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Alexandru Mereuta

Cette personne a quitté l’EPFL

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Publications associées (54)

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Fabrication and performance of 1.3-mu m 10-Gb/s CWDM wafer-fused VCSELs grown by MOVPE

Elyahou Kapon, Alexandru Mereuta, Alexei Sirbu, Vladimir Iakovlev, Andrei Caliman, Grigore Suruceanu, Zlatko Mickovic

Recent progress in the fabrication and performance of 1.3-mu m 10-Gb/s, low power consumption wafer-fused VCSELs grown by MOVPE under nitrogen atmosphere are presented and discussed. By optimization of the growth conditions and implementation of a cavity a ...

Elsevier Science Bv2015

InAs/InP quantum dot VECSEL emitting at 1.5 mu m

Elyahou Kapon, Alexandru Mereuta, Andrei Caliman, Grigore Suruceanu

A high-power InAs quantum dot (QD) vertical-external-cavity surface-emitting laser emitting at 1.5 mu m is reported. The active region employs 20 layers of high-density Stranski-Krastanow InAs quantum dots on an InP substrate. The QD density and emission w ...

AMER INST PHYSICS2019

Increasing single mode power of 13-μm VCSELs by output coupling optimization

Elyahou Kapon, Alexandru Mereuta, Alexei Sirbu, Vladimir Iakovlev, Andrei Caliman, Grigore Suruceanu, Zlatko Mickovic

We report on the single mode emission power enhancement of 1.3-mu m VCSELs by adjusting the reflectivity of the top GaAs-based DBR for output coupling optimization using selective removal of Bragg reflector layers. Devices with record single mode power of ...

Optical Society of America2015

High performance wafer-fused semiconductor disk lasers emitting in the 1300 nm waveband

Elyahou Kapon, Alexandru Mereuta, Alexei Sirbu, Vladimir Iakovlev, Andrei Caliman, Nicolas Volet

We report for the first time on the performance of 1300 nm waveband semiconductor disc lasers (SDLs) with wafer fused gain mirrors that implement intracavity diamond and flip-chip heat dissipation schemes based on the same gain material. With a new type of ...

Optical Society of America2014

3 W of 650 nm red emission by frequency doubling of wafer-fused semiconductor disk laser

Elyahou Kapon, Alexandru Mereuta, Alexei Sirbu

3 W at genuine red wavelength of 650 nm has been achieved from a semiconductor disk laser by frequency doubling. An InP based active medium was fused with a GaAs/AlGaAs distributed Bragg reflector resulting in an integrated monolithic gain mirror. 6.6 W of ...

Optical Society of America2010

Polarization mode control of long-wavelength VCSELs by intracavity patterning

Elyahou Kapon, Benjamin Dwir, Alexandru Mereuta, Alexei Sirbu, Vladimir Iakovlev, Andrei Caliman, Zlatko Mickovic, Christopher Michael Long

Polarization mode control is enhanced in wafer-fused verticalcavity surface-emitting lasers emitting at 1310 nm wavelength by etching two symmetrically arranged arcs above the gain structure within the laser cavity. The intracavity patterning introduces bi ...

Optical Soc Amer2016

Mode Coupling Measurement in Dual-Frequency Quantum Well-based VECSEL

Elyahou Kapon, Alexandru Mereuta, Andrei Caliman

We experimentally investigate the Lamb coupling constant C in InGaAlAs Quantum Wells active medium. An Optically-Pumped Vertical-External-Cavity Surface-Emitting Laser emitting at 1.54 mu m is designed to sustain the oscillation of two orthogonally polariz ...

IEEE2019

Recent progress in wafer-fused VECSELs emitting in the 1310 nm waveband

Elyahou Kapon, Alexandru Mereuta, Alexei Sirbu, Vladimir Iakovlev, Andrei Caliman, Nicolas Volet

Over the last years we have continuously improved the performance of 1300 nm band VECSELs with wafer fused gain mirrors in the intra-cavity diamond and the flip-chip heat dissipation configurations. In this work we present recent results for gain mirrors t ...

Spie-Int Soc Optical Engineering2015

>25 Gbps direct modulation and data transmission with 1310 nm waveband wafer fused VCSELs

Elyahou Kapon, Alexandru Mereuta, Alexei Sirbu, Vladimir Iakovlev, Andrei Caliman

25 Gb/s transmission over 10 km of standard single mode fiber is demonstrated for 1300 nm wafer fused InP/GaAs VCSELs with increased strain in quantum wells and higher output coupling from the cavity. ...

Ieee2016

Wafer-fused heterostructures : application to vertical cavity surface-emitting lasers emitting in the 1310 nm band

Elyahou Kapon, Alexandru Mereuta, Alexei Sirbu, Vladimir Iakovlev, Andrei Caliman, Grigore Suruceanu

Currently, wafer-fusion technology represents an effective technique for enhancing the performance of long-wavelength vertical cavity surface-emitting lasers (VCSELs) based on classical double heterostructures with multi-quantum well active regions. Using ...

