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As the scaling of complementary metal-oxide-semiconductor (CMOS) technology is reaching fundamental limitations, novel device concepts and materials have started to be investigated to overcome the scaling challenges for integrated circuits. Graphene has be ...

We report the first experimental demonstration and performance characterization of a fully integrated negative capacitance (NC) WSe2/SnSe2 p-type Tunnel FETs (TFETs), validating the use of NC as a technology booster to achieve a significantly improved sub- ...

We report the fabrication, modeling and characterization of novel microwave tunable capacitors based on the metal-insulator transition (MIT) of Vanadium Dioxide (VO2) as a future replacement solution for microelectromechanical capacitive switches. We prese ...

We report a thorough investigation of the electrically-induced metal-insulator transition in vanadium dioxide (VO2) for abrupt switching in 2-terminal devices (0.24 mV/dec at 25 °C, 0.38 mV/dec at 50 °C). We exploit the electrothermal actuation model based ...

We report the fabrication, modeling and characterization of novel microwave tunable capacitors based on the metal-insulator transition (MIT) of Vanadium Dioxide (VO2). We present the advantages of VO2-based capacitors over alternative technologies for micr ...

Vanadium dioxide thin films were deposited on amorphous SiO2-coated Si substrates, by reactive magnetron sputtering at 490 °C of a pure vanadium target. The deposition parameters were optimized in order to maximize the resistivity modulation due to the met ...

The fabrication of a Nanoelectromechanical System (NEMS) capacitive switch consisting of a suspended multilayer graphene membrane, doubly clamped on a coplanar waveguide (CPW) is presented and its RF performance is evaluated. The scattering parameters are ...

In this paper, two THz reflectarray surfaces have been designed and fabricated in order to deflect a plane wave with any polarization and with a specific incident angle to three different specific directions each at distinct three frequencies of 0.7, 1.0 a ...

Clara-Fausta Moldovan

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Enabling High Frequency Reconfigurable Functions with Graphene

Fully integrated Si:HfO2 Negative Capacitance 2D-2D WSe2/SnSe2 Subthermionic Tunnel FETs

Electrothermal actuation of vanadium dioxide for tunable capacitors and microwave filters with integrated microheaters

Investigation of the metal-insulator transition in VO2 for Electronic Switches with Sub-1mV/Decade Steep Subthreshold Slope

Tunable Capacitors and Microwave Filters Based on Vanadium Dioxide Metal-Insulator Transition

Fabrication of CMOS-compatible abrupt electronic switches based on vanadium dioxide

Fabrication process and characterization of suspended graphene membranes for RF NEMS capacitive switches

Design, Fabrication and Characterization of Terahertz Reflectarrays Based on a Silicon Substrate

Tri-Band, Polarization-Independent Reflectarray at Terahertz Frequencies: Design, Fabrication, and Measurement

Evaluation of graphene for terahertz reflectarray antennas

Spatial Variability in Large Area Single and Few-layer CVD Graphene

Growth optimization of vanadium dioxide films on SiO2/Si substrates

CMOS-compatible abrupt switches based on VO2 metal-insulator transition

Performance evaluation of novel technologies for terahertz reflectarrays

Graphene RF NEMS shunt switches for analog and digital phase shifters