Publications de Dmitry Ovchinnikov

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Two-dimensional (2D) materials are under intensive investigation recently due to variety of electronic properties, ranging from insulators (h-BN) to semi-metals (graphene), semiconductors (MoS2, WSe2) with wide variability of band-gap and correlated phases ...

Toward the large-area deposition of MoS2 layers, we employ metal–organic precursors of Mo and S for a facile and reproducible van der Waals epitaxy on c-plane sapphire. Exposing c-sapphire substrates to alkali metal halide salts such as KI or NaCl together ...

Atomically thin rhenium disulphide (ReS2) is a member of the transition metal dichalcogenide family of materials. This two-dimensional semiconductor is characterized by weak interlayer coupling and a distorted 1T structure, which leads to anisotropy in ele ...

We give here an overview on our results on the large-area growth of 2D transition metal dichalcogenide semiconductors MoS2, MoSe2, WSe2 using chemical vapor deposition. The growth of MoS2 on sapphire occurs epitaxially with the crystalline orientation of t ...

The absorption spectra of 2D semiconductors are dominated by excitons with binding energy of several hundreds of meV. Nevertheless, even single layers show an appreciable photovoltaic effect and work as the active material in high sensitivity photodetector ...

Graphene is very popular because of its many fascinating properties, but its lack of an electronic bandgap has stimulated the search for 2D materials with semiconducting character. Transition metal dichalcogenides (TMDCs), which are semiconductors of the t ...

Making use of the osmotic pressure difference between fresh water and seawater is an attractive, renewable and clean way to generate power and is known as 'blue energy'(1-3). Another electrokinetic phenomenon, called the streaming potential, occurs when an ...

We present a systematic investigation of the electronic properties of bulk and few layer ReS2 van der Waals crystals using low temperature optical spectroscopy. Weak photoluminescence emission is observed from two non-degenerate band edge excitonic transit ...

We report on the growth of molybdenum disulphide (MoS2) using H2S as a gas-phase sulfur precursor that allows controlling the domain growth direction of domains in both vertical (perpendicular to the substrate plane) and horizontal (within the substrate pl ...

The band structure of transition metal dichalcogenides (TMDCs) with valence band edges at different locations in the momentum space could be harnessed to build devices that operate relying on the valley degree of freedom. To realize such valleytronic devic ...

We report on the fabrication of field-effect transistors based on single layers and bilayers of the semiconductor WS2 and the investigation of their electronic transport properties. We find that the doping level strongly depends on the device environment a ...

Dmitry Ovchinnikov

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Influence of structural and electrostatic disorder on transport properties of monolayers of two-dimensional semiconductors

Suppressing Nucleation in Metal–Organic Chemical Vapor Deposition of MoS2

Disorder engineering and conductivity dome in ReS2 with electrolyte gating

High-quality Synthetic 2D Transition Metal Dichalcogenide Semiconductors

Field-induced charge separation dynamics in monolayer MoS2

2D transition metal dichalcogenides

Single-layer MoS2 nanopores as nanopower generators

Non equilibrium anisotropic excitons in atomically thin ReS2

Large-area MoS2 grown using H2S as the sulphur source

Valley polarization by spin injection in a light-emitting van der Waals heterojunction

Electrical Transport Properties of Single-Layer WS2