Publications de Jean-Michel Jacques Lamy

Publications associées (5)

Low temperature p-type doping of (Al)GaN layers using ammonia molecular beam epitaxy for InGaN laser diodes

Nicolas Grandjean, Eric Feltin, Denis Martin, Julien Dorsaz, Antonino Francesco Castiglia, Marco Malinverni, Jean-Michel Jacques Lamy

We demonstrate state-of-the-art p-type (Al) GaN layers deposited at low temperature (740 degrees C) by ammonia molecular beam epitaxy (NH3-MBE) to be used as top cladding of laser diodes (LDs) with the aim of further reducing the thermal budget on the InGa ...

Amer Inst Physics2014

Dimensioning a full color LED microdisplay for augmented reality headset in a very bright environment

Eric Feltin, Jean-Michel Jacques Lamy

This paper focuses on the dimensioning of a very bright full color 10 mu m-pitch light-emitting device (LED) microdisplay for avionics application. Starting from the specifications of head-mounted display to be used in an augmented reality optical system, ...

WILEY2020

InGaN laser diodes emitting at 500 nm with p-layers grown by molecular beam epitaxy

Nicolas Grandjean, Eric Feltin, Denis Martin, Julien Dorsaz, Antonino Francesco Castiglia, Marco Rossetti, Marco Malinverni, Jean-Michel Jacques Lamy, Lise Lahourcade

We demonstrate hybrid laser diodes by combining n-type layers and an active region grown by metal organic vapor phase epitaxy with p-type layers grown by molecular beam epitaxy. These p-doped layers, grown at 740 degrees C, exhibit state-of-the-art electri ...

Japan Society of Applied Physics2015

Static and dynamic properties of multi-section InGaN-based laser diodes

Nicolas Grandjean, Jean-François Carlin, Dmitri Boiko, Julien Dorsaz, Antonino Francesco Castiglia, Luca Alex Milo Sulmoni, Xi Zeng, Jean-Michel Jacques Lamy

We have studied multi-section InGaN multiple-quantum-well (MQW) laser diodes grown on c-plane freestanding GaN substrate consisting of an absorber section (AS) and an amplifier gain section. As a result of the interplay between external bias applied to the ...

Amer Inst Physics2012

Effect of applied bias voltage on the static and dynamic characteristics of self-pulsating multi-section InGaN-based laser diode

Nicolas Grandjean, Jean-François Carlin, Dmitri Boiko, Luca Alex Milo Sulmoni, Xi Zeng, Jean-Michel Jacques Lamy

Ieee2012