Publications associées à Depletion and enhancement modes

Publications associées (30)

Understanding and mitigating resistive losses in fired passivating contacts: role of the interfaces and optimization of the thermal budget

Christophe Ballif, Franz-Josef Haug, Aïcha Hessler-Wyser, Luca Massimiliano Antognini, Sofia Libraro, Audrey Marie Isabelle Morisset, Julien Hurni, Ezgi Genç

This work presents a study of p-type passivating contacts based on SiCx formed via a rapid thermal processing (RTP) step, using conditions compatible with the firing used to sinter screen-printed metallization pastes in industry. The contributions of the t ...

Elsevier2023

Development of next-generation microfluidic systems for enhanced, faster, and cost-effective immunoassays for tissue diagnostics - Ac electrothermal flow & Acoustofluidics

Muaz Salama Abdelmonem Draz

The application of microfluidics in the field of surface-based assays and more specifically, the spatial molecular profiling of tumor tissues has gained a lot of interest, especially with the increased interest in personalized medicine and targeted therapy ...

EPFL2023

Enhancement-mode Multi-channel AlGaN/GaN Transistors with LiNiO Junction Tri-Gate

Elison de Nazareth Matioli, Luca Nela, Taifang Wang

Multi-channel GaN power device, consisting of stacking multiple two-dimensional-electron-gas (2DEG) channels, has been demonstrated to achieve unprecedented on-state performance while maintaining high breakdown voltage (VBR). However, the large carrier den ...

Institute of Electrical and Electronics Engineers2022

Modelling electronic transport in monocrystalline metal oxide gas sensors: from the surface kinetics to the experimental response

Roberto Guarino, Gianluca Piccinini

Gas sensing systems and devices based on metal oxides are widely spreading due to their high performance in terms of sensor response and relatively low costs. Despite several experimental studies, as well as molecular simulations, are available in the lite ...

Elsevier2022

Low-temperature and rapid photo-annealing process for metal-oxide thin-film transistors using combined excimer deep-ultraviolet and intensely pulsed light irradiation

Jaemin Kim

The fabrication of high-performance metal-oxide-based thin-film transistors (TFTs) on flexible and transparent polymer substrates by solution processes has garnered substantial interest, particularly for manufacturing flex-ible electronics. However, the an ...

ELSEVIER2022

A 500 x 500 Dual-Gate SPAD Imager With 100% Temporal Aperture and 1 ns Minimum Gate Length for FLIM and Phasor Imaging Applications

Edoardo Charbon, Claudio Bruschini, Arin Can Ülkü, Andrei Ardelean, Paul Mos, Michael Alan Wayne

In this article, we report on SwissSPAD3 (SS3), a 500 x 500 pixel single-photon avalanche diode (SPAD) array, fabricated in 0.18-mu m CMOS technology. In this sensor, we introduce a novel dual-gate architecture with two contiguous temporal windows, or gate ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

Multi-channel nanowire devices for efficient power conversion

Elison de Nazareth Matioli, Vasiliki Tileli, Jun Ma, Luca Nela, Tzu-Hsien Shen, Catherine Erine, Taifang Wang

Nanowire-based devices can potentially be of use in a variety of electronic applications, from ultrascaled digital circuits to 5G communication networks. However, the devices are typically restricted to low-power applications due to the relatively low elec ...

2021

Defect formation and mitigation during laser powder bed fusion of copper

Carl Tore Viktor Lindström

Additive manufacturing (AM) is a group of processing technologies which has the potential to revolutionize manufacturing by allowing easy manufacturing of complex shapes and small series. One AM-method which is of high interest for processing of metals is ...

EPFL2021

Free Carrier Mobility, Series Resistance, and Threshold Voltage Extraction in Junction FETs

Jean-Michel Sallese, Farzan Jazaeri, Matthias Bucher

In this brief, extraction methods are proposed for determining the essential parameters of double gate junction field-effect transistors (FETs). First, a novel method for determining free carrier effective mobility, similar to a recently proposed method fo ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2020

Physical Model of Low-Temperature to Cryogenic Threshold Voltage in MOSFETs

Christian Enz, Arnout Lodewijk M Beckers, Farzan Jazaeri

This article presents a physical model of the threshold voltage in MOSFETs valid down to 4.2 K. Interface traps close to the band edge modify the saturating temperature behavior of the threshold voltage observed in cryogenic measurements. Dopant freezeout, ...

2020

WSe2/SnSe2 vdW heterojunction Tunnel FET with subthermionic characteristic and MOSFET co-integrated on same WSe2 flake

Mihai Adrian Ionescu, Matteo Cavalieri, Nicolò Oliva, Luca Capua

Two-dimensional/two-dimensional (2D/2D) heterojunctions form one of the most versatile technological solutions for building tunneling field effect transistors because of the sharp and potentially clean interfaces resulting from van der Waals assembly. Seve ...

NATURE PUBLISHING GROUP2020

Depletion Effect-mediated Association of Carbon Nanotube-Polymer Composites and Their Application as Inexpensive Electrode Support Materials

Paul Joseph Dyson, Zhangjun Huang

The association between carbon nanotubes (CNTs) and polymers to afford functional composites has been attributed to enthalpic interactions, neglecting the entropic depletion effect, in which bound solvents are released during the association process. Here, ...

