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Dielectric breakdown of (Pb,La)(Zr,Ti)O-3(PLZT) film capacitors with Pt and SrRuO3 electrodes, in its initial or virgin state and after voltage cycling that causes polarization fatigue, is studied by constant-current measurements. It is shown that for different types of PLZT capacitors, the breakdown onset is controlled by the critical charge flown through the film (charge to breakdown) rather than the voltage applied to the capacitor. The charge to breakdown for the asymmetrical Pt/SrRuO3/PLZT/Pt capacitor

This paper addresses the problem of time-dependent dielectric breakdown of Pb(Zr,Ti)O-3 (PZT) thin films. It is shown by using constant-current breakdown measurements, that for PZT film capacitors with Pt and SrRuO3 (SRO) electrodes the breakdown onset is controlled by charge to breakdown (Q(BR)) rather than the voltage applied to the capacitor. The QBR value for the asymmetrical Pt/SrRuO3/PZT/Pt capacitors is found to be much higher that for the Pt/PZT/Pt system. Polarization fatigue caused by bipolar volt

Fabrication of high-density ferroelectric memories requires the growth of the ferroelectric material on the drain contact metal. In standard 0.5 mum technology, tungsten plugs are applied to connect the drain contacts to the first metallization level. In this work, we investigated electrode systems to be applied between sputter deposited, ferroelectric PbZr0.35Ti0.65O3 (PZT) and tungsten. Besides the obvious barrier function of such an electrode system, the texture of the PZT is of interest as well. The rou

Scanning capacitance microscopy and electrostatic force microscopy have been used to characterize commercial semiconductor devices at various stages of the fabrication process. These methods, combined with conventional atomic force microscopy, allow to visualize qualitatively the oxide thickness, the nature of dopants and the exact position of implanted areas. (C) 2002 Elsevier Science Ltd. All rights reserved.

This paper presents a process for the co-fabrication of self-aligned NMOS and single electron transistors made by gated polysilicon wires. The realization of SET–MOS hybrid architectures is also reported. The proposed process exploits an original low energ ...

Pierre Fazan

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Dielectric breakdown in (Pb,La)(Zr,Ti)O-3 ferroelectric thin films with Pt and oxide electrodes

Constant-current study of dielectric breakdown of Pb(Zr,Ti)O-3 ferroelectric film capacitors

Tungsten based electrodes for stacked capacitor ferroelectric memories

Use of scanning capacitance microscopy for controlling wafer processing

A hybrid CMOS-SET co-fabrication platform using nano-grain polysilicon wires

Novel Technique for Nanograin Ultra-Thin Polysilicon Film Deposition and Implantation

Modeling the polarization in ferroelectric materials: A novel analytical approach

LPCVD deposition of nanograin polysilicon ultra-thin films