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Concept

Dennard scaling

Publications associées (24)

GaN-based power devices: Physics, reliability, and perspectives

Elison de Nazareth Matioli, Luca Nela, Riyaz Mohammed Abdul Khadar

Over the last decade, gallium nitride (GaN) has emerged as an excellent material for the fabrication of power devices. Among the semiconductors for which power devices are already available in the market, GaN has the widest energy gap, the largest critical ...

AIP Publishing2021

A Low-noise CMOS SPAD Pixel with 12.1 ps SPTR and 3 ns Dead Time

Edoardo Charbon, Claudio Bruschini, Francesco Gramuglia, Myung Jae Lee, Ming-Lo Wu

In this paper, we present the first CMOS SPAD with performance comparable or better than that of the best custom SPADs, to date. The SPAD-based design, fully integrated in 180 nm CMOS technology, achieves a peak PDP of 55% at 480nm with a very broad spectr ...

2022

High-Performance III-V MOSFETs and Tunnel-FETs Integrated on Silicon

Clarissa Convertino

Silicon transistor scaling is approaching its end and a transition to novel materials and device concepts is more than ever essential. High-mobility compound semiconductors are considered promising candidates to replace silicon, targeting low-power logic a ...

EPFL2020

WSe2/SnSe2 vdW heterojunction Tunnel FET with subthermionic characteristic and MOSFET co-integrated on same WSe2 flake

Mihai Adrian Ionescu, Matteo Cavalieri, Nicolò Oliva, Luca Capua

Two-dimensional/two-dimensional (2D/2D) heterojunctions form one of the most versatile technological solutions for building tunneling field effect transistors because of the sharp and potentially clean interfaces resulting from van der Waals assembly. Seve ...

NATURE PUBLISHING GROUP2020

2-D Materials for Ultrascaled Field-Effect Transistors: One Hundred Candidates under the Ab Initio Microscope

Nicola Marzari, Davide Campi

Due to their remarkable properties, single-layer 2-D materials appear as excellent candidates to extend Moore's scaling law beyond the currently manufactured silicon FinFETs. However, the known 2-D semiconducting components, essentially transition metal di ...

AMER CHEMICAL SOC2020

Giant multiphoton absorption for THz resonances in silicon hydrogenic donors

Gabriel Aeppli, Le Nguyen Hoang

The absorption of multiple photons when there is no resonant intermediate state is a well-known nonlinear process in atomic vapours, dyes and semiconductors. The N-photon absorption (NPA) rate for donors in semiconductors scales proportionally from hydroge ...

Nature Publishing Group2018

Towards high-performance polarity-controllable FETs with 2D materials, 2018 Design

Giovanni De Micheli, Giovanni Vincenzo Resta, Pierre-Emmanuel Julien Marc Gaillardon

As scaling of conventional silicon-based electronics is reaching its ultimate limit, two-dimensional semiconducting materials of the transition-metal-dichalcogenides family, such as MoS2 and WSe2, are considered as viable candidates for next-generation ele ...

IEEE2018

Novel Digital and Radio Frequency Electronic Functions Enabled by Steep-Slope Phase-Change Devices

Emanuele Andrea Casu

In the past half-century, the semiconductor industry has relied on the scaling of complementary metal-oxide-semiconductor (CMOS) transistor dimensions and on material and geometrical innovations to increase the computational density. Approaching the end of ...

EPFL2018

Scaling trends and performance evaluation of 2-dimensional polarity-controllable FETs

Giovanni De Micheli, Pierre-Emmanuel Julien Marc Gaillardon, Giovanni Vincenzo Resta

Two-dimensional semiconducting materials of the transition-metal-dichalcogenide family, such as MoS2 and WSe2, have been intensively investigated in the past few years, and are considered as viable candidates for next-generation elect ...

Nature Research2017

Operation regimes and electrical transport of steep slope Schottky Si-FinFETS

Giovanni De Micheli, Pierre-Emmanuel Julien Marc Gaillardon, Jian Zhang

In the quest for energy efficient circuits, considerable focus has been given to steep slope and polarity-controllable devices, targeting low supply voltages and reduction of transistor count. The recently proposed concept of the three-independent gated Si ...

