Mihai Adrian Ionescu, Luca De Michielis, Livio Lattanzio, Cem Alper
The electron-hole bilayer tunnel field-effect transistor (EHBTFET) is an electronic switch that uses 2-D-2-D sub-band-to-sub-band tunneling (BTBT) between electron and hole inversion layers and shows significant subthermal swing over several decades of cur ...
Ieee-Inst Electrical Electronics Engineers Inc2013
