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Concept

Silicon controlled rectifier

Publications associées (27)

900 V Reverse-Blocking GaN-on-Si MOSHEMTs With a Hybrid Tri-Anode Schottky Drain

Elison de Nazareth Matioli, Jun Ma, Minghua Zhu

In this letter, we present high-performance GaN-on-Si metal-oxide-semiconductor high electron mobility transistors with record reverse-blocking (RB) capability. By replacing the conventional ohmic drain with a hybrid tri-anode Schottky drain, a high revers ...

Institute of Electrical and Electronics Engineers2017

Field Plate Design for Low Leakage Current in Lateral GaN Power Schottky Diodes: Role of the Pinch-Off Voltage

Elison de Nazareth Matioli, Jun Ma

In this letter, we demonstrate a general model to reduce the reverse leakage current (I-R) in high-voltage AlGaN/GaN Schottky diodes (SBDs) by engineering the pinchoff voltage (V-p) of their field plates (FPs). The maximum voltage drop at the Schottky junc ...

Institute of Electrical and Electronics Engineers2017

Input-Series and Output-Series High Voltage Converter with Active Balancing Circuit for N-1 Operation

Alfred Rufer, Tiago Alexandre Nabais Lima

An input-series/output-series converter dedicated to high power applications is presented. The converter is composed of plural MF transformers based on DC-DC sub-converters. The series connection allows reaching input-voltage levels in the range of several ...

Ieee2016

Gas Turbine: Optimization of Energy Production and High Efficiency by Using Power Electronics

Alfred Rufer, Aziza Benaboud

The use of gas turbines in the power generation industry has been increasing. Their demand represents more than 50% of the world market of thermal power plants. Electric power generators using gas turbines as power sources are connected to the turbines thr ...

Elsevier Science Bv2016

94-GHz Large-Signal Operation of AlInN/GaN High-Electron-Mobility Transistors on Silicon With Regrown Ohmic Contacts

Nicolas Grandjean, Jean-François Carlin, Marco Malinverni, Lorenzo Lugani

We report the first 94-GHz (W-band) large-signal performance of AlInN/GaN high-electron-mobility transistors (HEMTs) grown on high-resistivity silicon (111) substrates. A maximum output power density of 1.35 W/mm and peak power-added-efficiency of 12% are ...

Institute of Electrical and Electronics Engineers2015

Thermal control of ionic transport and fluid flow in nanofluidic channels

Philippe Renaud, Arnaud Bertsch, Mojtaba Taghipoor

In this work, we report a nanofluidic gating mechanism that uses the thermal effect for modulating the ionic transport inside nanofluidic channels. The control of the ionic transport inside a nanochannel is demonstrated using electrical conductivity. A the ...

2015

Investigation of the thermal effects in nanofluidic transport and their application in gating

Mojtaba Taghipoor

Scaling down to nanometer size fluidic conduits has opened a new window into the world of sensing and manipulation of nanoscale species. Thousands of publications and hundreds of patents in this field are only a starting point for exploring and manipulatin ...

EPFL2015