Publications de Andrei Caliman

Chattez avec Graph Search

Posez n’importe quelle question sur les cours, conférences, exercices, recherches, actualités, etc. de l’EPFL ou essayez les exemples de questions ci-dessous.

AVERTISSEMENT : Le chatbot Graph n'est pas programmé pour fournir des réponses explicites ou catégoriques à vos questions. Il transforme plutôt vos questions en demandes API qui sont distribuées aux différents services informatiques officiellement administrés par l'EPFL. Son but est uniquement de collecter et de recommander des références pertinentes à des contenus que vous pouvez explorer pour vous aider à répondre à vos questions.

Class A shot-noise limited operation is achieved in an electrically pumped vertical external cavity surface emitting laser (VECSEL), opening the way for integration of such peculiar noiseless laser oscillation in applications where low power consumption an ...

We report the first (to our knowledge) wafer-fused high-power passively mode-locked semiconductor disk laser operating at 1.57 mu m wavelength. An InP-based active medium was fused with GaAs/AlGaAs distributed Bragg reflector on a 2 inch wafer level, resul ...

A widely-tunable single-mode 1.3 mu m vertical-cavity surface-emitting laser structure incorporating a microelectromechanical system-tunable high-index-contrast subwavelength grating (HCG) mirror is suggested and numerically investigated. A linear tuning r ...

Optically pumped vertical external cavity surface emitting lasers (VECSELs) based on flip-chip gain mirrors emitting at the 1.55 mu m wavelength range are reported. The gain mirrors employ wafer-fused InAlGaAs/InP quantum well heterostructures and GaAs/AlA ...

1300-nm, 1550-nm and 1480-nm wavelength, optically-pumped VECSELs based on wafer-fused InAlGaAs/InPAlGaAs/GaAs gain mirrors with intra-cavity diamond heat-spreaders demonstrate very low thermal impedance of 4 K/W. Maximum CW output of devices with5 groups ...

Optically-pumped vertical external cavity surface emitting lasers (VECSELs) based on flip-chip gain mirrors emitting at the 1.55-mu m wavelength range are reported. The gain mirrors employ wafer-fused InAlGaAs/InP quantum well heterostructures and GaAs/AlA ...

Optically pumped wafer fused 1310 nm VECSELs have the advantage of high output power and wavelength agility. Gain mirrors in these lasers are formed by direct bonding of InAlGaAs/InP active cavities to Al(Ga) As/GaAs DBRs. We present for the first time Wat ...

Digital chemical etching is used to trim the output mirror thickness of wafer-fused VCSELs emitting at a wavelength near 1.5 mu m. The fine control of the photon cavity lifetime thus achieved is employed to extract important device parameters and optimize ...

We investigate experimentally the impact of photon cavity lifetime variations on the static and dynamic performance of high-speed 1.3-mu m wavelength wafer-fused vertical-cavity surface-emitting lasers (VCSELs). The photon lifetime is modified by decreasin ...

1310 nm Wavelength VCSELs produce single mode emission in excess of 1 mW in the temperature range of 20-70 degrees C with a very low relative intensity noise of -148 dB/Hz. These devices have a broad tuning range of similar to 50 cm(-1) with variable tempe ...

We report on fabrication and performance of wafer fused, high power, passively mode-locked semiconductor disc lasers operating in 1310 nm and 1550 nm bands. These devices comprise gain mirrors based on InAlGaAs/InP multi quantum well active regions fused t ...

Direct modulation at > 25 Gbps is achieved with 1310 nm wavelength wafer fused VCSELs by adjusting the strain in the quantum well active region and the cavity photon lifetime. 25 + Gbps large signal modulation with 10(-12) BER at 1310 nm across 10 km of st ...

Spectral dependence of Lamb coupling constant C is experimentally investigated in an InGaAlAs Quantum Wells active medium. An Optically-Pumped Vertical-External-Cavity Surface-Emitting Laser is designed to sustain the oscillation of two orthogonally polari ...

We report 1.3-mu m mode-locked optically pumped semiconductor disk laser (SDL) made by wafer fusion. The gain medium and the saturable absorber, both based on an InP material system, were integrated with AlGaAs-GaAs distributed Bragg reflectors by localize ...

We present the static and optical injection response of wafer-fused long-wavelength VCSELs with and without intracavity patterning. It is found that the extra optical cavity patterning increases the gain anisotropy between orthogonal polarization modes, in ...

Emission wavelength setting of 1310nm-waveband VCSELs designed for coarse wavelength division multiplexing (CWDM) 4x10 Gbps fiber-optics transmission can be controlled thanks to the wafer fusion fabrication approach. This approach allows performing the cav ...

We report the injection locking of specific spatial modes and polarization modes of 1.3 mu m wavelength vertical surface emitting lasers (VCSELs) in single-aperture devices and phase-coupled arrays. The optical injection is realized using a master laser (M ...

Recent progress in the fabrication and performance of 1.3-mu m 10-Gb/s, low power consumption wafer-fused VCSELs grown by MOVPE under nitrogen atmosphere are presented and discussed. By optimization of the growth conditions and implementation of a cavity a ...

We report on the single mode emission power enhancement of 1.3-mu m VCSELs by adjusting the reflectivity of the top GaAs-based DBR for output coupling optimization using selective removal of Bragg reflector layers. Devices with record single mode power of ...

We report for the first time on the performance of 1300 nm waveband semiconductor disc lasers (SDLs) with wafer fused gain mirrors that implement intracavity diamond and flip-chip heat dissipation schemes based on the same gain material. With a new type of ...

Andrei Caliman

Chattez avec Graph Search

Electrically pumped shot-noise limited class A VECSEL at telecom wavelength

Power-scalable 1.57µm mode-locked semiconductor disk laser using wafer fusion

Broadband MEMS-Tunable High-Index-Contrast Subwavelength Grating Long-Wavelength VCSEL

Flip-Chip Wafer-Fused OP-VECSELs Emitting 3.65 W at the 1.55-mu m Waveband

High-power optically-pumped VECSELs emitting in the 1310-nm and 1550-nm wavebands

1.55-mu m wavelength wafer-fused OP-VECSELs in flip-chip configuration

Wafer-fused VECSELs emitting in the 1310 nm waveband

Control of cavity lifetime of 1.5 mu m wafer-fused VCSELs by digital mirror trimming

Effect of Cavity Lifetime Variation on the Static and Dynamic Properties of 1.3-μm Wafer-Fused VCSELs

Near-infrared wafer-fused vertical-cavity surface-emitting lasers for HF detection

Wafer-Fused 1310 nm and 1550 nm Mode-Locked Semiconductor Disk Lasers

25 Gbps direct modulation and 10 km data transmission with 1310 nm waveband wafer fused VCSELs

Direct measurement of the spectral dependence of Lamb coupling constant in a dual frequency quantum well-based VECSEL

1.3-μm Mode-Locked Disk Laser With Wafer Fused Gain and SESAM Structures

Optical Injection and Lasing Dynamics in Long-Wavelength VCSELs With Intracavity Patterning

Wavelength control in fabrication of wafer fused VCSELs emitting in the 1310 nm waveband

Optical injection locking of polarization modes and spatial modes in single-aperture VCSELs and VCSEL arrays emitting at 1.3 mu m

Fabrication and performance of 1.3-mu m 10-Gb/s CWDM wafer-fused VCSELs grown by MOVPE

Increasing single mode power of 13-μm VCSELs by output coupling optimization

High performance wafer-fused semiconductor disk lasers emitting in the 1300 nm waveband