Jelena Vukajlovic Plestina

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Silicon is today the main material used in electronics. It is a very advanced and mature technology. It is therefore clear that new technological concepts and materials should be introduced through the integration on the silicon platform. III-V semiconduct ...

III-V semiconductor nanowires deterministically placed on top of silicon electronic platform would open many avenues in silicon-based photonics, quantum technologies and energy harvesting. For this to become a reality, gold-free site-selected growth is nec ...

State-of-the art models for statistical properties within the nanowire ensembles consider influx of precursors, reflection and surface diffusion of adatoms. These models predict a delay in the nanowire growth start and the evolution toward an asymmetric le ...

Semiconducting piezoelectric materials have attracted considerable interest due to their central role in the emerging field of piezotronics, where the development of a piezo-potential in response to stress or strain can be used to tune the band structure o ...

Studying nanomaterial piezoelectricity and triboelectricity is attractive for energy and sensing applications. However, quantitative characterisation of electromechanical effects in nanomaterials is challenging due to practical limitations and possible com ...

We demonstrate the existence of two stable contact angles for the gallium droplet on top of self-assisted GaAs nanowires grown by MBE on patterned silicon substrates. Contact angle around 130 degrees fosters a continuous increase in the nanowire radius, wh ...

Jelena Vukajlovic Plestina

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Ordered nanostructures on silicon substrates : from the top-down to the bottom-up

Fundamental aspects to localize self-catalyzed III-V nanowires on silicon

Dataset for "Does desorption affect the length distributions of nanowires?"

Highly sensitive piezotronic pressure sensors based on undoped GaAs nanowire ensembles

Time-resolved open-circuit conductive atomic force microscopy for direct electromechanical characterisation

Bi-stability of contact angle and its role in tuning the morphology of self-assisted GaAs nanowires