Mediaspace scheduled maintenance: Aug 25, 2026 07:00 - 12:00 AM. During this time, videos will be temporarily unavailable. Check status updates.

Concept

Self-aligned gate

Publications associées (30)

A hybrid III-V tunnel FET and MOSFET technology platform integrated on silicon

Mihai Adrian Ionescu, Kirsten Emilie Moselund, Clarissa Convertino

InGaAs/GaAsSb tunnelling field-effect transistors and InGaAs metal-oxide-semiconductor field-effect transistors can be integrated on the same silicon substrate using conventional CMOS-compatible processes, creating a platform for potential use in low-power ...

NATURE RESEARCH2021

Low-Latency High-Bandwidth Circuit and System Design for Trigger Systems in High Energy Physics

Marcos Vinícius Silva Oliveira

The increasing luminosity in HEP (High Energy Physics) colliders demands trigger systems to be more selective. First, more information from the detector is routed to the trigger system. Second, larger parts of this information are processed together. These ...

EPFL2021

Optimized electrochemical breakdown etching using temporal voltage variation for formation of nanopores in a silicon membrane

Miao Zhang

Dielectric breakdown etching is a well-known method of making nanopores on thin (similar to 50 nm) dielectric membranes. However, voltage driven translocation of biomolecules through such nanopores becomes extremely fast. For improved detection, for instan ...

ELSEVIER SCIENCE SA2021

Mems Shutter Based Variable Optical Attenuator Integrated With Large Core Multimode Rectangular Waveguides

Niels Quack, Hamed Sattari, Gergely Huszka, Anton Lagosh

We present the concept and design, and we report on the experimental performance of a broadband Variable Optical Attenuator (VOA) for integration with large-core rectangular multimode waveguides. Operation of an individual 221 mu m x 111 mu m optical waveg ...

IEEE2021

P-GaN Tri-Gate MOS Structure for Normally-Off GaN Power Transistors

Elison de Nazareth Matioli, Jun Ma, Luca Nela, Mohammad Samizadeh Nikooytabalvandani, Catherine Erine, Minghua Zhu, Pirouz Sohi

In this letter, we present a new concept for normally-off AlGaN/GaN-on-Si MOS-HEMTs based on the combination of p-GaN, tri-gate and MOS structures to achieve high threshold voltage (V-TH) and low on-resistance (R-ON). The p-GaN is used to engineer the band ...

Institute of Electrical and Electronics Engineers2021

Logic-in-memory based on an atomically thin semiconductor

Aleksandra Radenovic, Andras Kis, Ahmet Avsar, Zhenyu Wang, Yanfei Zhao, Mukesh Kumar Tripathi, Guilherme Migliato Marega

The growing importance of applications based on machine learning is driving the need to develop dedicated, energy-efficient electronic hardware. Compared with von Neumann architectures, which have separate processing and storage units, brain-inspired in-me ...

2020

Small-Signal Approach for Precise Evaluation of Gate Losses in Soft-Switched Wide-Band-Gap Transistors

Elison de Nazareth Matioli, Armin Jafari, Palliyage Srilak Nirmana Perera

High-frequency switching is favorable for fast transient response, small size of passive components and superior power density, especially in soft-switching topologies. At high frequencies, power dissipation due to consecutive charging/discharging of gate ...

IEEE2020

Ionizing-Radiation Response and Low-Frequency Noise of 28-nm MOSFETs at Ultrahigh Doses

Christian Enz

Total ionizing dose (TID) mechanisms are investigated in 28-nm MOSFETs via dc static and low-frequency noise measurements. nMOSFETs and pMOSFETs are irradiated up to 1 Grad(SiO2) and annealed at high temperatures. TID sensitivity depends on the channel len ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2020

Inflection Phenomenon in Cryogenic MOSFET Behavior

Christian Enz, Arnout Lodewijk M Beckers, Farzan Jazaeri

This brief reports the analytical modeling and measurements of the inflection in the MOSFET transfer characteristics at cryogenic temperatures. Inflection is the inward bending of the drain current versus gate voltage, which reduces the current in weak and ...

2020

Multispectral image sensor and method for fabrication of an image sensor

Assim Boukhayma

The present invention relates to a multispectral image sensor having a pixel array for detecting images with light components in different wavelength ranges, comprising a plurality of imaging layers each embedded in a semiconductor substrate, wherein in ea ...

2020