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Concept

Silicon on sapphire

Publications associées (32)

Bodily implant microelectrode and bodily implant microelectrode fabrication method

Sandro Carrara, Diego Ghezzi, Gian Luca Barbruni

The present invention concerns a bodily implantable or probe device and microelectrode fabrication method comprising providing at least one silicon substrate including an electronic device or unit; providing, on a first side of the silicon substrate, at le ...

2024

Lithium tantalate photonic integrated circuits for volume manufacturing

Tobias Kippenberg, Johann Emmeram Riemensberger, Mikhail Churaev, Xinru Ji, Zihan Li, Terence Albert Emile Blésin, Chengli Wang, Junyin Zhang, Xi Wang, Chen Yang, Wil Kao, Alisa Davydova

Electro-optical photonic integrated circuits (PICs) based on lithium niobate (LiNbO3) have demonstrated the vast capabilities of materials with a high Pockels coefficient1,2. They enable linear and high-speed modulators operating at complementary metal–oxi ...

2024

Silicon CMOS and InGaAs(P)/InP SPADs for NIR/SWIR detection

Utku Karaca

Applications demanding imaging at low-light conditions at near-infrared (NIR) and short-wave infrared (SWIR) wavelengths, such as quantum information science, biophotonics, space imaging, and light detection and ranging (LiDAR), have accelerated the develo ...

EPFL2024

Towards Scalable Electronics: Synthetic 2D Materials for Large-Area 2D Circuit Integration

Zhenyu Wang

In the past decades, a significant increase of the transistor density on a chip has led to exponential growth in computational power driven by Moore's law. To overcome the bottleneck of traditional von-Neumann architecture in computational efficiency, effo ...

EPFL2024

Integrated Wireless Power, Data Communication, and Thermal Sensing System for Autonomous Multisite Brain Implants

Mohammad Javad Karimi

Implanted medical devices (IMDs) have been widely developed to support the monitoring and recording of biological data inside the body or brain. Wirelessly powered IMDs, a subset of implantable electronics, have been proposed to eliminate the limitations r ...

EPFL2024

Front-End Circuits for Radiation-Hard Monolithic CMOS Sensors targeting High-Energy Physics Applications

Francesco Piro

Monolithic pixel sensors integrate the sensor matrix and readout in the same silicon die, and therefore present several advantages over the more largely used hybrid detectors in high-energy physics. They offer an easier detector assembly, lower cost, lower ...

EPFL2023

Cascaded all-optical quantization employing step-size MMI and shape-optimized power splitter

Jijun He

As a key unit of future high-throughput communications, optical analog to digital converter (OADC) with all-optical quantizer element that simultaneously possesses high resolution, large bandwidth and compact size is highly promising. A pending issue of co ...

ELSEVIER SCI LTD2023

Femtosecond laser-induced modifications and self-organization in complex glass systems

Gözden Torun

Ultrashort laser pulses, i.e., pulses emitted shorter than a picosecond, can tailor material properties by introducing permanent modifications locally in three dimensions. Remarkably, under a certain exposure condition, these modifications are accompanied ...

EPFL2023

Evaluation of HPK n plus -p planar pixel sensors for the CMS Phase-2 upgrade

Varun Sharma, Alexis Kalogeropoulos, Xin Chen, Rakesh Chawla, Konstantin Androsov, Albert Perez, Alessandro Caratelli

To cope with the challenging environment of the planned high luminosity upgrade of the Large Hadron Collider (HL-LHC), scheduled to start operation in 2029, CMS will replace its entire tracking system. The requirements for the tracker are largely determine ...

Elsevier2023

A Compact Front-End Circuit for a Monolithic Sensor in a 65-nm CMOS Imaging Technology

Edoardo Charbon, Francesco Piro

This article presents the design of a front-end circuit for monolithic active pixel sensors (MAPSs). The circuit operates with a sensor featuring a small, low-capacitance (

Ieee-Inst Electrical Electronics Engineers Inc2023

Recent results with radiation-tolerant TowerJazz 180 nm MALTA sensors

Francesco Piro

To achieve the physics goals of future colliders, it is necessary to develop novel, radiation-hard silicon sensors for their tracking detectors. We target the replacement of hybrid pixel detectors with Depleted Monolithic Active Pixel Sensors (DMAPS) that ...

