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Publications associées (32)

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Charge sensing properties ofmonolithic CMOS pixel sensors fabricated in a 65 nm technology

Francesco Piro

In this work the initial performance studies of the first small monolithic pixel sensors dedicated to charged particle detection, called CE-65, fabricated in the 65nm TowerJazz Panasonic Semiconductor Company are presented. The tested prototypes comprise m ...

ELSEVIER2022

Modeling the electrical characteristic of InGaN/GaN blue-violet LED structure under electrical stress

Nicolas Grandjean, Jean-François Carlin, Camille Haller

The role of deep defects and their physical origin in InGaN/GaN LED are still widely investigated and debated, in particular their impact on the electrical and optical characteristics and on the reliability of the device. In this paper we evaluate the elec ...

PERGAMON-ELSEVIER SCIENCE LTD2022

LiNiO Junction Gate for High-performance Enhancement-mode GaN Power Transistor

Taifang Wang

GaN metal-oxide-semiconductor high electron mobility transistors (MOS)HEMTs) offer outstanding properties for next-generation power electronics devices. The high conductivity, high voltage blocking capability, high operation frequency, and device-level int ...

EPFL2022

Generation of Optical Frequency Combs in an Optical Microresonator Pumped by a 780-nm Laser Diode in Self-Injection Locking Regime

Andrey Voloshin

Experimental data for the generation of optical frequency combs in magnesium fluoride microcavities with whispering gallery modes at 780 nm are presented. This wavelength corresponds to the normal group velocity dispersion for pumping by a laser diode oper ...

2022

Low-noise high-dynamic-range single-photon avalanche diodes with integrated PQAR circuit in a standard 55 nm BCD

Edoardo Charbon, Claudio Bruschini, Francesco Gramuglia, Myung Jae Lee, Ekin Kizilkan, Pouyan Keshavarzian

Single-photon avalanche diode (SPAD) based sensors and systems enable a variety of applications in biomedical, automotive, consumer, and security domains. While several established standard technologies, which can facilitate the design of SPAD-based system ...

SPIE-INT SOC OPTICAL ENGINEERING2022

Sub-10 ps Minimum Ionizing Particle Detection With Geiger-Mode APDs

Edoardo Charbon, Claudio Bruschini, Francesco Gramuglia, Emanuele Ripiccini, Ming-Lo Wu

Major advances in silicon pixel detectors, with outstanding timing performance, have recently attracted significant attention in the community. In this work we present and discuss the use of state-of-the-art Geiger-mode APDs, also known as single-photon av ...

FRONTIERS MEDIA SA2022

Hard and Soft Switching Losses in Power Converters: Role of Transistor Output Capacitance

Palliyage Srilak Nirmana Perera

To best utilize power converters, a sound understanding of the relationship between the circuit topology and the power-semiconductor-device characteristics is required. This is especially important in high-frequency switching, where device parasitics start ...

EPFL2022

Electric metal contacts to monolayer blue phosphorus: electronic and chemical properties

Xiao Zhou

The contact nature when monolayer blue phosphorus (blueP) interfaces with three transition metal electrodes (i. e., Pd, Ir, and Pt) was unraveled by the ab initio density functional theory calculations. Specifically, n-type Schottky contact is observed for ...

ELSEVIER2022

Defects in III-N LEDs: experimental identification and impact on electro-optical characteristics

Nicolas Grandjean, Jean-François Carlin, Camille Haller

III-N light-emitting-diodes (LEDs) are subject of intense investigations, thanks to their high efficiency and great reliability. The quality of the semiconductor material has a significant impact on the electro-optical performance of LEDs: for this reason, ...

SPIE-INT SOC OPTICAL ENGINEERING2022

Upgraded CMS Fast Beam Condition Monitor for LHC Run 3 Online Luminosity and Beam Induced Background Measurements

The fast Beam Condition Monitor (BCM1F) for the CMS experiment at the LHC was upgraded for precision luminosity measurement in the demanding conditions foreseen for LHC Run3. BCM1F has been rebuilt with new silicon diodes, produced on the CMS Phase 2 Outer ...

2022

High-Performance CMOS SPAD-Based Sensors for Time-of-Flight PET Applications

Francesco Gramuglia

Detecting light, photon by photon, has been possible since the 1930s, with the invention of the photomultiplier tube (PMT). However, it is only since the 1970s, that solid-state single-photon detectors have emerged and only since 2003 that a new technology ...

EPFL2022

Light Harvesting Schemes for High Efficiency Thin Film Silicon Solar Cells

Christophe Ballif, Matthieu Despeisse, Mathieu Gérard Boccard, Grégory Bugnon, Corsin Battaglia, Sylvain Nicolay, Michael Elias Stückelberger, Jordi Escarre Palou, Laura Ding, Peter Cuony, Gaetano Parascandolo

In Thin Film Silicon (TF-Si) solar cells light harvesting schemes must guarantee an efficient light trapping in the thin absorber layers without decreasing the silicon layers quality and consecutively the p-i-n diodes electrical performance. TF-Si solar ce ...

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