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Jean-Daniel Ganière

Cette personne a quitté l’EPFL

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Publications associées (29)

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Exciton recombination dynamics in a-plane (Al,Ga)N/GaN quantum wells probed by picosecond photo and cathodoluminescence

Nicolas Grandjean, Benoît Marie Joseph Deveaud, Jean-Daniel Ganière, Denis Martin, Laurent Balet, Pierre Michel Corfdir, Samuel Sonderegger

We present a combined low-temperature time-resolved cathodoluminescence and photoluminescence study of exciton recombination mechanisms in a 3.8 nm thick a-plane (Al,Ga)N/GaN quantum well (QW). We observe the luminescence from QW excitons and from excitons ...

American Institute of Physics2010

Intrinsic dynamics of weakly and strongly confined excitons in nonpolar nitride-based heterostructures

Nicolas Grandjean, Benoît Marie Joseph Deveaud, Jean-Daniel Ganière, Jacques Levrat, Pierre Michel Corfdir

Both weakly and strongly confined excitons are studied by time-resolved photoluminescence in a nonpolar nitride-based heterostructure grown by molecular beam epitaxy on the a-facet of a bulk GaN crystal, with an ultralow dislocation density of 2 × 105 cm-2 ...

2011

Engineering the spatial confinement of exciton polaritons in semiconductors

Benoît Marie Joseph Deveaud, Vincenzo Savona, Jean-Daniel Ganière, François Morier-Genoud, Ounsi El Daïf, Taofiq Paraïso, Pierre Bernard Henri Lugan, Reda Idrissi Kaitouni

We demonstrate three-dimensional spatial confinement of exciton-polaritons in a semiconductor microcavity. Polaritons are confined within a micron-sized region of slightly larger cavity thickness, called mesa, through lateral trapping of their photon compo ...

2006

One-dimensional exciton luminescence induced by extended defects in nonpolar GaN/(Al,Ga)N quantum wells

Nicolas Grandjean, Pierre Stadelmann, Raphaël Butté, Benoît Marie Joseph Deveaud, Jean-Daniel Ganière, Jacques Levrat, Denis Martin, Pierre Michel Corfdir

In this study, we present the optical properties of nonpolar GaN/(Al,Ga)N single quantum wells (QWs) grown on either a- or m-plane GaN templates for Al contents set below 15%. In order to reduce the density of extended defects, the templates have been proc ...

Institute of Physics2011

Exciton Drift in Semiconductors under Uniform Strain Gradients: Application to Bent ZnO Microwires

Benoît Marie Joseph Deveaud, Jean-Daniel Ganière, Gwénolé Jean Jacopin, Mehran Shahmohammadi

Optimizing the electronic structures and carrier dynamics in semiconductors at atomic scale is an essential issue for innovative device applications. Besides the traditional chemical doping and the use of homo/heterostructures, elastic strain has been prop ...

American Chemical Society2014

Exciton hopping probed by picosecond time-resolved cathodoluminescence

Benoît Marie Joseph Deveaud, Jean-Daniel Ganière, Gwénolé Jean Jacopin, Mehran Shahmohammadi

The exciton transport is studied in high quality ZnO microwires using time resolved cathodoluminescence. Owing to the available picosecond temporal and nanometer spatial resolution, a direct estimation of the exciton average speed has been measured. When r ...

American Institute of Physics2015

Excitonic Diffusion in InGaN/GaN Core–Shell Nanowires

Jean-Daniel Ganière, Gwénolé Jean Jacopin, Hua Zhang, Mehran Shahmohammadi

We report on the direct observation of the diffusion of carriers in graded InGaN/GaN quantum wells in a nanowire. By probing the local dynamics at the nanoscale, along the wire for different temperatures between 4 and 250 K, we conclude that this diffusion ...

American Chemical Society (ACS)2016

Electron localization by a donor in the vicinity of a basal stacking fault in GaN

Benoît Marie Joseph Deveaud, Jean-Daniel Ganière, Pierre Michel Corfdir

We study the effects of the vicinity between a shallow donor nucleus and an I1-type basal stacking fault (BSF) in GaN. We propose a numerical calculation, in the “effective potential” formalism, of energies and envelope functions of electrons submitted to ...

2009

Temperature Dependent Exciton Funnel Dynamics in Uniform Strain Gradient Field Observed by Time-Resolved Photoluminescence

Benoît Marie Joseph Deveaud, Jean-Daniel Ganière, Gwénolé Jean Jacopin, Mehran Shahmohammadi

Elastic strain engineering is an important way to reversibly tune the properties of micro/nanoscale semiconductors for promising applications in the emerging advanced nanotechnologies, such as the strain enhanced high-mobility transistors, nanogenerators, ...

