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Publications associées (32)

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van der Waals Epitaxy of Co10–xZn10–yMnx+y Thin Films: Chemical Composition Engineering and Magnetic Properties

Anna Fontcuberta i Morral, Dirk Grundler, Jean-Baptiste Leran, Simon Robert Escobar Steinvall, Rajrupa Paul, Ping Che, Mohammad Hamdi, Andrea Mucchietto

Topologically protected magnetic skyrmions have raised interest for future spintronics applications. One of the main challenges is the synthesis of room temperature skyrmion-hosting materials that are compatible with thin-film technology. We present an app ...

2021

Doping challenges and pathways to industrial scalability of III–V nanowire arrays

Anna Fontcuberta i Morral, Wonjong Kim, Lucas Güniat, Valerio Piazza

Semiconductor nanowires (NWs) have been investigated for decades, but their application into commercial products is still difficult to achieve, with triggering causes related to the fabrication cost and structure complexity. Dopant control at the nanoscale ...

2021

GaAs nanoscale membranes: prospects for seamless integration of III-Vs on silicon

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Martin George Friedl, Luca Francaviglia, Nicholas Paul Morgan

The growth of compound semiconductors on silicon has been widely sought after for decades, but reliable methods for defect-free combination of these materials have remained elusive. Recently, interconnected GaAs nanoscale membranes have been used as templa ...

2020

Hot-Hole versus Hot-Electron Transport at Cu/GaN Heterojunction Interfaces

Giulia Tagliabue

Among all plasmonic metals, copper (Cu) has the greatest potential for realizing optoelectronic and photochemical hot-carrier devices, thanks to its CMOS compatibility and outstanding catalytic properties. Yet, relative to gold (Au) or silver (Ag), Cu has ...

AMER CHEMICAL SOC2020

Permanent photodoping of plasmonic gallium-ZnO nanocrystals

Reinis Ignatans

Donor dopants in oxide semiconductors are compensated not only by valuable electrons but also by other point defects, leading to a decrease in electric conductivity and infrared absorption. We demonstrate that the electron compensation mechanism in Ga dope ...

ROYAL SOC CHEMISTRY2020

III-nitride photonic cavities

Nicolas Grandjean, Raphaël Butté

Owing to their wide direct bandgap tenability, III-nitride (III-N) compound semiconductors have been proven instrumental in the development of blue light-emitting diodes that led to the so-called solid-state lighting revolution and blue laser diodes that a ...

WALTER DE GRUYTER GMBH2020

Crystal Phase Engineering in III-V Semiconductor Films: from Epitaxy to Devices

Philipp Staudinger

Crystal phase engineering is an exciting pathway to enhance the properties of conventional semiconductors. Metastable SiGe presents a direct band gap well suited for optical devices whereas wurtzite (WZ) phosphide alloys enable efficient light emission in ...

EPFL2020

Raman spectroscopy and lattice dynamics calculations of tetragonally-structured single crystal zinc phosphide (Zn3P2) nanowires

Anna Fontcuberta i Morral, Jean-Baptiste Leran, Mahdi Zamani, Simon Robert Escobar Steinvall, Elias Zsolt Stutz, Rajrupa Paul, Mirjana Dimitrievska

Earth-abundant and low-cost semiconductors, such as zinc phosphide (Zn3P2), are promising candidates for the next generation photovoltaic applications. However, synthesis on commercially available substrates, which favors the formation of defects, and cont ...

2020

Increasing Functionality of III-V Nanowires on Silicon Substrates

Wonjong Kim

Progress in nanotechnology, including fabrication and characterization tools, opened up the unprecedented low dimensional materials era, where we can manipulate and structure matter on a size scale that we could not reach before. Due to many interesting pr ...

EPFL2020

van der Waals Epitaxy of Earth-Abundant Zn3P2 on Graphene for Photovoltaics

Anna Fontcuberta i Morral, Roland Logé, Cyril Cayron, Jean-Baptiste Leran, Simon Robert Escobar Steinvall, Mahdi Zamani, Elias Zsolt Stutz, Rajrupa Paul, Nicolas Philippe Laurent Humblot, Shreyas Sanjay Joglekar

Earth-abundant semiconducting materials are a potential solution for large-scale deployment of solar cells at a lower cost. Zinc phosphide (Zn3P2) is one such Earth-abundant material with optoelectronic properties suitable for photovoltaics. Herein, we rep ...

2020

First-principles calculations of charge carrier mobility and conductivity in bulk semiconductors and two-dimensional materials

Samuel Poncé, Feliciano Giustino

One of the fundamental properties of semiconductors is their ability to support highly tunable electric currents in the presence of electric fields or carrier concentration gradients. These properties are described by transport coefficients such as electro ...

IOP PUBLISHING LTD2020

Growth and characterisation of earth-abundant semiconductor nanostructures for solar energy harvesting

Simon Robert Escobar Steinvall

Zinc phosphide (Zn3P2) is a compound semiconductor based on earth-abundant elements with functional properties ideal for solar cell applications. Cheap, abundant, and renewable energy sources are increasingly imperative due to the imminent threat posed by ...

EPFL2020