized InAs nanowires studied by combined Raman spectroscopy and transmission electron microscopy