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We report the results of a comprehensive study of the critical dynamics of the classical perovskite antiferroelectric PbZrO3. The combination of inelastic x-ray and diffuse x-ray scattering techniques and Brillouin light scattering was used. It is found th ...

While commonly used piezoelectric materials contain lead, non-hazardous, high-performance piezoelectrics are yet to be discovered. Charged domain walls in ferroelectrics are considered inactive with regards to the piezoelectric response and, therefore, are ...

Use of ferroelectric domain-walls in future electronics requires that they are stable, rewritable conducting channels. Here we demonstrate nontherrnally activated metallic-like conduction in nominally uncharged, bent, rewritable ferroelectric-ferroelastic ...

Pb(Mg1/3Nb2/3)O-3 (PMN) alkoxide precursor solutions were synthesized and used to prepare thin films by spin coating on TiO2/Pt/TiO2/SiO2/Si substrates. Many parameters like the use of homogeneous and stable precursor solutions and appropriate processing were used to greatly reduce the presence of the nonferroelectric pyrochlore phase. Transmission electron microscopy investigations, dielectric, electrostrictive, and direct current field induced piezoelectric measurements were carried out and have shown tha

Controlled propagation speed of individual magnetic domains in metal channels at the room temperature is obtained via the non-volatile field effect associated with the switchable polarization of P(VDF-TrFE) (polyvinylidene fluoride-trifluoroethylene) ferro ...

The stability of Ising 180-degree domain walls with respect to appearance of chirality is analytically studied in tetragonal perovskite-type ferroelectrics taking into account electro-mechanical coupling. It is shown that the widely used approximation negl ...

Unique properties of domain walls in ferroelectrics have been recently discovered but methods of their controlled engineering remain underdeveloped. Here we investigate the domain structure of Bi0.9La0.1FeO3 epitaxial thin films with piezoelectric force mi ...

The interaction between domain walls and pinning centers in ferroelectrics is of great interest from both fundamental and practical points of view. In this work, we show that, counter to intuition, the apparent velocity of domain walls can increase as the ...

We investigate the atomistic structure of ferroelastic-ferroelectric 90 degrees domain walls in PbTiO3 with first-principles calculations and high-resolution scanning transmission electron microscopy. We find sharp discontinuities in the variation of latti ...

Charged domain walls in ferroelectrics are movable and electronically conducting interfaces inside insulating materials. A simple and reliable method for their artificial production with ultraviolet (UV) light is described. The UV illumination produces fre ...

Ferroelectric copolymers of polyvinylidene fluoride and trifluoroethylene are attractive gate materials because of a rather high remanent polarization, low dielectric permittivity, and easy integration on semiconductors due to the low processing temperatur ...

Nava Setter

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Lattice dynamics and antiferroelectricity in PbZrO3 tested by x-ray and Brillouin light scattering

Enhanced electromechanical response of ferroelectrics due to charged domain walls

Bent Ferroelectric Domain Walls as Reconfigurable Metallic-Like Channels

Relation between processing, microstructure and electric field-dependent dielectric properties of Ba0.3Sr0.7TiO3 thin films on alumina substrates

Ferroelectric materials for microwave tunable applications (vol 11, pg 5, 2003)

Relaxor behavior and electromechanical properties of Pb(Mg1/3Nb2/3)O-3 thin films

Erratum: Ferroelectricity in asymmetric metal-ferroelectric-metal heterostructures: A combined first-principles-phenomenological approach (vol 98, art no 207601, 2007)

Tuning of direct current bias-induced resonances in micromachined Ba[sub 0.3]Sr[sub 0.7]TiO[sub 3] thin-film capacitors

Non-volatile polarization switch of magnetic domain wall velocity

Processing and dielectric characterization of Ba0.3Sr0.7TiO3 thin films on alumina substrates

Nonvolatile gate effect in a ferroelectric-semiconductor quantum well

DC bias-dependent shift of the resonance frequencies in BST thin film membranes

Epitaxial growth of (SrBa)Nb2O6 thin films on SrTiO3 single crystal substrate

Electrical tuning of dc bias induced acoustic resonances in paraelectric thin films (vol 104, 094102, 2008)

Impact of Strain Effects on the Stability of Ising Walls in Ferroelectrics

Thickness Dependence of Domain-Wall Patterns in BiFeO3 Thin Films

Dynamics of ferroelectric 180 degrees domain walls at engineered pinning centers

Asymmetric structure of 90 deg. domain walls and interactions with defects in PbTiO3

Free-Carrier-Compensated Charged Domain Walls Produced with Super-Bandgap Illumination in Insulating Ferroelectrics

Polarization Screening in Multiferroic (Ga,Mn)As/P(VDF-TrFE) Transistors