Andrei Caliman

Cette personne a quitté l’EPFL

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Publications associées (50)

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Cavity Mode—Gain Peak Tradeoff for 1320-nm Wafer-Fused VCSELs With 3-mW Single-Mode Emission Power and 10-Gb/s Modulation Speed Up to 70° C''

Elyahou Kapon, Alexandru Mereuta, Vladimir Iakovlev, Andrei Caliman, Grigore Suruceanu

2007

85 W VECSEL output at 1270 nm with conversion efficiency of 59 %

Elyahou Kapon, Alexandru Mereuta, Alexei Sirbu, Vladimir Iakovlev, Andrei Caliman

We report on 1270 nm vertical-external-cavity surface-emitting lasers (VECSELs) with up to 59% conversion efficiency and maximum output power of 8.5 W (pump limited), at 5 degrees C heat sink temperature. These VECSELs comprised wafer-fused gain mirrors in ...

Optical Society of America2015

Polarisation stabilisation of vertical cavity surface emitting lasers by minimally invasive focused electron beam triggered chemistry

Elyahou Kapon, Alexandru Mereuta, Alexei Sirbu, Vladimir Iakovlev, Andrei Caliman, Ivo Utke

2011

Transverse mode discrimination in long-wavelength wafer-fused vertical-cavity surface-emitting lasers by intra-cavity patterning

Elyahou Kapon, Benjamin Dwir, Alexandru Mereuta, Alexei Sirbu, Vladimir Iakovlev, Andrei Caliman, Pascal Gallo, Zlatko Mickovic, Nicolas Volet, Lukas Mutter

Transverse mode discrimination is demonstrated in long-wavelength wafer-fused vertical-cavity surface-emitting lasers using ring-shaped air gap patterns at the fused interface between the cavity and the top distributed Bragg reflector. A significant number ...

Optical Society of America2013

High Fundamental Mode Power, High Speed InAlGaAs/AlGaAs 1310 and 1550-nm Wafer-Fused VCSELs

Elyahou Kapon, Alexandru Mereuta, Alexei Sirbu, Vladimir Iakovlev, Andrei Caliman, Grigore Suruceanu

InAlGaAs/AlGaAs-based wafer-fused long-wavelength VCSELs with tunnel junction injection emitting in the 1310 nm and 1550 nm bands show high single-mode output and high speed modulation capabilities of 10 Gbps. Fundamental emission close to 6 mW at room tem ...

Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2009

Reliability of 1310 nm Wafer Fused VCSELs

Elyahou Kapon, Alexandru Mereuta, Alexei Sirbu, Vladimir Iakovlev, Andrei Caliman, Grigore Suruceanu, Zlatko Mickovic

Wafer fusion vertical cavity surface emitting laser (VCSEL) technology has produced devices that successfully passed all mechanical and electrical Telcordia qualification tests. Accelerated lifetime tests result in times to 1% failure at 70 degrees C of 18 ...

Ieee-Inst Electrical Electronics Engineers Inc2013

Andrei Caliman

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Cavity Mode—Gain Peak Tradeoff for 1320-nm Wafer-Fused VCSELs With 3-mW Single-Mode Emission Power and 10-Gb/s Modulation Speed Up to 70° C''

85 W VECSEL output at 1270 nm with conversion efficiency of 59 %

Polarisation stabilisation of vertical cavity surface emitting lasers by minimally invasive focused electron beam triggered chemistry

Transverse mode discrimination in long-wavelength wafer-fused vertical-cavity surface-emitting lasers by intra-cavity patterning

High Fundamental Mode Power, High Speed InAlGaAs/AlGaAs 1310 and 1550-nm Wafer-Fused VCSELs

Reliability of 1310 nm Wafer Fused VCSELs

In(Al)GaAs–AlGaAs Wafer Fused VCSELs Emitting at 2µm Wavelength

2.6W optically-pumped semiconductor disk laser operating at 1.57µm using wafer fusion

1150nm wavelength InGaAs/GaAs VCSELs incorporating regrown tunnel junctions

Low power consumption 1310 nm VCSELs for 4x10 Gbps CWDM links