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Triméthylgallium

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Publications associées (26)

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Decomposition, diffusion, and growth rate anisotropies in self-limited profiles during metalorganic vapor-phase epitaxy of seeded nanostructures

Elyahou Kapon, Alok Rudra, Klaus Leifer

We present a model for the interplay between the fundamental phenomena responsible for the formation of nanostructures by metalorganic vapor phase epitaxy on patterned (001)/(111)B GaAs substrates. Experiments have demonstrated that V-groove quantum wires ...

2011

Physical Properties of Al1-xInxN/(AIN)/GaN (0.07

AlInN is a material which is known to be difficult to be grown among the III-nitride ternary compounds. It attracted much attention only recently and starts to be studied intensively mainly for electronic applications. The aim of this work is manifold. Var ...

EPFL2011

Observation of dodecagon-shape V-defects in GaN/AlInN multiple quantum wells

Nicolas Grandjean, Jean-François Carlin, Eric Feltin, Anas Mouti

The microstructure of GaN(Si)/AlInN multiple quantum wells grown on GaN/Al2O3 (0001) templates by metalorganic vapor-phase epitaxy has been investigated using transmission electron microscopy and associated techniques. Dodecagon-shape V-defects with hexago ...

AIP American Institute of Physics2010

Exciton localization and diffusion in low-dimensional nanostructures formed on non-planar substrates

Nicolas Moret

Quantum wells (QWs), quantum wires (QWRs) and quantum dots (QDs) are semiconductor heterostructures with nanoscopic dimensions. At this length scale, their properties are governed by quantum mechanics. The interest in these nanostructures is motivated by a ...

EPFL2008

Physics and applications of intersubband transitions in nitride based heterostructures

Sylvain Nicolay

In the past decades, III-nitride semiconductor compounds have attracted an increasing amount of interest due to their applications to blue-violet laser diodes and white light emitting diodes, or for their use as ultraviolet emitting devices for biomedical ...

EPFL2008

Mechanisms of Quantum Dot Energy Engineering by Metalorganic Vapor Phase Epitaxy on Patterned Nonplanar Substrates

Elyahou Kapon, Benjamin Dwir, Paolo De Los Rios, Klaus Leifer, Qing Zhu

A novel technique for tuning the strength of quantum confinement in site-controlled semiconductor quantum dots (QDs) is introduced and investigated theoretically and experimentally. The method makes use of controlled local growth rates during metalorganic ...

American Chemical Society2007