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Concept

Commutateur réseau

Publications associées (27)

IGCT Based Solid State Resonant Conversion

Dragan Stamenkovic

Driven by the environmental changes, penetration of renewables and the need for more flexible power grid, DC is reemerging as a basis for future power networks. Already established in the area of HVDC for very long distance transmission, more and more atte ...

EPFL2020

GarNet++: Improving Fast and Accurate Static 3D Cloth Draping by Curvature Loss

Pascal Fua, Mathieu Salzmann, Shaifali Parashar, Victor Constantin, Erhan Gündogdu

In this paper, we tackle the problem of static 3D cloth draping on virtual human bodies. We introduce a two-stream deep network model that produces a visually plausible draping of a template cloth on virtual 3D bodies by extracting features from both the b ...

2022

Security-aware Routing and Scheduling for Control Applications on Ethernet TSN Networks

Amir Aminifar

Today, it is common knowledge in the cyber-physical systems domain that the tight interaction between the cyber and physical elements provides the possibility of substantially improving the performance of these systems that is otherwise impossible. On the ...

ASSOC COMPUTING MACHINERY2020

Morphology and morphodynamics of braided rivers: an experimental investigation

Daniel Vito Papa

Braided rivers form some of the most fascinating fluvial patterns found on Earth. They are identifiable by their unique morphology of complex networks of intertwined channels that spread across wide floodplains. Detailed knowledge of their dynamics is need ...

EPFL2020

High-Frequency GaN-on-Si power integrated circuits based on Tri-Anode SBDs

Elison de Nazareth Matioli, Jun Ma, Luca Nela, Remco Franciscus Peter van Erp, Georgios Kampitsis, Halil Kerim Yildirim

In this work, we report on the switching performance of AlGaN/GaN lateral Tri-Anode SBDs. The Tri-Anode architecture leads to a more than 50% reduction in the device charge with respect to conventional planar structure, confirmed both by capacitive and rev ...

IEEE2020

Material and Electrical study of HfO2-Based Resistive Random Access Memories (ReRAMs)

Behnoush Attarimashalkoubeh

Resistive Random Access Memories (ReRAMs) have been researched intensively in the last past decades as a promising alternatives technology for the next-generation non-volatile memory (NVM) devices. ReRAMâ s excellent performance properties such as high sw ...

EPFL2019

The key impact of incorporated Al2O3 barrier layer on W-based ReRAM switching performance

Yusuf Leblebici, Jury Sandrini, Elmira Shahrabi, Cecilia Giovinazzo

In this article, we inspected the bipolar resistive switching behavior of W-based ReRAMs, using HfO2 as switching layer. We have shown that the switching properties can be significantly enhanced by incorporating an Al2O3 layer as a barrier layer. It stabil ...

IEEE2018