WILEY-V C H VERLAG GMBH2021

Time-resolved spectroscopy on GaN nanocolumns grown by plasma assisted molecular beam epitaxy on Si substrates

Benoît Marie Joseph Deveaud, Jean-Daniel Ganière, Pierre Michel Corfdir

A detailed study of excitons in unstrained GaN nanocolumns grown by plasma assisted molecular beam epitaxy on silicon substrates is presented. The time-integrated and time-resolved photoluminescence spectra do not depend significantly on the (111) or (001) ...

American Institute of Physics2009

Biexciton emission and crystalline quality of ZnO nano-objects

Jean-Philippe Ansermet, Pierre Stadelmann, Benoît Marie Joseph Deveaud, Jean-Daniel Ganière, Pierre Michel Corfdir, Anas Mouti, Elisa Papa

The design of cost-effective standards for the quality of nano-objects is currently a key issue toward their massive use for optoelectronic applications. The observation by photoluminescence of narrow excitonic and biexcitonic emission lines in semiconduct ...

Institute of Physics2011

Temperature-Dependence of Exciton Radiative Recombination in (Al,Ga)N/GaN Quantum Wells Grown on a-Plane GaN Substrates

Nicolas Grandjean, Benoît Marie Joseph Deveaud, Jean-Daniel Ganière, Pierre Michel Corfdir, Mehran Shahmohammadi, Etienne François Olivier Giraud

This article presents the dynamics of excitons in a-plane (Al,Ga)N/GaN single quantum wells of various thicknesses grown on bulk GaN substrates. For all quantum well samples, recombination is observed to be predominantly radiative in the low-temperature ra ...

Japan Society of Applied Physics2013

Growth mode induced carrier localization in InGaN/GaN quantum wells

Nicolas Grandjean, Benoît Marie Joseph Deveaud, Jean-François Carlin, Jean-Daniel Ganière, Eric Feltin, Raphaël Butté

The growth of InGaN quantum wells ( QWs) by metal-organic vapour phase epitaxy is investigated by atomic force microscopy ( AFM). It is shown that for low growth temperatures the surface morphology of the thin InGaN well layer ( 1.5 nm) exhibits a meanderi ...

2007

Quantitative Cathodoluminescence Opens New Areas of Investigation in Semiconductor Research and Production

Jean-Daniel Ganière, Pierre Michel Corfdir

Cambridge, Cambridge University Press2013

Exciton localization on basal stacking faults in a-plane epitaxial lateral overgrown GaN grown by hydride vapor phase epitaxy

Nicolas Grandjean, Benoît Marie Joseph Deveaud, Jean-Daniel Ganière, Denis Martin, Jacques Levrat, Pierre Michel Corfdir

We present a detailed study of the luminescence at 3.42 eV usually observed in a-plane epitaxial lateral overgrowth (ELO) GaN grown by hydride vapor phase epitaxy on r-plane sapphire. This band is related to radiative recombination of excitons in a commonl ...

American Institute of Physics2009

Low-temperature time-resolved cathodoluminescence study of exciton dynamics involving basal stacking faults in a-plane GaN

Nicolas Grandjean, Benoît Marie Joseph Deveaud, Jean-Daniel Ganière, Denis Martin, Pierre Michel Corfdir

Time-resolved cathodoluminescence at 27 K has been performed on a-plane GaN grown by epitaxial lateral overgrowth. We detail the relaxation and recombination mechanisms of excitons [free or bound to neutral donors, or bound to I1-type basal stacking faults ...

AIP American Institute of Physics2009

Picosecond Time-Resolved Cathodoluminescence to Probe Exciton Dynamics in α-Plane (Al,Ga)N/GaN Quantum Wells

Nicolas Grandjean, Benoît Marie Joseph Deveaud, Jean-Daniel Ganière, Laurent Balet, Pierre Michel Corfdir, Samuel Sonderegger

Cambridge, Cambridge University Press2011

Nanoindentation cracking in gallium arsenide: Part II. TEM investigation

Johann Michler, Jacques Giovanola, Jean-Daniel Ganière, Jean-Marc Breguet, Cédric Pouvreau

The nanoindentation fracture behavior of gallium arsenide (GaAs) is examined from two perspectives in two parent papers. In the first paper (part I), we address the morphology of the crack field induced by different types of indenters by means of in situ n ...

Cambridge University Press2013

Time-resolved spectroscopic measurement apparatus

Jean-Daniel Ganière

Light dispersing device comprising a slit element having a slit for exposure to electromagnetic radiation, wherein the slit element is configured and disposed for turning the slit between at least two positions. The light dispersing device is used together ...

2006

High spatial resolution picosecond cathodoluminescence of InGaN quantum wells

Nicolas Grandjean, Benoît Marie Joseph Deveaud, Jean-François Carlin, Jean-Daniel Ganière, Eric Feltin, Andrea Crottini

The authors have studied InxGa1-xN/GaN (x approximate to 15%) quantum wells (QWs) using atomic force microscopy (AFM) and picosecond time resolved cathodoluminescence (pTRCL) measurements. They observed a contrast inversion between monochromatic CL maps co ...

American Institute of Physics2006