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Anna Fontcuberta i Morral

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Publications associées (286)

Understanding the growth mechanism of BaZrS3 chalcogenide perovskite thin films from sulfurized oxide precursors

Anna Fontcuberta i Morral, Elias Zsolt Stutz, Andrea Giunto, Santhanu Panikar Ramanandan, Iléane Tiphaine Françoise Marie Lefevre, Mirjana Dimitrievska

Barium zirconium sulfide (BaZrS3) is an earth-abundant and environmentally friendly chalcogenide perovskite with promising properties for various energy conversion applications. Recently, sulfurization of oxide precursors has been suggested as a viable sol ...

IOP Publishing Ltd2023

Surfactant behavior and limited incorporation of indium during in situ doping of GeSn grown by molecular beam epitaxy

Anna Fontcuberta i Morral, Andrea Giunto, Thomas Hagger, Louise Emma Webb

GeSn is a promising group-IV semiconductor material for on-chip Si photonics devices and high-mobility transistors. These devices require the use of doped GeSn regions, achieved preferably in situ during epitaxy. From the electronic valence point of view, ...

AMER PHYSICAL SOC2023

From Layer-by-Layer Growth to Nanoridge Formation: Selective Area Epitaxy of GaAs by MOVPE

Alok Rudra, Anna Fontcuberta i Morral, Nicholas Paul Morgan, Marie Sophie Sanglé-Ferrière, Didem Dede, Valerio Piazza, Ann-Kristin Stief, Vladimir Dubrovskii

We outline the growth mechanismand shape evolution of GaAsnanoridges by selective area MOVPE with three well-identified, distinctstages of growth. ...

AMER CHEMICAL SOC2023

Nanoscale Growth Initiation as a Pathway to Improve the Earth-Abundant Absorber Zinc Phosphide

Anna Fontcuberta i Morral, Elias Zsolt Stutz, Jean-Baptiste Leran, Mahdi Zamani, Simon Robert Escobar Steinvall, Rajrupa Paul, Mirjana Dimitrievska

Growth approaches that limit the interface area between layers to nanoscale regions are emerging as a promising pathway to limit the interface defect formation due to mismatching lattice parameters or thermal expansion coefficient. Interfacial defect mitig ...

AMER CHEMICAL SOC2022

Generation of Human iPSC-Derived Neurons on Nanowire Arrays Featuring Varying Lengths, Pitches, and Diameters

Anna Fontcuberta i Morral, Wonjong Kim

Nanowire (NW) arrays interfaced with biological cells have been demonstrated to be potent tools for advanced applications such as sensing, stimulation, or drug delivery. Many implementations, however, have so far only been studied with rather robust basic ...

WILEY2022

Low Dimensional III-V and II-VI Semiconductors

Anna Fontcuberta i Morral, Nicholas Paul Morgan, Didem Dede

Journal Article Low Dimensional III-V and II-VI Semiconductors Get access Didem Dede, Didem Dede École Polytechnique Fédérale de Lausanne. Search for other works by this author on: Oxford Academic Google Scholar Nicholas Morgan, Nicholas Morgan École Polyt ...

Oxford University Press (OUP)2022

Generation of Human iPSC‐Derived Neurons on Nanowire Arrays Featuring Varying Lengths, Pitches, and Diameters (Adv. Mater. Interfaces 24/2022)

Anna Fontcuberta i Morral, Wonjong Kim

Generation of Human iPSC-Derived Neurons on Nanowire Arrays Human induced pluripotent stem cells (iPSCs) are used to generate functional neurons while being cultured on nanowire arrays. The variation of the substrate geometries such as nanowire length and ...

Wiley2022

Boron quantification, concentration mapping and picosecond excitons dynamics in High-Pressure-High-Temperature diamond by cathodoluminescence

Anna Fontcuberta i Morral, Nicolas Tappy

Diamond is one of the most promising materials for high power and extreme conditions electronics. For this to become a reality, incorporation of active dopants needs to be understood. In this article we demonstrate how cathodoluminescence spectroscopy can ...

2022

Strain induced lifting of the charged exciton degeneracy in monolayer MoS2 on a GaAs nanomembrane

Anna Fontcuberta i Morral, Akshay Balgarkashi, Didem Dede, Mitali Banerjee, Valerio Piazza

Strain is a commonly used tool to tune the optoelectronic properties of semiconductors. It is especially effective for transition metal dichalcogenides (TMDs), which can withstand extreme strain up to 10%. To date, localised strain fields have been applied ...

IOP Publishing Ltd2022

Dataset for "GaAs nanowires on Si nanopillars: towards large scale, phase-engineered arrays"

Anna Fontcuberta i Morral, Jean-Baptiste Leran, William Craig Carter, Nicholas Paul Morgan, Lea Ghisalberti, Wonjong Kim, Akshay Balgarkashi, Didem Dede

Large-scale patterning for vapor-liquid-solid growth of III-V nanowires is a challenge given the required feature size for patterning (45 to 60 nm holes). In fact, arrays are traditionally manufactured using electron-beam lithography,for which processing t ...

