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Concept

Fonction NON-ET

Publications associées (27)

Dynamical Behavior and Stability Analysis of Hydromechanical Gates

Paolo Perona, Fabian Alexander Bernhard

This study revisits the stability of hydromechanical gates for upstream water surface regulation, also known as AMIL gates. AMIL gates are used in irrigation canals, where they are often installed in series. From the regulation perspective, instabilities a ...

American Society of Civil Engineers2017

Negative Capacitance Field Effect Transistors; Capacitance Matching and non-Hysteretic Operation

Mihai Adrian Ionescu, Christian Enz, Farzan Jazaeri, Igor Stolichnov, Ali Saeidi, Francesco Bellando

This work experimentally demonstrates negative capacitance MOSFETs in hysteretic and non-hysteretic modes of operation. A PZT capacitor is externally connected to the gate of commercial nMOSFETs fabricated in 28nm CMOS technology to explore the negative ca ...

IEEE2017

INFLUENCE OF THE INITIAL VOLUME OF LOCK EXCHANGE GRAVITY CURRENTS ON THE SEDIMENT ENTRAINMENT CAPACITY

Jessica Zordan

In the lock-exchange technique used to produce gravity currents, two fluids of different densities are initially at rest in a tank and separated by a vertical barrier, the lock gate. When this gate is suddenly removed, the two fluids come into contact and, ...

2017

Computationally Efficient Multiple-Independent-Gate Device Model

Giovanni De Micheli, Pierre-Emmanuel Julien Marc Gaillardon, Gianluca Piccinini, Mariagrazia Graziano

Nanowire Field Effect Transistors (FETs) with multiple independent gates around a silicon channel feature ultimate gate control and are regarded as promising candidates for next generation transistors. Being inherently more complex than conventional gate-a ...

Institute of Electrical and Electronics Engineers2016

A Fault Tolerant Ripple-Carry Adder with Controllable-Polarity Transistors

Giovanni De Micheli, Pierre-Emmanuel Julien Marc Gaillardon, Jian Zhang, Hassan Ghasemzadeh Mohammadi

This paper deals with the effects of faults on circuits implemented with controllable-polarity transistors. We propose a new fault model that suits the characteristics of these devices, and report the results of a SPICE-based analysis of the effects of fau ...

2016

Disorder engineering and conductivity dome in ReS2 with electrolyte gating

Oleg Yazyev, Andras Kis, Dumitru Dumcenco, Dmitry Ovchinnikov, Fernando Gargiulo, Diego José Pasquier

Atomically thin rhenium disulphide (ReS2) is a member of the transition metal dichalcogenide family of materials. This two-dimensional semiconductor is characterized by weak interlayer coupling and a distorted 1T structure, which leads to anisotropy in ele ...

Nature Publishing Group2016

Single field effect transistor capacitor-less memory device and method of operating the same

Mihai Adrian Ionescu, Arnab Biswas, Nilay Dagtekin

A single field effect transistor capacitor-less memory device, and method of operating the same, including a drain region, a source region, an intrinsic channel region between the drain region and the source region forming the single field effect transisto ...

Technology Transfer Office EPFL2016