Publications de Alexei Altoukhov

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Nitride-based blue laser diode structures with either Al0.83In0.17N/Al0.07Ga0.93N or Al0.87In0.13N bottom claddings have been fabricated and compared to standard structures including solely Al0.07Ga0.93N bottom claddings. Lasing emission at 415 nm is achie ...

The authors report on the achievement of a vertically oriented three pair airgap/GaN distributed Bragg reflector realized by controlled oxidation and wet-chemical etching of AlInN sacrificial layers. Microreflectivity measurements exhibit high peak reflect ...

The authors report a technique for selective wet chemical etching of an AlInN sacrificial layer lattice-matched to GaN for the fabrication of air-gap photonic structures. It is used to demonstrate high quality factor (Q) microdisk cavities. Whispering gall ...

The authors report on strategies to achieve lasing in electrically driven vertical cavity surface emitting lasers at room temperature, namely the improvement of the quality factor of a microcavity suited for electrical injection, the use of a ZnO contact t ...

Alexei Altoukhov

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Al0.83In0.17N lattice-matched to GaN used as an optical blocking layer in GaN-based edge emitting lasers

High reflectivity airgap distributed Bragg reflectors realized by wet etching of AlInN sacrificial layers

High quality nitride based microdisks obtained via selective wet etching of AlInN sacrificial layers

Towards room temperature electrically pumped blue vertical cavity surface emitting lasers