Publications de Philippe Wyss | EPFL Graph Search

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We present a novel passivating contact structure based on a nanostructured silicon-based layer. Traditional poly-Si junctions feature excellent junction characteristics but their optical absorption induces current losses when applied to the solar cell fron ...

High temperature passivating contacts for c-Si based solar cells are intensively studied because of their potential in boosting solar cell efficiency while being compatible with industrial processes at high temperatures. In this work, the hydrogenation mec ...

The use of passivating contacts compatible with typical homojunction thermal processes is one of the most promising approaches to realizing high-efficiency silicon solar cells. In this work, we investigate an alternative rear-passivating contact targeting ...

This study evaluates the secondary electron (SE) dopant contrast in scanning electron microscopy (SEM) and helium ion microscopy (HIM) on boron implanted silicon sample. Complementary techniques like secondary ion mass spectrometry and electrochemical capa ...

In this article, the effect of the various processing steps during the fabrication of c-Si/SiOx/SiCx fired passivating contacts on the silicon bulk lifetime is studied, and the kinetics of defect deactivation by hydrogenation is investigated. It is found t ...

We present a p-type passivating rear contact that complies with integration into standard solar cell manufacturing with phosphorus-diffused front side. Our contact structure consists of a thin SiOx tunneling layer grown by wet chemistry and a stack of laye ...

Passivating contacts are key enablers for high efficiency c-Si solar cells. Here, we present our latest advancement in terms of implementation and understanding in fired passivating contacts (FPC) used as rear p + passivating contact in p-type solar cells. ...

Polysilicon recombination junctions whose n-type bottom layers double as a passivating contact to the silicon surface are investigated. Such recombination junctions are a key element in the interconnection of tandem devices with a silicon bottom cell, and ...

In this study we present a boron-doped silicon carbide layers as a hole-selective contact which is compatible with short annealing time (typically < 1 minute) as the one used for firing of metal pastes. The application of such layers on symmetrically proce ...

We present electron- and hole-selective passivating contacts based on wet-chemically grown interfacial SiOx and overlying in-situ doped silicon carbide (SiCx) deposited by plasma-enhanced chemical vapor deposition. After annealing at 850 degrees C, excelle ...

Philippe Wyss

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Passivating electron contact based on highly crystalline nanostructured silicon oxide layers for silicon solar cells

Analysis of hydrogen distribution and migration in fired passivating contacts (FPC)

Silicon-Rich Silicon Carbide Hole-Selective Rear Contacts for Crystalline-Silicon-Based Solar Cells

Evaluation of secondary electron intensities for dopant profiling in ion implanted semiconductors: a correlative study combining SE, SIMS and ECV methods

Bulk Defects and Hydrogenation Kinetics in Crystalline Silicon Solar Cells With Fired Passivating Contacts

A Mixed-Phase SiOx Hole Selective Junction Compatible With High Temperatures Used in Industrial Solar Cell Manufacturing

Implementation and understanding of p plus fired rear hole selective tunnel oxide passivating contacts enabling > 22% conversion efficiency in p-type c-Si solar cells

Passivating Polysilicon Recombination Junctions for Crystalline Silicon Solar Cells

A passivating contact concept compatible with a short thermal treatment

Crystalline Silicon Solar Cells With Coannealed Electron- and Hole-Selective SiCx Passivating Contacts