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Marko Burghard

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Publications associées (55)

Valley-polarized massive charge carriers in gapped graphene

Klaus Kern, Marko Burghard, Eva Carmen Peters

The lifting of the fourfold degeneracy of the zeroth Landau level in graphene under high magnetic fields has been the subject of numerous experimental studies, and attributed to various mechanisms such as pure spin splitting, spin splitting combined with s ...

Amer Physical Soc2013

Efficient Charge Extraction out of Nanoscale Schottky Contacts to CdS Nanowires

Klaus Kern, Marko Burghard, Thomas Dufaux

Charge recombination dynamics in semiconductor nanostructures is of vital importance for photovoltaic or photodetector device applications. We use local photocurrent measurements to explore spatially separated drift- and diffusion-currents close to the edg ...

American Chemical Society (ACS)2012

Electric field effect in graphite crystallites

Klaus Kern, Kannan Balasubramanian, Marko Burghard, Adarsh Singh Sagar

Graphite is a highly anisotropic crystal with a quasi-two-dimensional electronic structure exhibiting high intrinsic charge carrier mobility. Here, we investigate the effect of an electric field on the resistance of individual graphite crystallites with a ...

AIP American Institute of Physics2012

Two-dimensional magnetotransport in Bi2Te2Se nanoplatelets

Klaus Kern, Marko Burghard, Pascal Gehring

Single-crystalline Bi2Te2Se nanoplates with thicknesses between 8 and 30 nm and lateral sizes of several micrometers were synthesized by a vapour-solid growth method. Angle-dependent magnetoconductance measurements on individual nanoplates revealed the pre ...

AIP American Institute of Physics2012

Charge transport gap in graphene antidot lattices

Klaus Kern, Marko Burghard, Eva Carmen Peters

Graphene antidot lattices (GALs) offer an attractive approach to band-gap engineering in graphene. Theoretical studies indicate that the size of the opened gap is sensitive to the shape, size, and architecture of the nanoholes introduced into the graphene ...

Amer Physical Soc2012

Gate-controlled linear magnetoresistance in thin Bi2Se3 sheets

Klaus Kern, Marko Burghard, Pascal Gehring

We explore the emergence of linear magnetoresistance in thin Bi2Se3 sheets upon tuning the carrier density using a back gate. With increasingly negative gate voltage, a pronounced magnetoresistance of similar to 100% is observed, while the associated B-fie ...

AIP American Institute of Physics2012

Growth of High-Mobility Bi2Te2Se Nanoplatelets on hBN Sheets by van der Waals Epitaxy

Klaus Kern, Marko Burghard, Pascal Gehring

The electrical detection of the surface states of topological insulators is strongly impeded by the interference of bulk conduction, which commonly arises due to pronounced doping associated with the formation of lattice defects. As exemplified by the topo ...

Amer Chemical Soc2012

The Graphene-Gold Interface and Its Implications for Nanoelectronics

Klaus Kern, Marko Burghard, Ravi Shankar Sundaram

We combine optical microspectroscopy and electronic measurements to study how gold deposition affects the physical properties of graphene. We find that the electronic structure, the electron-phonon coupling, and the doping level in gold-plated graphene are ...

American Chemical Society (ACS)2011

Electronic properties and atomic structure of graphene oxide membranes

Klaus Kern, Daniela Pacilè, Marko Burghard, Ravi Shankar Sundaram

We have performed a near-edge X-ray absorption fine-structure (NEXAFS) and a transmission electron microscopy (TEM) investigation of freely suspended graphene oxide (GO) sheets. We utilized a photoemission electron microscope to identify GO membranes and t ...

2011

Polymer-electrolyte gated graphene transistors for analog and digital phase detection

Klaus Kern, Kannan Balasubramanian, Marko Burghard, Adarsh Singh Sagar

We present an alternating current (ac) circuit based on a misoriented bilayer graphene device for analog and digital phase detection. We exploit the ambipolar nature of the transfer characteristics of a misoriented bilayer graphene transistor. The transist ...

AIP American Institute of Physics2011

Scanning Tunneling Luminescence of Individual CdSe Nanowires

Klaus Kern, Marko Burghard, Alexander Kabakchiev, Theresa Lutz, Thomas Dufaux, Zhe Wang

The local luminescence properties of individual CdSe nanowires composed of segments of zinc blende and wurtzite crystal structures are investigated by low-temperature scanning tunneling luminescence spectroscopy. Light emission from the wires is achieved b ...

2011

Atomic Structure of Reduced Graphene Oxide

Klaus Kern, Marko Burghard, Ravi Shankar Sundaram

Using high resolution transmission electron microscopy. we identify the specific atomic scale features in chemically derived graphene monolayers that originate from the oxidation-reduction treatment of graphene. The layers are found to comprise defect-free ...

American Chemical Society (ACS)2010

Photocurrent Distribution in Graphene-CdS Nanowire Devices

Klaus Kern, Marko Burghard, Thomas Dufaux

2010

Electrical Properties and Photoconductivity of Stacked-Graphene Carbon Nanotubes

Klaus Kern, Marko Burghard, Eduardo Jian Hua Lee

Stacked-graphene carbon nanotubes (SG-CNTs) obtained via pyrolysis of columnar superstructures of polycyclic aromatic hydrocarbons are studied by electrical transport measurements and scanning photocurrent microscopy. The charge transport in individual SG- ...

Wiley2010

Surface plasmon coupling to nanoscale Schottky-type electrical detectors

Klaus Kern, Marko Burghard, Thomas Dufaux

We have investigated the near-field coupling of surface plasmons to a titanium/CdS nanowire interface for two different device configurations. A bare aluminum grating on an underlying aluminum layer exhibited the expected stronger electrical signal for per ...

AIP American Institute of Physics2010

Gate dependent photocurrents at a graphene p-n junction

Klaus Kern, Marko Burghard, Eduardo Jian Hua Lee, Eva Carmen Peters

We have used scanning photocurrent microscopy to explore the electronic characteristics of a graphene p-n junction fabricated by local chemical doping of a graphene sheet. The photocurrent signal at the junction was found to be most prominent for gate volt ...

AIP American Institute of Physics2010

A Graphene Nanoribbon Memory Cell

Klaus Kern, Marko Burghard, Floriano Traversi

2010

Effect of Stacking Order on the Electric-Field Induced Carrier Modulation in Graphene Bilayers

Klaus Kern, Kannan Balasubramanian, Marko Burghard, Eduardo Jian Hua Lee, Adarsh Singh Sagar

When planar graphene sheets are stacked on top of each other, the electronic structure of the system varies with the position of the subsequent sublattice atoms. Here, we employ scanning photocurrent microscopy to study the disparity in the behavior of cha ...

American Chemical Society (ACS)2009

Chemical Vapor Deposition Repair of Graphene Oxide: A Route to Highly Conductive Graphene Monolayers

Klaus Kern, Marko Burghard, Ravi Shankar Sundaram

Highly conductive chemically derived graphene can be synthesized using an efficient two-step method starting from graphene oxide. The key strategy involves the use of a CVD process to heal defects contained within the monolayers, which imparts a two order ...

Wiley2009

Highly Reliable Carbon Nanotube Transistors with Patterned Gates and Molecular Gate Dielectric

Klaus Kern, Marko Burghard, Ralf Thomas Weitz, Hagen Klauk

The prospect of realizing nanoscale transistors using individual semiconducting carbon nanotubes offers enormous potential, both as an alternative to silicon technology beyond conventional scaling limits and as a way to implement high-speed devices and cir ...

American Chemical Society (ACS)2009

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