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Concept

Octogone

Publications associées (4)

Modeling the Shape Evolution of Selective Area Grown Zn3P2 Nanoislands

Anna Fontcuberta i Morral, Jean-Baptiste Leran, Simon Robert Escobar Steinvall, Mahdi Zamani, Rajrupa Paul, Elias Zsolt Stutz

Selective area growth of zinc phosphide (Zn3P2) on InP provides a pathway to high-quality semiconductor nanostructures and textured thin films made of earth-abundant elements. In the precoalescence stage, Zn3P2 emerges in the form of nanoislands undergoing ...

AMER CHEMICAL SOC2021

The uniform symbolic topology property for diagonally F-regular algebras

Javier Alonso Carvajal Rojas

Let k be a field of positive characteristic. Building on the work of the second named author, we define a new class of k-algebras, called diagonally F-regular algebras, for which the so-called Uniform. Symbolic Topology Property (USTP) holds effectively. W ...

2020

A 130nm CMOS Single Photon Avalanche Diode

Edoardo Charbon, Cristiano Niclass, Marek Gersbach

The first implementation of a single photon avalanche diode (SPAD) is reported in 130nm CMOS technology. The SPAD is fabricated as p+/nwell junction with octagonal shape. Premature edge breakdown is prevented through a guard ring of p-well around the p+ an ...

2007

A Single Photon Avalanche Diode Implemented in 130nm CMOS Technology

Edoardo Charbon, Cristiano Niclass, Marek Gersbach

We report on the ﬁrst implementation of a single photon avalanche diode (SPAD) in 130 nm complementary metal–oxide–semiconductor (CMOS) technology. The SPAD is fabricated as p+/n-well junction with octagonal shape. A guard ring of p-well around the p+ anod ...

2007