Jens Christian Johannsen

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The study of the electronic band structure of solids is a central task in materials science. Indeed, knowing a material's band structure is key to an understanding of its macroscopic electronic properties. In recent years, a new class of materials has emer ...

Bulk Rashba systems BiTeX (X = I, Br, Cl) are emerging as important candidates for developing spintronics devices because of the coexistence of spin-split bulk and surface states, along with the ambipolar character of the surface charge carriers. The need ...

The electronic structure of two-dimensional (2D) semiconductors can be significantly altered by screening effects, either from free charge carriers in the material or by environmental screening from the surrounding medium. The physical properties of 2D sem ...

Time- and angle-resolved photoemission measurements on two doped graphene samples displaying different doping levels reveal remarkable differences in the ultrafast dynamics of the hot carriers in the Dirac cone. In the more strongly (n-)doped graphene, we ...

Long known for its peculiar resistivity, showing a thus far unexplained anomalous peak as a function of temperature, ZrTe5 has recently received rising attention in a somewhat different context. While both theoretical and experimental results seem to point ...

Bilayer graphene is a highly promising material for electronic and optoelectronic applications since it is supporting massive Dirac fermions with a tunable band gap. However, no consistent picture of the gap's effect on the optical and transport behavior h ...

LiCu3O3 is an antiferromagnetic mixed valence cuprate where trilayers of edge -sharing Cu(II)O (3d9) are sandwiched in between planes of Cu(I) (3d10) ions, with Li stochastically substituting Cu(II). Angle resolved photoemission spectroscopy (ARPES) and de ...

We investigate the evolution of both the occupied and unoccupied electronic structure in representative compounds of the infinitely adaptive superlattice series (Sb2)m−Sb2Te3 (m=0–3) by means of angle-resolved photoemission spectroscopy and time-delayed tw ...

The nature of the Dirac quasiparticles in topological insulators calls for a direct investigation of the electron-phonon scattering at the surface. By comparing time-resolved ARPES measurements of the topological insulator Bi2Se3 with different probing dep ...

The quasiparticle spectra of atomically thin semiconducting transition metal dichalcogenides (TMDCs) and their response to an ultrafast optical excitation critically depend on interactions with the underlying substrate. Here, we present a comparative time- ...

In order to exploit the intriguing optical properties of graphene it is essential to gain a better understanding of the light-matter interaction in the material on ultrashort timescales. Exciting the Dirac fermions with intense ultrafast laser pulses trigg ...

The interaction of light with a material's electronic system creates an out-of-equilibrium (non-thermal) distribution of optically excited electrons. Non-equilibrium dynamics relaxes this distribution on an ultrafast timescale to a hot Fermi-Dirac distribu ...

The dynamics of excited electrons and holes in single layer (SL) MoS2 have so far been difficult to disentangle from the excitons that dominate the optical response of this material. Here, we use time- and angle-resolved photoemission spectroscopy for a SL ...

In pump-probe time and angle-resolved photoemission spectroscopy (TR-ARPES) experiments the presence of the pump pulse adds a new level of complexity to the photoemission process in comparison to conventional ARPES. This is evidenced by pump-induced vacuum ...

We present an overview of the new family of semiconductors BiTeX (X = I, Br, Cl) from the perspective of angle resolved photoemission spectroscopy. The strong band bending occurring at the surface potentially endows them with a large flexibility, as they a ...

Jens Christian Johannsen

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Electronic Structure of Graphene and Topological Insulators : Frequency and Time-domain Perspectives

Momentum and photon energy dependence of the circular dichroic photoemission in the bulk Rashba semiconductors BiTeX (X = I, Br, Cl)

Ultrafast Band Structure Control of a Two-Dimensional Heterostructure

Tunable Carrier Multiplication and Cooling in Graphene

Nature and topology of the low-energy states in ZrTe5

Ultrafast Dynamics of Massive Dirac Fermions in Bilayer Graphene

Electron Glass Phase with Resilient Zhang-Rice Singlets in LiCu3O3

Engineering the topological surface states in the (Sb2)m−Sb2Te3(m=0–3) superlattice serie

Evidence of reduced surface electron-phonon scattering in the conduction band of Bi2Se3 by nonequilibrium ARPES

Spectroscopic view of ultrafast charge carrier dynamics in single- and bilayer transition metal dichalcogenide semiconductors

Ultrafast electron dynamics in epitaxial graphene investigated with time- and angle-resolved photoemission spectroscopy

Extracting the temperature of hot carriers in time- and angle-resolved photoemission

Observation of Ultrafast Free Carrier Dynamics in Single Layer MoS2

Ramifications of optical pumping on the interpretation of time-resolved photoemission experiments on graphene

Bulk and surface band structure of the new family of semiconductors BiTeX (X=I, Br, Cl)