Publications de Nicolas Moret | EPFL Graph Search

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Quantum wells (QWs), quantum wires (QWRs) and quantum dots (QDs) are semiconductor heterostructures with nanoscopic dimensions. At this length scale, their properties are governed by quantum mechanics. The interest in these nanostructures is motivated by a ...

Negatively and positively charged excitons are identified in the spatially resolved photoluminescence spectra of quantum wires. We demonstrate that charged excitons are weakly localized in disordered quantum wires. As a consequence, the enhancement of the ...

We report on the observation of negatively- and positively-charged excitons in the photoluminescence spectra of V-groove quantum wires. The. charged exciton binding energy increases with the strength of the quantum confinement. We demonstrate that fluctuat ...

We investigate the embedded interfaces of GaAs/AlGaAs quantum wells grown by metal organic vapor phase epitaxy on slightly (< 1 degrees)-misoriented (001) substrates using selective etching and atomic force microscopy. Depending on the substrate misorienta ...

The effect of the miscut angle of vicinal substrate on the optical and morphological properties of GaAs/AlxGa1-xAs quantum wells grown by metalorganic vapor phase epitaxy is studied by means of photoluminescence (PL) and atomic force microscopy. Within small changes of the miscut angle, we observe strong variations of the PL linewidth, energy, and lineshape, as well as transitions between the morphology of the sample's surface and interface. The relation between these features is discussed, and the particul

The diffusivity of photogenerated electron-hole pairs in weakly disordered GaAs/AlGaAs V-groove quantum wires was measured using a photoluminescence (PL) time-of-flight technique. It is shown that the electron-hole pair diffusion is thermally activated above about 50 K. Exciton localization is observed in micro-PL (mu PL) spectra at low temperature. A reduction in the Stokes shift is found to accompany the increase in the diffusion coefficient. Nevertheless, localization-related features in the mu PL spectr

Significant reduction in inhomogeneous broadening of GaAs/AlGaAs V- groove quantum wires (QWRs) is achieved by growing them on vicinal (001) GaAs substrates misaligned by several degrees with respect to the [1 (1) over bar0] groove direction. Low temperatu ...

Nicolas Moret

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Exciton localization and diffusion in low-dimensional nanostructures formed on non-planar substrates

Enhancement of the binding energy of charged excitons in disordered quantum wires

Charged excitons in modulation-doped quantum wires

Correlation between optical properties and interfaces morphology of GaAs/AlGaAs quantum wells

Optics, morphology, and growth kinetics of GaAs/Al_{x}Ga_{1-x}As quantum wells grown on vicinal substrates by metalorganic vapor phase epitaxy

Diffusion of electron-hole pairs in disordered quantum wires

Sub-meV Photoluminescence Linewidth and >106 cm2/Vs Electron Mobility in AlGaAs/GaAs Quantum Wells Grown by Metallorganic Vapor Phase Epitaxy on Slightly Misoriented Substrates

Narrow inhomogeneous broadening of V-groove quantum wires grown on vicinal substrates

Properties of GaAs/AlGaAs Quantum Wells Grown by OMVPE using Vicinal GaAs Substrates