Silicon photonics

Silicon photonics is the study and application of photonic systems which use silicon as an optical medium. The silicon is usually patterned with sub-micrometre precision, into microphotonic components. These operate in the infrared, most commonly at the 1.55 micrometre wavelength used by most fiber optic telecommunication systems. The silicon typically lies on top of a layer of silica in what (by analogy with a similar construction in microelectronics) is known as silicon on insulator (SOI). Silicon photonic devices can be made using existing semiconductor fabrication techniques, and because silicon is already used as the substrate for most integrated circuits, it is possible to create hybrid devices in which the optical and electronic components are integrated onto a single microchip. Consequently, silicon photonics is being actively researched by many electronics manufacturers including IBM and Intel, as well as by academic research groups, as a means for keeping on track with Moore's Law, by using optical interconnects to provide faster data transfer both between and within microchips. The propagation of light through silicon devices is governed by a range of nonlinear optical phenomena including the Kerr effect, the Raman effect, two-photon absorption and interactions between photons and free charge carriers. The presence of nonlinearity is of fundamental importance, as it enables light to interact with light, thus permitting applications such as wavelength conversion and all-optical signal routing, in addition to the passive transmission of light. Silicon waveguides are also of great academic interest, due to their unique guiding properties, they can be used for communications, interconnects, biosensors, and they offer the possibility to support exotic nonlinear optical phenomena such as soliton propagation. In a typical optical link, data is first transferred from the electrical to the optical domain using an electro-optic modulator or a directly modulated laser. An electro-optic modulator can vary the intensity and/or the phase of the optical carrier.