ELSEVIER2022

Wafer-scale MoS2 with water-vapor assisted showerhead MOCVD

Aleksandra Radenovic, Andras Kis, Michal Daniel Macha, Yanfei Zhao, Mukesh Kumar Tripathi, Mukeshchand Thakur, Jing Zhang, Hyungoo Ji

Among numerous thin film synthesis methods, metalorganic chemical vapor deposition performed in a showerhead reactor is the most promising one for broad use in scalable and commercially adaptable two-dimensional material synthesis processes. Adapting the m ...

ROYAL SOC CHEMISTRY2022

2D MoS2 Nanopores: Wafer-scale Fabrication and Monolayer Stability for Long-term Single-Molecule Sensing

Mukeshchand Thakur

Biologically inspired solid-state nanopores are artificial openings or apertures in thin membranes similar to natural protein ion channels in a lipid bilayer of cell membranes. In solid-state nanopores, a thin insulating membrane with single or multiple po ...

EPFL2022

Wireless neuromodulation with porous silicon

Silvestro Micera

Wireless optoelectronic devices are fabricated by controlling the porosity of p-type silicon, enabling in vivo efficient, non-genetic optoelectronic modulation of peripheral nerve activity. ...

NATURE PORTFOLIO2022

Low-Power Artificial Neural Network Perceptron Based on Monolayer MoS2

Aleksandra Radenovic, Andras Kis, Zhenyu Wang, Mukesh Kumar Tripathi, Guilherme Migliato Marega

Machine learning and signal processing on the edge are poised to influence our everyday lives with devices that will learn and infer from data generated by smart sensors and other devices for the Internet of Things. The next leap toward ubiquitous electron ...

2022

Near-junction microfluidic cooling for high power-density GaN-on-Si electronics: A wafer, device, packaging, and system-level investigation

Remco Franciscus Peter van Erp

Electrification of the energy section, from generation to end-use, plays an essential role in reducing global CO2 emission. Innovations in power electronics are required to increase conversion efficiency and power density. Gallium nitride (GaN) transistors ...

EPFL2022

Smart Slit Assembly Employing Continuously Tunable MEMS Shutter

Niels Quack, Hamed Sattari, Gergely Huszka, Anton Lagosh

We present the concept and detailed design of a Smart Slit Assembly for next generation spectrometers, and we experimentally demonstrate operation of an individual 221 mu m x 111 mu m smart slit channel employing a MEMS actuated shutter to continuously mod ...

SPIE-INT SOC OPTICAL ENGINEERING2021

Laser soliton microcombs heterogeneously integrated on silicon

Tobias Kippenberg, Junqiu Liu, Rui Ning Wang, Johann Emmeram Riemensberger, Wenle Weng

Silicon photonics enables wafer-scale integration of optical functionalities on chip. Silicon-based laser frequency combs can provide integrated sources of mutually coherent laser lines for terabit-per-second transceivers, parallel coherent light detection ...

American Association for the Advancement of Science2021

Nanoscale Study of the Hole-Selective Passivating Contacts with High Thermal Budget Using C-AFM Tomography

Christophe Ballif, Franz-Josef Haug, Quentin Thomas Jeangros, Gizem Nogay, Philipp Friedrich Hermann Löper, Martin Ledinsky

We investigate hole-selective passivating contacts that consist of an interfacial layer of silicon oxide (SiOx) and a layer of boron-doped SiCx(p). The fabrication process of these contacts involves an annealing step at temperatures above 750 degrees C whi ...

AMER CHEMICAL SOC2021

Mems Shutter Based Variable Optical Attenuator Integrated With Large Core Multimode Rectangular Waveguides

Niels Quack, Hamed Sattari, Gergely Huszka, Anton Lagosh

We present the concept and design, and we report on the experimental performance of a broadband Variable Optical Attenuator (VOA) for integration with large-core rectangular multimode waveguides. Operation of an individual 221 mu m x 111 mu m optical waveg ...

IEEE2021