Publications de Helge Weman | EPFL Graph Search

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We investigate the properties of electronic states and optical transitions in hexagonal GaAs quantum dots within Al0.3Ga0.7As nanowires, grown in axial direction [111]. Such dots are particularly interesting due to their high degree of symmetry. A streamli ...

The electronic states in the conduction and valence bands of quantum wires are studied by means of the effective mass hamiltonian and the Luttinger hamiltonian. The band mixing effects due to the wire geometry are fully taken into account by an accurate finite element solution of the resulting Schrodinger equations. The quantum wire profiles measured by transmission electron microscopy are used. The comparison of theoretical results with photoluminescence excitation spectra of various nanostructures yields

We report on carrier-induced effects on emission and absorption in forward biased GaAs/AlGaAs V-groove quantum wire (QWR) diodes observed using low-temperature (10 K) photoluminescence (PL), electroluminescence (EL) and PL excitation (PLE) spectroscopy. In the case of simultaneous electron-hole injection we observe a band-gap renormalization (BGR) of at least 5 meV for a carrier density of approximate to 10(6) cm(-1), by comparing high-density EL spectra with low-density PLE spectra. In the case of electron

We show that the two-dimensional quantum confined Stark effect in a semiconductor quantum wire can display novel behaviour, i.e. wave function splitting and cascading. No analog to these phenomena can be found in bulk material or quantum wells. The consequences of these effects on Stark shifts, oscillator strengths and electroabsorption spectra are explored numerically using k.p theory. A non-trivial prediction of our model is that, for the case of hole wave function splitting, the cascading of the ladder o

We have studied systems of asymmetric coupled GaAs V-groove quantum wires p-i-n diodes, in which the electrons and holes are injected into different wires. Despite the use of a 7 nm thick AlGaAs tunnel barrier, and although we demonstrate that holes tunnel more slowly than electrons, we observe a very efficient and fast tunneling between the quantum wires (QWR's). We attribute this to the achievement of a resonance between hole levels in the two QWR's. Photoluminescence excitation experiments are compared w

We report on efficient, narrow linewidth exciton recombination in GaAs/AlGaAs V-groove quantum wire light-emitting diodes at room temperature. The high efficiency is due to a selective carrier injection mechanism resulting in an estimated internal quantum efficiency of similar to 20% with an electroluminescence (EL) linewidth as narrow as 15 meV. The thermal broadening contribution to the linewidth is 6 meV due to exciton scattering with optical phonons. An analysis of the EL peak shift in a magnetic field

We have studied systems of asymmetric coupled GaAs V-groove quantum wires, in which the electrons and holes are injected into different wires. Our experimental results indicate efficient electron and hole tunneling, despite a 7 nm thick AlGaAs tunnel barrier. Temperature dependent electroluminescence exhibit clear effects of tunneling up to room temperature but cannot distinguish electron/hole tunneling from exciton tunneling.

A fractional-dimensional approach is applied to a realistic V-groove quantum wire in order to calculate the excitonic absorption spectrum. An excellent agreement is obtained with much more computationally demanding models as well as with experimental photoluminescence excitation data. However, comparison with a full excitonic calculation reveals situations were the concept of fractional dimensions to some extent fails.

Evidence of tunneling and electronic coupling in a one-dimensional system is reported. This is accomplished by comparing low-temperature photoluminescence and photoluminescence excitation spectra of GaAs double quantum wires of different barrier widths with a full 4 x 4 k . p calculation of coupled interband transitions. [S0163-1829(98)01228-4].

We report on the electric field effects in photoluminescence (PL) and PL excitation (PLE) measurements of reverse-biased GaAs V-groove quantum wires. We observe large redshifts (9 meV at 265 kV/cm) of PL and PLE peaks as well as field dependent intensity and polarization anisotropy variations, which are analyzed by a two-dimensional quantum confined Stark effect model. (C) 1999 American Institute of Physics. [S0003-6951(99)00416-7].

Exciton transfer between two parallel GaAs V-groove quantum wires (QWRs) or two planar quantum wells (QWs) separated by AlGaAs barriers ranging from 5.5 nm to 20 nm thickness is studied by photoluminescence (PL) and PL excitation (PLE) spectroscopy. It is found that the transfer is strongly reduced between the widely spaced QWRs as compared with QWs. We have also investigated the optical absorption in single QWRs embedded in an AlGaAs V-shaped channel waveguide. Using a combination of PLE and absorption mea

Helge Weman

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Symmetries and optical transitions of hexagonal quantum dots in GaAs/AlGaAs nanowires

Band-mixing and coupling in single and double quantum wire structures

Carrier-induced effects on absorption and emission in V-groove quantum wire diodes

Quantum confined Stark effect in quantum wires: Wave function splitting and cascading

Electroluminescence and photoluminescence excitation study of asymmetric coupled GaAs/AlxGa1-xAs V-groove quantum wires

Efficient, narrow linewidth excitonic emission at room temperature from GaAs/AlGaAs V-groove quantum wire light-emitting diodes

Electrolummescence of asymmetric coupled GaAs/AlGaAs V-groove quantum wires

Fractional-dimensional excitonic absorption theory applied to V-groove quantum wires

Tunneling and coupling between one-dimensional states in double quantum wires

Two-dimensional quantum-confined Stark effect in V-groove quantum wires: Excited state spectroscopy and theory

Semiconductor quantum-wires and nano-wires for optoelectronic applications

Strongly reduced exciton transfer between quantum wires

Influence of long-range substrate roughness in V-groove quantum wire structures

Polarization-Resolved Optical Absorption in Single V-groove Quantum Wires

Optical emission from a V-groove quantum wire laser diode immersed in high magnetic fields

Structure and Optical Properties of V-Groove Quantum Wire Superlattices

Selective Carrier Injection into V-Groove Quantum Wires

High internal quantum efficiency, narrow linewidth InGaAs/GaAs/AlGaAs quantum wire light-emitting diodes