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François Krummenacher

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Publications associées (55)

A circuit-level substrate current model for smart-power ICs

Maher Kayal, François Krummenacher, Jean-Michel Sallese, Marc Pastre, Fabrizio Lo Conte

This paper presents a new modeling methodology accounting for generation and propagation of minority carriers that can be used directly in circuit-level simulators in order to estimate coupled parasitic currents. The model is based on a new compact model o ...

IEEE Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2009

Global 2D modeling of minority and majority substrate coupled currents

Maher Kayal, François Krummenacher, Jean-Michel Sallese, Marc Pastre, Fabrizio Lo Conte

This paper presents a modeling strategy to simulate 2D propagation of electrical perturbations induced by direct biasing of substrate junctions. Identifying parasitic substrate devices such as bipolar transistors reaches rapidly its limit when multiple cur ...

2009

A fully integrated solar battery charger

Maher Kayal, François Krummenacher, Marc Pastre

This paper presents a solar charger ASIC for Nickelbased (NiCd or NiMH) batteries. The system is fully integrated and no external component is needed. The ASIC includes a voltage reference, a low-impedance switch, an oscillator, a poweron reset, and a digi ...

Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2009

Explicit compact model for symmetric double-gate MOSFETs including solutions for small-geometry effects

François Krummenacher, Christophe Lallement, Jean-Michel Sallese

A physics-based compact model including short-channel effects (SCEs) is presented for undoped (or lightly doped) symmetric double-gate (DG) MOSFETs. Our approach allows an accurate description of the device behavior down to 60 nm with a simple set of equat ...

2008

Substrate current modeling for high-voltage smart power BCD technology

Maher Kayal, François Krummenacher, Marc Pastre, Fabrizio Lo Conte

This paper presents a compact- and a macro-model for estimating and simulating the perturbations induced in the substrate by high-voltage transistors switching inductive loads. On one hand, it allows the designer to predict the amount of switching noise ge ...

2008

A Compact DC and AC Model for Circuit Simulation of High Voltage VDMOS Transistor

Michel Declercq, François Krummenacher, Mihai Adrian Ionescu, Costin Anghel, Yogesh Singh Chauhan

2006

A Highly Scalable High Voltage MOSFET Model

Michel Declercq, François Krummenacher, Mihai Adrian Ionescu, Costin Anghel, Yogesh Singh Chauhan

2006

Scalable general high voltage MOSFET model including quasi-saturation and self-heating effects

François Krummenacher, Costin Anghel, Yogesh Singh Chauhan, Ashish Sharma

2006

Analysis and Modeling of Lateral Non-Uniform Doping in High-Voltage MOSFETs

Michel Declercq, François Krummenacher, Mihai Adrian Ionescu, Costin Anghel, Yogesh Singh Chauhan

2006

A new charge-based Compact Model for Lateral Asymmetric MOSFET

Michel Declercq, François Krummenacher, Mihai Adrian Ionescu, Costin Anghel, Yogesh Singh Chauhan

2006

A New Charge based EKV Compact Model for Lateral Asymmetric MOSFET

Michel Declercq, François Krummenacher, Mihai Adrian Ionescu, Costin Anghel, Yogesh Singh Chauhan

2006

A model for mu;-power rectifier analysis and design

Jari-Pascal Curty, Michel Declercq, François Krummenacher, Catherine Dehollain

This paper proposes a linear two-port model for an N-stage modified-Greinacher full-wave rectifier. It predicts the overall conversion efficiency at Iow power levels where the diodes are operating near their threshold voltage. The output electrical behavio ...

2005

A Design Oriented Charge-based Current Model for Symmetric DG MOSFET and its Correlation with the EKV Formalism

Christian Enz, François Krummenacher, Jean-Michel Sallese, Ananda Sankar Roy

We propose a design oriented charge-based model for undoped DG MOSFETs under symmetrical operation that aims at giving a comprehensive understanding of the device from the design strategy. In particular, we introduce useful normalizations for current and c ...

2005

A Basic Property of MOS Transistors and its Circuit Implications

Christian Enz, François Krummenacher, Eric Vittoz

2005

Optimisation des filtres à capacités commutées à très faible consommation

François Krummenacher

EPFL1985

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