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An analytical calculation of the acoustic transmission loss of sound propagating through a thin cylindrically curved piezoelectric membrane, which is rigidly clamped at its straight ends, is presented. The membrane is placed inside an acoustic tube and con ...

Impurity elements used as dopants are essential to semiconductor technology for controlling the concentration of charge carriers. Their location in the semiconductor crystal is determined during the fabrication process and remains fixed. However, another p ...

Strain engineering is a widespread strategy used to enhance performance of devices based on semiconductor thin films. In ferroelectrics strain engineering is used to control the domain pattern: When an epitaxial film is biaxially compressed, e.g. due to la ...

Hetero interfaces between metal-oxides display pronounced phenomena such as semiconductor-metal transitions, magnetoresistance, the quantum hall effect and superconductivity. Similar effects at compositionally homogeneous interfaces including ferroic domai ...

An adaptive system for the suppression of vibration transmission using a single piezoelectric actuator shunted by a negative capacitance circuit is presented. It is known that by using a negative-capacitance shunt, the spring constant of a piezoelectric ac ...

Conductive domain walls (DWs) in ferroic oxides as device elements are a highly attractive research topic because of their robust and agile response to electric field. Charged DWs possessing metallic-type conductivity hold the highest promises in this aspe ...

In the pursuit of ferroic-based (nano) electronics, it is essential to minutely control domain patterns and domain switching. The ability to control domain width, orientation and position is a prerequisite for circuitry based on fine domains. Here, we deve ...

The charged domain wall is an ultrathin (typically nanosized) interface between two domains; it carries bound charge owing to a change of normal component of spontaneous polarization on crossing the wall. In contrast to hetero-interfaces between different ...

Charged domain walls in ferroelectric materials are of high interest due to their potential use in nanoelectronic devices. While previous approaches have utilized complex scanning probe techniques or frustrative poling here we show the creation of charged ...

Miniaturization of conventional field effect transistors (FETs) approaches the fundamental limits beyond which opening and closing the transistor channel require higher gate voltage swing and cause higher power dissipation and heating. This problem could b ...

Ferroelectrics are widespread in technology(1), being used in electronics and communications(2), medical diagnostics and industrial automation. However, extension of their operational temperature range and useful properties is desired(3-5). Recent developm ...

The motion of ferroelectric domain walls greatly contributes to the macroscopic dielectric and piezoelectric response of ferroelectric materials. The domain-wall motion through the ferroelectric material is, however, hindered by pinning on crystal defects, ...

Using the Landau theory we demonstrate the possibility of unusual, anomalously thick ferroelectric domain walls, where the order parameter rotates with a nearly constant modulus as in ferromagnets. The effect occurs in 90 degrees charged domain walls and i ...

Enhancement of ferroelectric properties, both spontaneous polarization and Curie temperature under negative pressure had been predicted in the past from first principles and recently confirmed experimentally. In contrast, piezoelectric properties are expec ...

In contrast to the flexible rotation of magnetization direction in ferromagnets, the spontaneous polarization in ferroelectric materials is highly confined along the symmetry-allowed directions. Accordingly, chirality at ferroelectric domain walls was trea ...

Charged domain walls in proper ferroelectrics were shown recently to possess metallic-like conductivity. Unlike conventional heterointerfaces, these walls can be displaced inside a dielectric by an electric field, which is of interest for future electronic ...

The present invention relates to a device including a ferroic material having a ferroelectric order parameter and including at least two domains, as well as a first and second electrode in electrical contact with the ferroic material. The device is configu ...

The velocity of individual 1800 domain walls in thin ferroelectric films of PbZr0.1Ti0.9O3 is strongly dependent on the thickness of the top Pt electrode made by electron-beam induced deposition (EBID). We show that when the thickness is varied in the rang ...

While commonly used piezoelectric materials contain lead, non-hazardous, high-performance piezoelectrics are yet to be discovered. Charged domain walls in ferroelectrics are considered inactive with regards to the piezoelectric response and, therefore, are ...

Tomas Sluka

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A theory of sound transmission through a clamped curved piezoelectric membrane connected to a negative capacitor

Polarization charge as a reconfigurable quasi-dopant in ferroelectric thin films

Charge screening strategy for domain pattern control in nano-scale ferroelectric systems

Free-electron gas at charged domain walls in insulating BaTiO3

Adaptive Vibration Suppression System: An Iterative Control Law for a Piezoelectric Actuator Shunted by a Negative Capacitor

Controlled Charging of Ferroelastic Domain Walls in Oxide Ferroelectrics

Controlled stripes of ultrafine ferroelectric domains

Physics and applications of charged domain walls

Controlled creation and displacement of charged domain walls in ferroelectric thin films

Static negative capacitance of a ferroelectric nano-domain nucleus

Negative-pressure-induced enhancement in a freestanding ferroelectric

Identification of defect distribution at ferroelectric domain walls from evolution of nonlinear dielectric response during the aging process

Anomalously thick domain walls in ferroelectrics

Piezoelectric enhancement under negative pressure

Neel-like domain walls in ferroelectric Pb(Zr,Ti)O-3 single crystals

Formation of charged ferroelectric domain walls with controlled periodicity

Electronic elements based on quasitwo-dimensional electron/hole gas at charged domain walls in ferroelectrics

Velocity Control of 180 degrees Domain Walls in Ferroelectric Thin Films by Electrode Modification

Adaptive Vibration Suppression System: An Iterative Control Law for a Piezoelectric Actuator Shunted by a Negative Capacitor (vol 59, pg 2785, 2012)

Enhanced electromechanical response of ferroelectrics due to charged domain walls