Publications de Anas Mouti | EPFL Graph Search

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We study in this thesis the structural origin of defect insensitive light emission in indium containing group-III nitride ternary alloys grown on sapphire, which are the active materials for the commercially available high brightness blue diodes. These str ...

Evidence of composition fluctuations around threading dislocations at scales ranging from atomic distances to tens of nanometers is provided by z-contrast imaging, strain measurement, and energy dispersive x-ray spectroscopy in AlxIn1-x N/GaN heterostructu ...

High mobility Al0.28Ga0.72N/GaN two-dimensional electron gas (2DEG) is achieved on ( 111) oriented single crystal diamond substrate. The surface morphology of the epilayer is free of cracks thanks to the use of an AlN interlayer for strain relaxation. The ...

An AlInN/AlGaN microcavity (MC) containing a GaN/Al0.2Ga0.8N multiple quantum well (MQW) structure is investigated through room temperature (RT) photoluminescence and reflectivity experiments. A vacuum Rabi splitting as large as 50 meV at RT is reported fo ...

A novel approach based on the Stober method allows breaking of the symmetry of core-shell systems based on metallic core and metal oxide shell. By adjusting the proportion of the TiO2 precursor with regard to the silica precursor, different morphologies of ...

Anas Mouti

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Defect Insensitive Light Emission in Blue Diode Materials Investigated by Electron Microscopy and Transmission Cathodoluminescence

Stress-modulated composition in the vicinity of dislocations in nearly lattice matched AlxIn1-x N/GaN heterostructures: A possible explanation of defect insensitivity

High-Mobility AlGaN/GaN Two-Dimensional Electron Gas Heterostructure Grown on (111) Single Crystal Diamond Substrate

Large vacuum Rabi splitting in a multiple quantum well GaN-based microcavity in the strong-coupling regime

Core-shell Au@(TiO2, SiO2) nanoparticles with tunable morphology

Temperature-dependent low electric field charging of Si nanocrystals embedded within oxide–nitride–oxide dielectric stacks

Oxide–nitride–oxide dielectric stacks with Si nanoparticles obtained by low-energy ion beam synthesis

Convergence of Microscopy techniques: An application to dislocation pit characteristics

Cathodoluminescence in a (S)TEM – Exploring Possibilities and Limits

Nanocrystals in High-k Dielectric Stacks for Non-Volatile Memory Applications