2017

Utilizing electromagnetically induced transparency in InAs quantum dots for all-optical transistor design

Hamed Sattari

We propose a multilayer medium with semiconductor quantum dot nano-structures as a defect layer for all-optical control of the 1.55 mu m probe beam. The effect of the coupling field and incoherent pump on absorption and dispersion properties of the quantum ...

Optical Soc Amer2017

Parallel FPGA routing: Survey and challenges

Mirjana Stojilovic

As transistor scaling is slowing down [1], other opportunities for ensuring continuous performance increase have to be explored. Field programmable gate arrays (FPGAs) are in the spotlight these days: not only due to their malleability and energy efficienc ...

2017

Noise Reduction Techniques and Scaling Effects towards Photon Counting CMOS Image Sensors

Christian Enz, Assim Boukhayma

This paper presents an overview of the read noise in CMOS image sensors (CISs) based on four-transistors (4T) pixels, column-level amplification and correlated multiple sampling. Starting from the input-referred noise analytical formula, process level opti ...

Mdpi Ag2016

HRL: Efficient and Flexible Reconfigurable Logic for Near-Data Processing

Christos Kozyrakis

The energy constraints due to the end of Dennard scaling, the popularity of in-memory analytics, and the advances in 3D integration technology have led to renewed interest in near-data processing (NDP) architectures that move processing closer to main memo ...

Ieee2016

Towards Near-Threshold Server Processors

David Atienza Alonso, Luca Benini, Babak Falsafi, Marina Zapater Sancho, Pablo Garcia del Valle, Javier Picorel Obando, Ali Pahlevan, Arash Pourhabibi Zarandi

The popularity of cloud computing has led to a dramatic increase in the number of data centers in the world. The ever-increasing computational demands along with the slowdown in technology scaling has ushered an era of power-limited servers. Techniques suc ...

IEEE/ACM2016

Superfluid-insulator transition of two-dimensional disordered Bose gases

Vincenzo Savona, Pierre Bernard Henri Lugan, Joseph Saliba

We study the two-dimensional weakly repulsive Bose gas at zero temperature in the presence of correlated disorder. Using large-scale simulations, we show that the low-energy Bogoliubov cumulative density of states remains quadratic up to a critical disorde ...

American Physical Society2014

Temperature-Aware Runtime Power Management for Chip-Multiprocessors with 3-D Stacked Cache

Giovanni De Micheli, Siang-Yun Lee

The advent of 3-D fabrication technology makes it possible to stack a large amount of last-level cache memory onto a multi-core die to reduce off-chip memory accesses and, thus, increases system performance. However, the higher power density (i.e., power d ...

2014

On performance scaling and speed of junctionless transistors

Jean-Michel Sallese, Adil Koukab

A prospective study of the junctionless transistors (JLTs) scaling performances based both on TCAD and analytical evaluations of the intrinsic delay after considering on/off voltage constraints is proposed. The tradeoffs between speed and switching power p ...

Pergamon-Elsevier Science Ltd2013

Design methodology for ultra low-power analog circuits using next generation BSIM6 MOSFET compact model

Christian Enz, Anurag Mangla, Maria-Anna Chalkiadaki

The recently proposed BSIM6 bulk MOSFET compact model is set to replace the hitherto widely used BSIM3 and BSIM4 models as the de-facto industrial standard. Unlike its predecessors which were threshold voltage based, the BSIM6 core is charge based and thus ...

Elsevier2013

Exploration of Sub-VT and Near-VT 2T Gain-Cell Memories for Ultra-Low Power Applications under Technology Scaling

Andreas Peter Burg, Adam Shmuel Teman, Pascal Andreas Meinerzhagen, Robert Giterman

Ultra-low power applications often require several kb of embedded memory and are typically operated at the lowest possible operating voltage (VDD) to minimize both dynamic and static power consumption. Embedded memories can easily dominate the overall sili ...

2013