We report on lattice-matched InAlN/GaN MOSHEMTs with an oxide-filled recess, self-aligned to the gate prepared by thermal oxidation at 800 degrees C in oxygen atmosphere. The device delivered a maximum current density of 2.4 A/mm. Pulse measurements showed ...
Institute of Electrical and Electronics Engineers2009
The X-mode radial correlation reflectometry diagnostic on JET has long suffered from strong signal attenuation in the original transmission lines. To reach higher performances, new low-attenuation corrugated circular waveguides and a new cluster of six ant ...