Zenodo2022

Light emission properties of mechanical exfoliation induced extended defects in hexagonal boron nitride flakes

Anna Fontcuberta i Morral, Nicolas Tappy

Recently, hexagonal boron nitride (hBN) has become an interesting platform for quantum optics due to its peculiar defect-related luminescence properties. Concomitantly, hBN was established as the ideal insulating support for realizing 2D materials devices, ...

IOP Publishing Ltd2022

Nanoscale Mapping of Light Emission in Nanospade-Based InGaAs Quantum Wells Integrated on Si(100): Implications for Dual Light-Emitting Devices

Anna Fontcuberta i Morral, Jean-Baptiste Leran, Nicolas Tappy, Nicholas Paul Morgan, Raphaël François Lemerle, Wonjong Kim, Akshay Balgarkashi, Titouan Charvin, Didem Dede, Valerio Piazza

III-V semiconductors outperform Si in many optoelectronics applications due to their high carrier mobility, efficient light emission and absorption processes, and the possibility to engineer their band gap through alloying. However, complementing Si techno ...

2022

GaAs nanowires on Si nanopillars: towards large scale, phase-engineered arrays

Anna Fontcuberta i Morral, Jean-Baptiste Leran, Nicholas Paul Morgan, Lea Ghisalberti, Wonjong Kim, Akshay Balgarkashi, Didem Dede

2022

Coherent Hole Transport in Selective Area Grown Ge Nanowire Networks

Alok Rudra, Anna Fontcuberta i Morral, Nicholas Paul Morgan, Andrea Giunto, Santhanu Panikar Ramanandan

Holes in germanium nanowires have emerged as a realistic platform for quantum computing based on spin qubit logic. On top of the large spin–orbit coupling that allows fast qubit operation, nanowire geometry and orientation can be tuned to cancel out charge ...

American Chemical Society (ACS)2022

Showcasing the optical properties of monocrystalline zinc phosphide thin films as an earth-abundant photovoltaic absorber

Anna Fontcuberta i Morral, Elias Zsolt Stutz, Jean-Baptiste Leran, Léa Buswell, Mahdi Zamani, Simon Robert Escobar Steinvall, Rajrupa Paul, Mirjana Dimitrievska

Zinc phosphide, Zn3P2, is a semiconductor with a high absorption coefficient in the spectral range relevant for single junction photovoltaic applications. It is made of elements abundant in the Earth's crust, opening up a pathway for large deployment of so ...

2022

Raman tensor of zinc-phosphide (Zn3P2): from polarization measurements to simulation of Raman spectra

Anna Fontcuberta i Morral, Elias Zsolt Stutz, Jean-Baptiste Leran, Mahdi Zamani, Santhanu Panikar Ramanandan, Rajrupa Paul, Mirjana Dimitrievska, Mischa Samuel Flór

Zinc phosphide (Zn3P2) is a II–V compound semiconductor with promising photovoltaic and thermoelectric applications. Its complex structure is susceptible to facile defect formation, which plays a key role in further optimization of the material. Raman spec ...

2022

Selective area epitaxy of GaAs: the unintuitive role of feature size and pitch

Anna Fontcuberta i Morral, Lucas Güniat, Martin George Friedl, Nicholas Paul Morgan, Akshay Balgarkashi, Didem Dede, Elif Nur Dayi, Valerio Piazza, Vladimir Dubrovskii

Selective area epitaxy (SAE) provides the path for scalable fabrication of semiconductor nanostructures in a device-compatible configuration. In the current paradigm, SAE is understood as localized epitaxy, and is modelled by combining planar and self-asse ...

IOP Publishing Ltd2022

Stoichiometry modulates the optoelectronic functionality of Zinc Phosphide (Zn3-xP2+x)

Anna Fontcuberta i Morral, Elias Zsolt Stutz, Jean-Baptiste Leran, Mahdi Zamani, Maria Chiara Spadaro, Simon Robert Escobar Steinvall, Santhanu Panikar Ramanandan, Rajrupa Paul, Diego Armando Sandoval Salaiza, Mirjana Dimitrievska, Mischa Samuel Flór

Predictive synthesis–structure–property relationships are at the core of materials design for novel applications. In this regard, correlations between the compositional stoichiometry variations and functional properties are essential for enhancing the perf ...

2022

Image shift correction, noise analysis, and model fitting of (cathodo-)luminescence hyperspectral maps

Anna Fontcuberta i Morral, Nicolas Tappy

Hyperspectral imaging is an important asset of modern spectroscopy. It allows us to perform optical metrology at a high spatial resolution, for example in cathodoluminescence in scanning electron microscopy. However, hyperspectral datasets present added ch ...

2022

Porous Nitride Light-Emitting Diodes

Anna Fontcuberta i Morral, Nicolas Tappy, Nuno Amador Mendez

A porous InGaN/GaN blue light-emitting diode is demonstrated using selective area sublimation. Transmission electron microscopy reveals that the structure is porous down to the Si substrate; however, the porosity is higher in the GaN buffer, while smaller ...

2022

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