AMER CHEMICAL SOC2020

EDGE2D-EIRENE simulations of the influence of isotope effects and anomalous transport coefficients on near scrape-off layer radial electric field

Olivier Sauter, Basil Duval, Henri Weisen, Martinus Adela Maria Gijs, Jonathan Graves, Ambrogio Fasoli, Stefano Coda, Patrick Blanchard, Richard Pitts, Yves Martin, Yann Camenen, Javier García Hernández, Duccio Testa, Marco Wischmeier, Miguel Fernández Ruiz, Nicola Vianello, Sun Hee Kim, Federico Nespoli, Alessandro Pau, David Pfefferlé, Davide Galassi, Jonathan Marc Philippe Faustin, Dalziel Joseph Wilson, Cristian Sommariva, Hamish William Patten, Samuel Lanthaler, Jan Horacek, José Pedro Rebelo Ferreira Marques, Mikhail Maslov, Liang Yao, Daniel Scott Alessi, Jonnathan Cesar Hidalgo Acosta, Antonio José Pereira de Figueiredo, Alberto Hernando de Castro, Julio Rodriguez, Li Shuai, Rebecca Hill

EDGE2D-EIRENE (the 'code') simulations show that radial electric field, Er, in the near scrape-off layer (SOL) of tokamaks can have large variations leading to a strong local E x B shear greatly exceeding that in the core region. This was pointed out in si ...

2019

CJM: A Compact Model for Double-Gate Junction FETs

Jean-Michel Sallese, Farzan Jazaeri, Matthias Bucher

The double-gate (DG) junction field-effect transistor (JFET) is a classical electron device, with a simple structure that presents many advantages in terms of device fabrication but also its principle of operation. The device has been largely used in low-n ...

2019

Electromagnetic Fields Associated With the M‐Component Mode of Charge Transfer

Marcos Rubinstein, Mohammad Azadifar, Davide Pavanello, Lixia He

In upward flashes, charge transfer to ground largely takes place during the initial continuous current (ICC) and its superimposed pulses (ICC pulses). ICC pulses can be associated with either M-component or leader/return-stroke like modes of charge transfe ...

2019

Negative Capacitance as Universal Digital and Analog Performance Booster for Complementary MOS Transistors

Mihai Adrian Ionescu, Christian Enz, Farzan Jazaeri, Igor Stolichnov, Ali Saeidi

Boltzmann electron energy distribution poses a fundamental limit to lowering the energy dissipation of conventional MOS devices, a minimum increase of the gate voltage, i.e. 60 mV, is required for a 10-fold increase in drain-to-source current at 300 K. Neg ...

Nature Research2019

Enhancing solar disinfection of water in PET bottles by optimized in-situ formation of iron oxide films. From heterogeneous to homogeneous action modes with H2O2 vs. O-2 - Part 2: Direct use of (natural) iron oxides

César Pulgarin, Sami Rtimi, Stefanos Giannakis

Solar disinfection (SODIS) is a well-accepted intervention method, leading to an improvement in contaminated water sources. In this work, we attempted to further enhance the bacterial inactivation process during light exposure. By means of iron oxide addit ...

ELSEVIER SCIENCE SA2019

Long-lived coupled peeling ballooning modes preceding ELMs on JET

Olivier Sauter, Martinus Adela Maria Gijs, Jonathan Graves, Ambrogio Fasoli, Stefano Coda, Basil Duval, Henri Weisen, Richard Pitts, Yves Martin, Javier García Hernández, Duccio Testa, Miguel Fernández Ruiz, Nicola Vianello, Robin Humphry-Baker, Sun Hee Kim, Federico Nespoli, Patrick Blanchard, Alessandro Pau, David Pfefferlé, Davide Galassi, Jonathan Marc Philippe Faustin, Cristian Sommariva, Hamish William Patten, Samuel Lanthaler, Jan Horacek, Yann Camenen, Bruno Emanuel Ferreira De Sousa Correia, José Pedro Rebelo Ferreira Marques, Mikhail Maslov, Marco Wischmeier, Dalziel Joseph Wilson, Liang Yao, Daniel Scott Alessi, Arnout Lodewijk M Beckers, Ana Francisca Leal Silva Soares, Jonnathan Cesar Hidalgo Acosta, Antonio José Pereira de Figueiredo, Partha Dutta, Pierre-Thomas Paul Brun, Pedro Camilo de Oliveira e Silva, Alberto Hernando de Castro, Julio Rodriguez, Vlad Trifa, Li Shuai, Rebecca Hill

In some JET discharges, type-I edge localised modes (ELMs) are preceded by a class of low-frequency oscillations (Perez et al 2004 Nucl. Fusion 44 609). While in many cases the ELM is triggered during the growth phase of this oscillation, it is also observ ...

IOP Publishing Ltd2019

Double gate n-type WSe2 FETs with high-k top gate dielectric and enhanced electrostatic control

Mihai Adrian Ionescu, Emanuele Andrea Casu, Matteo Cavalieri, Nicolò Oliva

We propose and experimentally demonstrate double-gated n-type WSe 2 FETs with excellent top gate high-k dielectric layer. Under back gate control, the devices behave as n-type enhancement transistors, with ON/OFF current ratios larger than 6 orders of magn ...

IEEE2018

Polarity Control of Top Gated Black Phosphorous FETs by Workfunction Engineering of Pre-Patterned Au and Ag Embedded Electrodes

Mihai Adrian Ionescu, Igor Stolichnov, Wolfgang Amadeus Vitale, Emanuele Andrea Casu, Nicolò Oliva

We propose and experimentally demonstrate top-gated complementary n- and p-type black phosphorous field effect devices (FETs) by engineering the workfunction of pre-patterned electrodes embedded in a SiO2 bottom layer. Pre-patterned electrodes offer the ad ...

2018