Publications de Matthias Bucher

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This paper presents a novel physics-based analytical compact model for the drift region of a high-voltage metal-oxide-semiconductor field-effect transistor (HV-MOSFET). According to this model, the drift region is considered as a simple 1-D problem, just a ...

We performed a wide-angle X-ray scattering experiment of single Xe nanoparticles using an X-ray free electron laser. We developed a novel analysis method that focuses on the angular correlation between plural Bragg spots in single-shot diffraction patterns ...

Variability of Low Frequency Noise (LFN) and Random Telegraph Noise (RTN) is an important concern for many analog CMOS integrated circuits. In this paper, transistors with enclosed gate layout are examined and compared with standard layout transistors, wit ...

The free expansion of a planar plasma surface is a fundamental non-equilibrium process relevant for various fields but as-yet experimentally still difficult to capture. The significance of the associated spatiotemporal plasma motion ranges from astrophysic ...

In this brief, extraction methods are proposed for determining the essential parameters of double gate junction field-effect transistors (FETs). First, a novel method for determining free carrier effective mobility, similar to a recently proposed method fo ...

The High-Voltage MOSFET is used in a wide variety of applications covering from power systems up to RF-IC. Compact models that describe the high-frequency behavior of the device are required to predict high-frequency operation and switching capabilities of ...

Matthias Bucher

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A Physics-Based Analytical Compact Model for the Drift Region of the HV-MOSFET

Characterizing crystalline defects in single Xe nanoparticles from angular correlations of single-shot diffracted X-rays

Variability of Low Frequency Noise and mismatch in enclosed-gate and standard nMOSFETs

Few-femtosecond resolved imaging of laser-driven nanoplasma expansion

Free Carrier Mobility, Series Resistance, and Threshold Voltage Extraction in Junction FETs

Variability of Low Frequency Noise and mismatch in CORNER DOPED and standard CMOS technology

RF Compact Modeling of High-voltage MOSFETs

Analytical MOS transistor modelling for analog circuit simulation