Institute of Physics2011

Recent progress in wafer-fused VECSELs emitting in the 1310nm and 1550nm bands

Elyahou Kapon, Alexandru Mereuta, Alexei Sirbu, Vladimir Iakovlev, Andrei Caliman, Nicolas Volet, Kamil Pawel Pierscinski

Recent developments of wafer-fused long-wavelength VECSELs resulted in reaching record high CW output power of 6.6 W at 1300 nm and a coherence length longer than 5 km in fiber and 1 Watt of output power in single frequency regime at 1550 nm. First wafer-f ...

SPIE, Vol. 8606, pp. , 20132013

1.38-μm mode-locked Raman fiber laser pumped by semiconductor disk laser

Elyahou Kapon, Alexandru Mereuta, Alexei Sirbu

A mode-locked Raman fiber laser pumped by 1.3 mu m semiconductor disk laser is demonstrated. Direct Watt-level core-pumping of the single-mode fiber Raman lasers and amplifiers with low-noise disk lasers is demonstrated to represent a highly practical solu ...

Optical Society of America2010

156 µm 1 watt single frequency semiconductor disk laser

Elyahou Kapon, Alexandru Mereuta, Alexei Sirbu

A single frequency wafer-fused semiconductor disk laser at 1.56 mu m with 1 watt of output power and a coherence length over 5 km in fiber is demonstrated. The result represents the highest output power reported for a narrow-line semiconductor disk laser o ...

Optical Society of America2013

Numerical Analysis of Mode Discrimination by Intracavity Patterning in Long-Wavelength Wafer-Fused Vertical-Cavity Surface-Emitting Lasers

Elyahou Kapon, Alexandru Mereuta, Alexei Sirbu, Vladimir Iakovlev, Andrei Caliman, Nicolas Volet

This paper presents an extensive numerical analysis of 1.3-mu m wavelength wafer-fused vertical-cavity surface-emitting lasers (VCSELs) incorporating intracavity patterning. Using a 3-D, self-consistent model of the physical phenomena in VCSELs, supported ...

Institute of Electrical and Electronics Engineers2014

3.125Gb/s modulation up to 70°C using 1.3µm VCSELs fabricated with localized wafer fusion for 10GBASE LX4 applications

Elyahou Kapon, Alok Rudra, Alexandru Mereuta, Vladimir Iakovlev, Andrei Caliman, Grigore Suruceanu

2006

Polarization mode structure in long-wavelength wafer-fused vertical-cavity surface-emitting lasers

Elyahou Kapon, Alexandru Mereuta, Alexei Sirbu, Vladimir Iakovlev, Andrei Caliman, Grigore Suruceanu, Nicolas Volet

Applications of long-wavelength (lambda > 1 mu m) vertical-cavity surface-emitting lasers (VCSELs) generally require close control over wavelength and polarization of the emitted light. In most cases, single mode and polarization stable lasing is desired. ...

Spie-Int Soc Optical Engineering, Po Box 10, Bellingham, Wa 98227-0010 Usa2012

Optical Injection Locking of Polarization Modes in VCSELs Emitting at 1.3 μm Wavelength

Elyahou Kapon, Alexandru Mereuta, Alexei Sirbu, Vladimir Iakovlev, Andrei Caliman, Grigore Suruceanu, Elodie Lamothe, Christopher Michael Long

2013

Recent Progress in Wafer-Fused VCSELs Emitting in the 1550-nm Band

Elyahou Kapon, Alexandru Mereuta, Alexei Sirbu, Vladimir Iakovlev, Andrei Caliman, Grigore Suruceanu

Record-high fundamental mode output power of 1.5 mW at 100 degrees C is achieved with InAlGaAs-InP/AlGaAs-GaAs 1550 nm wavelength vertical cavity surface emitting lasers (VCSELs) produced by a modified wafer fusion technique. A broad wavelength setting on ...

Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2011

14XX nm-wavelength electrically-pumped VECSELs fabricated by wafer fusion

Elyahou Kapon, Alexandru Mereuta, Alexei Sirbu, Vladimir Iakovlev, Andrei Caliman, Kamil Pawel Pierscinski

We report on the design, fabrication and characterization of electrically pumped vertical external cavity surface emitting lasers (EP-VECSELs) emitting at 1470 nm. We demonstrate 6.2 mW of CW output power, which represents the highest power value reported ...

Optical Society of America2013

Vertical cavity surface emitting devices incorporating wafer fused reflectors

Alexandru Mereuta, Alexei Sirbu, Andrei Caliman

The invention refers to a method of manufacturing an optoelectronic device and in particular a method of manufacturing a vertical cavity surface emitting device incorporating wafer fused reflectors. ...

Ecole Polytechnique Federale de Lausanne2013