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Concept

Transistor

Publications associées (32)

Single Chip Dynamic Nuclear Polarization Microsystems

Nergiz Sahin Solmaz

Nuclear magnetic resonance (NMR) methods are powerful tools employed in many fields, including physics, chemistry, material science, biology, and medicine. The use of NMR methodologies in an even wider range of applications is often hindered by the relativ ...

EPFL2023

Atomic-scale Characterization of Strain and Gate effects on Two-dimensional Materials by Scanning Tunneling Microscopy

Jz -Yuan Juo

Strain is an inevitable phenomenon in two-dimensional (2D) material, regardless of whether the film is suspended or supported. Moreover, strain is known to alter the physical and chemical properties, such as the band gap, charge carrier effective masses, d ...

EPFL2023

New ultrahigh-speed device concepts: from THz nanoplasma devices to glass-like electronics for neuromorphic computation

Mohammad Samizadeh Nikooytabalvandani

There is a never-ending push for electronic systems to provide faster operation speeds, higher energy efficiencies, and higher power capabilities at smaller scales. These requirements are apparent in different areas of electronics, from radiofrequency (RF) ...

EPFL2023

Additive and digital manufacturing of transient sensors and bioelectronics

Nicolas Francis Fumeaux

Transient electronics have emerged as a promising class of devices, capable of breaking down without harmful side effects to their environment. They have tremendous potential as bioresorbable electronics for temporary applications in the human body, and as ...

EPFL2023

Homogenous power distribution along gyrotron collector walls

Stefano Alberti, Jean-Philippe Hogge, Damien Fasel, Ugo Siravo, Jérémie Dubray, Pierre-François Isoz, François Jean Gaston Legrand, Miguel Filipe Silva Füglister

EC RF power sources will play a major role in the future operation of large scale tokamaks (ITER, DEMO). A 1MW/170GHz gyrotron is the standard RF power unit considered for ITER. Even though the efficiency of such devices has been significantly increased th ...

2023

Single-photon avalanche diode fabricated in standard 55 nm bipolar-CMOS-DMOS technology with sub-20 V breakdown voltage

Edoardo Charbon, Claudio Bruschini, Myung Jae Lee, Won Yong Ha

This paper presents a single-photon avalanche diode (SPAD) in 55 nm bipolar-CMOSDMOS (BCD) technology. In order to realize a SPAD having sub-20 V breakdown voltage for mobile applications while preventing high tunneling noise, a high-voltage N-well availab ...

Optica Publishing Group2023

Energy Efficient Sensing using Steep Slope Devices

Teodor Rosca

Today, we are witnessing the Internet of Things (IoT) revolution, which facilitates and improves our lives in many aspects, but comes with several challenges related to the technology deployment at large scales. Handling ever growing amounts of information ...

EPFL2022

LiNiO Junction Gate for High-performance Enhancement-mode GaN Power Transistor

Taifang Wang

GaN metal-oxide-semiconductor high electron mobility transistors (MOS)HEMTs) offer outstanding properties for next-generation power electronics devices. The high conductivity, high voltage blocking capability, high operation frequency, and device-level int ...

EPFL2022

Fabrication of Single-Crystalline InSb-on-Insulator by Rapid Melt Growth

Anna Fontcuberta i Morral, Nicholas Paul Morgan

InSb has the smallest bandgap and highest electron mobility among III-V semiconductors and is widely used for photodetectors and high-frequency electronic applications. Integration of InSb directly on Si would drastically reduce the fabrication cost and en ...

Wiley2021

On the Modeling of Organic Electrochemical Transistors

Matteo Cucchi

Due to their synaptic functionality based on interacting electronic and ionic charge carriers, organic electrochemical transistors (OECTs) appeal as highly attractive candidates for a new generation of organic neuromorphic devices. Despite their acknowledg ...

SPIE-INT SOC OPTICAL ENGINEERING2022

Blocking the Charge Recombination with Diiodide Radicals by TiO2 Compact Layer in Dye-Sensitized Solar Cells

Ulf Anders Hagfeldt, Nikolaos Vlachopoulos, Kazuteru Nonomura

The addition of a compact titanium dioxide (TiO2) layer between the fluorine-doped tin oxide (FTO) coated glass substrate and the mesoporous TiO2 layer in the dye-sensitized solar cell (DSC) based on the iodide/triiodide redox couple (I-/I-3(-)) is known t ...

ELECTROCHEMICAL SOC INC2019

Monolithic perovskite/silicon-heterojunction tandem solar cells processed at low temperature

Michael Graetzel, Mohammad Khaja Nazeeruddin, Ulf Anders Hagfeldt, Michael Saliba, Antonio Abate, Juan-Pablo Correa-Baena, Ludmilla Steier

Tandem solar cells combining silicon and perovskite absorbers have the potential to outperform state-of-the-art high efficiency silicon single junction devices. However, the practical fabrication of monolithic silicon/perovskite tandem solar cells is chall ...

Royal Soc Chemistry2016