Publications de Alexandru Mereuta

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A high-power InAs quantum dot (QD) vertical-external-cavity surface-emitting laser emitting at 1.5 mu m is reported. The active region employs 20 layers of high-density Stranski-Krastanow InAs quantum dots on an InP substrate. The QD density and emission w ...

We report on the single mode emission power enhancement of 1.3-mu m VCSELs by adjusting the reflectivity of the top GaAs-based DBR for output coupling optimization using selective removal of Bragg reflector layers. Devices with record single mode power of ...

We report for the first time on the performance of 1300 nm waveband semiconductor disc lasers (SDLs) with wafer fused gain mirrors that implement intracavity diamond and flip-chip heat dissipation schemes based on the same gain material. With a new type of ...

3 W at genuine red wavelength of 650 nm has been achieved from a semiconductor disk laser by frequency doubling. An InP based active medium was fused with a GaAs/AlGaAs distributed Bragg reflector resulting in an integrated monolithic gain mirror. 6.6 W of ...

We experimentally investigate the Lamb coupling constant C in InGaAlAs Quantum Wells active medium. An Optically-Pumped Vertical-External-Cavity Surface-Emitting Laser emitting at 1.54 mu m is designed to sustain the oscillation of two orthogonally polariz ...

Over the last years we have continuously improved the performance of 1300 nm band VECSELs with wafer fused gain mirrors in the intra-cavity diamond and the flip-chip heat dissipation configurations. In this work we present recent results for gain mirrors t ...

Polarization mode control is enhanced in wafer-fused verticalcavity surface-emitting lasers emitting at 1310 nm wavelength by etching two symmetrically arranged arcs above the gain structure within the laser cavity. The intracavity patterning introduces bi ...

25 Gb/s transmission over 10 km of standard single mode fiber is demonstrated for 1300 nm wafer fused InP/GaAs VCSELs with increased strain in quantum wells and higher output coupling from the cavity. ...

Currently, wafer-fusion technology represents an effective technique for enhancing the performance of long-wavelength vertical cavity surface-emitting lasers (VCSELs) based on classical double heterostructures with multi-quantum well active regions. Using ...

Recent developments of wafer-fused long-wavelength VECSELs resulted in reaching record high CW output power of 6.6 W at 1300 nm and a coherence length longer than 5 km in fiber and 1 Watt of output power in single frequency regime at 1550 nm. First wafer-f ...

A mode-locked Raman fiber laser pumped by 1.3 mu m semiconductor disk laser is demonstrated. Direct Watt-level core-pumping of the single-mode fiber Raman lasers and amplifiers with low-noise disk lasers is demonstrated to represent a highly practical solu ...

A single frequency wafer-fused semiconductor disk laser at 1.56 mu m with 1 watt of output power and a coherence length over 5 km in fiber is demonstrated. The result represents the highest output power reported for a narrow-line semiconductor disk laser o ...

This paper presents an extensive numerical analysis of 1.3-mu m wavelength wafer-fused vertical-cavity surface-emitting lasers (VCSELs) incorporating intracavity patterning. Using a 3-D, self-consistent model of the physical phenomena in VCSELs, supported ...

Applications of long-wavelength (lambda > 1 mu m) vertical-cavity surface-emitting lasers (VCSELs) generally require close control over wavelength and polarization of the emitted light. In most cases, single mode and polarization stable lasing is desired. ...

Record-high fundamental mode output power of 1.5 mW at 100 degrees C is achieved with InAlGaAs-InP/AlGaAs-GaAs 1550 nm wavelength vertical cavity surface emitting lasers (VCSELs) produced by a modified wafer fusion technique. A broad wavelength setting on ...

We report on the design, fabrication and characterization of electrically pumped vertical external cavity surface emitting lasers (EP-VECSELs) emitting at 1470 nm. We demonstrate 6.2 mW of CW output power, which represents the highest power value reported ...

The invention refers to a method of manufacturing an optoelectronic device and in particular a method of manufacturing a vertical cavity surface emitting device incorporating wafer fused reflectors. ...

Optical injection locking of 1.3-mu m phase-locked VCSEL arrays defined by patterned tunnel junctions and wafer fusion is investigated experimentally and theoretically. The impact of the overlap between the master laser injection beam and the injected mode ...

Alexandru Mereuta

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InAs/InP quantum dot VECSEL emitting at 1.5 mu m

Increasing single mode power of 13-μm VCSELs by output coupling optimization

High performance wafer-fused semiconductor disk lasers emitting in the 1300 nm waveband

3 W of 650 nm red emission by frequency doubling of wafer-fused semiconductor disk laser

Mode Coupling Measurement in Dual-Frequency Quantum Well-based VECSEL

Recent progress in wafer-fused VECSELs emitting in the 1310 nm waveband

Polarization mode control of long-wavelength VCSELs by intracavity patterning

>25 Gbps direct modulation and data transmission with 1310 nm waveband wafer fused VCSELs

Wafer-fused heterostructures : application to vertical cavity surface-emitting lasers emitting in the 1310 nm band

Recent progress in wafer-fused VECSELs emitting in the 1310nm and 1550nm bands

1.38-μm mode-locked Raman fiber laser pumped by semiconductor disk laser

156 µm 1 watt single frequency semiconductor disk laser

Numerical Analysis of Mode Discrimination by Intracavity Patterning in Long-Wavelength Wafer-Fused Vertical-Cavity Surface-Emitting Lasers

3.125Gb/s modulation up to 70°C using 1.3µm VCSELs fabricated with localized wafer fusion for 10GBASE LX4 applications

Polarization mode structure in long-wavelength wafer-fused vertical-cavity surface-emitting lasers

Optical Injection Locking of Polarization Modes in VCSELs Emitting at 1.3 μm Wavelength

Recent Progress in Wafer-Fused VCSELs Emitting in the 1550-nm Band

14XX nm-wavelength electrically-pumped VECSELs fabricated by wafer fusion

Vertical cavity surface emitting devices incorporating wafer fused reflectors

Optical injection locking of transverse modes in 1.3-mu m wavelength coupled-VCSEL arrays