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Concept

Perturbation par une particule isolée

Publications associées (14)

Active Voltage Balancing with Seamless Integration into Dual Gate Driver for Series Connection of SiC MOSFETs

Drazen Dujic, Rui Wang

The versatility of half-bridge configuration of silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) power module contributes to its widespread adoption, highlighting the popularity and significance of its corresponding dual gat ...

2024

A Dual-Channel Gate Driver Design with Active Voltage Balancing Circuit for Series Connection of SiC MOSFETs

Drazen Dujic, Rui Wang

Dual-channel gate driver is commonly utilized in the industry for accommodating the widespread use of half-bridge power modules. As wide-bandgap devices become increasingly prevalent due to their superior switching characteristics compared with conventiona ...

2024

Development of a Data Concentrator ASIC for the High Luminosity upgrade of the CMS Outer Tracker detector with tracking trigger

Simone Scarfì

With the increasing capabilities of the microelectronics technology, future particle detectors in high energy physics will be able to yield high-level features that are not only simple geometrical positions or energy measurement in the silicon sensors used ...

EPFL2021

Prediction of optically-triggered amplification in phototransistor with SPICE circuit simulators

Jean-Michel Sallese, Chiara Rossi

Modeling of optoelectronic devices involves long and complex numerical simulations, usually performed with TCAD tools. Numerical simulations provide accurate results for a single device but are not feasible when dealing with a full circuit comprising sever ...

SPIE-INT SOC OPTICAL ENGINEERING2020

Impact of Memory Voltage Scaling on Accuracy and Resilience of Deep Learning Based Edge Devices

David Atienza Alonso, Andreas Peter Burg, Miguel Peon Quiros, Martino Ruggiero, Andrea Bonetti, Flavio Ponzina, Benoît Walter Denkinger, Soumya Subhra Basu, Szabolcs Balási

Energy consumption is a significant obstacle to integrate deep learning into edge devices. Two common techniques to curve it are quantization, which reduces the size of the memories (static energy) and the number of accesses (dynamic energy), and voltage s ...

2020

Strengthened Information-theoretic Bounds on the Generalization Error

Michael Christoph Gastpar, Amedeo Roberto Esposito, Ibrahim Issa

The following problem is considered: given a joint distribution P XY and an event E, bound P XY (E) in terms of P X P Y (E) (where P X P Y is the product of the marginals of P XY ) and a measure of dependence of X and Y. Such bounds have direct application ...

IEEE2019

Research and development of an intelligent particle tracker detector electronic system

Alessandro Caratelli

In high energy physics, silicon particles detectors are widely used in tracking applications. They feature high-resolution measurements of the traversing particle positioning and frequently its energy. With the new possibilities introduced by technology sc ...

EPFL2019

1GigaRad TID impact on 28 nm HEP analog circuits

Christian Enz

An in-depth analysis of modern technologies could represent the base for the success of the High Luminosity Large Hadron Collider experiments. The requirement is a new reliable electronics in 1Grad-TID environments. For the purpose, single devices in TSMC ...

ELSEVIER SCIENCE BV2018

Doping-Free Complementary Logic Gates Enabled by Two-Dimensional Polarity-Controllable Transistors

Giovanni De Micheli, Giovanni Vincenzo Resta, Pierre-Emmanuel Julien Marc Gaillardon

Atomically thin two-dimensional (2D) materials belonging to transition metal dichalcogenides, due to their physical and electrical properties, are an exceptional vector for the exploration of next-generation semiconductor devices. Among them, due to the po ...

2018

Operation regimes and electrical transport of steep slope Schottky Si-FinFETS

Giovanni De Micheli, Pierre-Emmanuel Julien Marc Gaillardon, Jian Zhang

In the quest for energy efficient circuits, considerable focus has been given to steep slope and polarity-controllable devices, targeting low supply voltages and reduction of transistor count. The recently proposed concept of the three-independent gated Si ...

2017

Mass distributions marginalized over per-event errors

Frédéric Guillaume Dupertuis

We present generalizations of the Crystal Ball function to describe mass peaks in which the per event mass resolution is unknown and marginalized over. The presented probability density functions are tested using a series of toy Monte Carlo samples generat ...

Elsevier Science Bv2014

On the Exploitation of the Inherent Error Resilience of Wireless Systems under Unreliable Silicon

Andreas Peter Burg, Georgios Karakonstantis

In this paper, we investigate the impact of circuit misbehavior due to parametric variations and voltage scaling on the performance of wireless communication systems. Our study reveals the inherent error resilience of such systems and argues that sufficien ...

Ieee2012

Hysteretic inverter-on-a-body-tied-wire based on less-than-10mV/decade abrupt punch-through impact ionization MOS (PIMOS) switch

Mihai Adrian Ionescu, Didier Bouvet, Kirsten Emilie Moselund, Vincent Pott

This work reports for the first time on a cascadable NMOS inverter based on punch-through impact ionization MOSFET (PIMOS) integrated on a single body-tied silicon wire. The PIMOS device acts as a single-transistor-latch and shows abrupt current switching ...

2008

Multi-bit error tolerant caches using two-dimensional error coding

Babak Falsafi

In deep sub-micron ICs, growing amounts of ondie memory and scaling effects make embedded memories increasingly vulnerable to reliability and yield problems. As scaling progresses, soft and hard errors in the memory system will increase and single error ev ...

2007