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Concept

Taiwan Semiconductor Manufacturing Company

Publications associées (32)

Characterization and modeling of nanoscale MOSFET for ultra-low power RF IC design

Maria-Anna Chalkiadaki

The evolution and characteristics of the electronics is directly linked to the technological and societal progress. Today, there is a huge variety of electronic solutions offered, with the RF low-power systems, such as wireless sensor networks, wireless bo ...

EPFL2016

Design methodology for low power RF LNA based on the figure of merit and the inversion coefficient

Christian Enz

The complexity of radiofrequency circuit design comes from the large number of parameters to be adjusted. Constant node shrink in CMOS process and variation of technology skills significantly contribute to this complexity. The paper reports on a reliable a ...

Springer2016

On the Design of a Fault Tolerant Ripple-Carry Adder with Controllable-Polarity Transistors

Giovanni De Micheli, Pierre-Emmanuel Julien Marc Gaillardon, Eduardo Sanchez, Jian Zhang, Hassan Ghasemzadeh Mohammadi

This paper first explores the effects of faults on circuits implemented with controllable-polarity transistors. We propose a new fault model that suits the characteristics of these devices, and report the results of a SPICE-based analysis of the effects of ...

IEEE2015

A Fast Pruning Technique for Low-Power Inexact Circuit Design

Giovanni De Micheli, Pierre-Emmanuel Julien Marc Gaillardon, Luca Gaetano Amarù, Jaime Joven Murillo

Inexact Circuits are circuits in which the accuracy of the output can be traded for cost savings (energy, area and/or delay). In the context of advanced technology scaling and power density increase, inexact circuits appear to be very promising as ...

IEEE2015

Wafer-Level Hysteresis-Free Resonant Carbon Nanotube Transistors

Mihai Adrian Ionescu, Ji Cao, Sebastian Thimotee Bartsch

We report wafer-level fabrication of resonant-body, carbon nanotube (CNT)field-effect transistors (FETs) in a dual-gate configuration. An integration density of >10(6) CNTFETs/cm(2), an assembly yield of >80%, and nanoprecision have been simultaneously obt ...

Amer Chemical Soc2015

Graphene Field Effect Devices Operating in Differential Circuit Configuration

Yusuf Leblebici, Davide Sacchetto, Clemens Benedict Nyffeler

We study the concept of a basic building block for circuits using differential signaling and being based on graphene field effect devices. We fabricated a number of top-gated graphene FETs using commercially available graphene and employing electron beam l ...

Elsevier2015

Modeling Junctionless Metal-Oxide-Semiconductor Field-Effect Transistor

Farzan Jazaeri

Metal-oxide semiconductor (MOS) field-effect transistor (FET) scaling is following the prediction of the Moore's law for the past 45 years, a key factor that enabled the IC industry to cope with the everlasting demand for higher performances. However, this ...

EPFL2015

A Study on Buffer Distribution for RRAM-based FPGA Routing Structures

Giovanni De Micheli, Pierre-Emmanuel Julien Marc Gaillardon, Xifan Tang, Somayyeh Rahimian Omam

Compared to Application-Specific Integrated Circuits (ASICs), Field Programmable Gate Arrays (FPGAs) provide reconfigurablity at the cost of lower performance and higher power consumption. Exploiting a large number of programmable switche ...

IEEE2015

Reducing Energy Dissipation in ULP Systems: PLL-Free FBAR-Based Fast Startup Transmitters

Christian Enz, David Ruffieux, Raghavasimhan Thirunarayanan

The energy dissipated by conventional phase-locked-loop-based transmitters (TXs) during the long startup phase is a major bottleneck that reduces the energy autonomy of duty-cycled ultra-low-power systems. In order to tackle this problem, this paper presen ...

Institute of Electrical and Electronics Engineers2015

Resolving the Memory Bottleneck for Single Supply Near-Threshold Computing

David Atienza Alonso, Mohamed Mostafa Sabry Aly

This paper focuses on a review of state-of-the-art memory designs and new design methods for near-threshold computing (NTC). In particular, it presents new ways to design reliable low-voltage NTC memories cost-effectively by reusing available cell librarie ...

IEEE/ACM Press2014

System Level Benchmarking with Yield-Enhanced Standard Cell Library for Carbon Nanotube VLSI Circuits

Giovanni De Micheli, Pierre-Emmanuel Julien Marc Gaillardon, Shashi Kanth Bobba, Jian Zhang, Subhasish Mitra

The quest for technologies with superior device characteristics has showcased Carbon-Nanotube Field-Effect Transistors (CNFET) into limelight. In this work we present physical design techniques to improve the yield of CNFET circuits in the presence of Carb ...

Assoc Computing Machinery2014

Electrical characterization of high performance, liquid gated vertically stacked SiNW-based 3D FET biosensors

Mihai Adrian Ionescu, Montserrat Fernandez-Bolanos Badia, Hoël Maxime Guérin, Elizabeth Buitrago Godinez

A 3D vertically stacked silicon nanowire (SiNW) field effect transistor featuring a high density array of fully depleted channels gated by a backgate and one or two symmetrical platinum side-gates through a liquid has been electrically characterized for th ...

Elsevier Science Sa2014