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Concept

Loi de Moore

Publications associées (31)

A hybrid III-V tunnel FET and MOSFET technology platform integrated on silicon

Mihai Adrian Ionescu, Kirsten Emilie Moselund, Clarissa Convertino

InGaAs/GaAsSb tunnelling field-effect transistors and InGaAs metal-oxide-semiconductor field-effect transistors can be integrated on the same silicon substrate using conventional CMOS-compatible processes, creating a platform for potential use in low-power ...

NATURE RESEARCH2021

Edge Disorder in Bottom-Up Zigzag Graphene Nanoribbons: Implications for Magnetism and Quantum Electronic Transport

Oleg Yazyev, Michele Pizzochero, Kristians Cernevics

We unveil the nature of the structural disorder in bottom-up zigzag graphene nanoribbons along with its effect on the magnetism and electronic transport on the basis of scanning probe microscopies and first-principles calculations. We find that edge-missin ...

AMER CHEMICAL SOC2021

H-mode scrape-off layer power width in the TCV tokamak

Basil Duval, Benoît Labit, Holger Reimerdes, Christian Gabriel Theiler, Umar Sheikh, Roberto Maurizio

Obtaining acceptable conditions at the divertor targets of a next-step fusion experiment based on the tokamak concept is expected to be particularly challenging because of the small predicted value of the plasma power exhaust channel width. An increased co ...

IOP Publishing Ltd2021

Gate energy efficiency and negative capacitance in ferroelectric 2D/2D TFET from cryogenic to high temperatures

Mihai Adrian Ionescu, Ali Saeidi, Matteo Cavalieri, Teodor Rosca, Carlotta Gastaldi, Sadegh Kamaei Bahmaei, Luca Capua

We report the fabrication process and performance characterization of a fully integrated ferroelectric gate stack in a WSe2/SnSe2 Tunnel FETs (TFETs). The energy behavior of the gate stack during charging and discharging, together with the energy loss of a ...

NATURE PORTFOLIO2021

Explosive fragmentation of Prince Rupert's drops leads to well-defined fragment sizes

Jean-François Molinari

Anyone who has ever broken a dish or a glass knows that the resulting fragments range from roughly the size of the object all the way down to indiscernibly small pieces: typical fragment size distributions of broken brittle materials follow a power law, an ...

Nature Research2021

Hardware-Software Co-Design of an RPC Processor

Arash Pourhabibi Zarandi

The booming popularity of online services has led to a major evolution in the way these services are built and deployed. To cope with such online data-intensive services, service providers deploy several massive-scale datacenters, also referred to as wareh ...

EPFL2021

A Low-noise CMOS SPAD Pixel with 12.1 ps SPTR and 3 ns Dead Time

Edoardo Charbon, Claudio Bruschini, Francesco Gramuglia, Myung Jae Lee, Ming-Lo Wu

In this paper, we present the first CMOS SPAD with performance comparable or better than that of the best custom SPADs, to date. The SPAD-based design, fully integrated in 180 nm CMOS technology, achieves a peak PDP of 55% at 480nm with a very broad spectr ...

2022

Quantum Transport in 40-nm MOSFETs a Deep-Cryogenic Temperatures

Edoardo Charbon, Andrea Ruffino, Yatao Peng

In this letter, we characterize the electrical properties of commercial bulk 40-nm MOSFETs at room and deep cryogenic temperatures, with a focus on quantum information processing (QIP) applications. At 50 mK, the devices operate as classical FETs or quantu ...

Institute of Electrical and Electronics Engineers2020

Negative Capacitance Double-Gate Junctionless FETs: A Charge-Based Modeling Investigation of Swing, Overdrive and Short Channel Effect

Mihai Adrian Ionescu, Jean-Michel Sallese, Farzan Jazaeri, Amin Rassekh

In this article, an analytical predictive model of the negative capacitance (NC) effect in symmetric long channel double-gate junctionless transistor is proposed based on a charge-based model. In particular, we have investigated the effect of the thickness ...

2020

Microscopic Detection Analysis of Single Molecules in MoS2 Membrane Nanopores

Aleksandra Radenovic, Michael Graf

A systematic microscopic analysis of the various resistive effects involved in the electronic detection of single biomolecules in a nanopore of a MoS2 nanoribbon is presented. The variations of the transverse electronic current along the two-dimensional (2 ...

2020

Electrical characterization of high performance, liquid gated vertically stacked SiNW-based 3D FET biosensors

Mihai Adrian Ionescu, Montserrat Fernandez-Bolanos Badia, Hoël Maxime Guérin, Elizabeth Buitrago Godinez

A 3D vertically stacked silicon nanowire (SiNW) field effect transistor featuring a high density array of fully depleted channels gated by a backgate and one or two symmetrical platinum side-gates through a liquid has been electrically characterized for th ...

Elsevier Science Sa2014