Publications associées à Silver mica capacitor

500 MHz high resolution proximity sensors with fully integrated digital counter

Giovanni Boero, Nergiz Sahin Solmaz, Reza Farsi

We report on the design and characterization of two inductive proximity sensors based on LC oscillators operating at 500 MHz. The distance from the target is obtained by measuring the oscillation frequency variation. Both sensors contain an off-chip LC res ...

ELSEVIER SCI LTD2023

A Generalized Phase-Shift PWM Extension for Improved Natural and Active Balancing of Flying Capacitor Multilevel Inverters

Elison de Nazareth Matioli, Georgios Kampitsis

The emergence of wide bandgap power devices has brought the attention back to the flying capacitor (FC) multilevel inverters with a large number of stages, in an effort to increase the power density by minimizing the passive components. The main challenge ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

Blumino: The First Fully Integrated Analog SiPM With On-Chip Time Conversion

Edoardo Charbon, Andrei Ardelean, Emanuele Ripiccini, Andrada Alexandra Muntean, Esteban Venialgo Araujo

Blumino is the first analog silicon photomultiplier with integrated amplifier, comparator and time-to-digital converter (TDC). The combination of a photodetector together with on-chip readout circuitry enables system-level advantages, such as internal para ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2021

Analysis of Large-Signal Output Capacitance of Transistors using Sawyer–Tower Circuit

Elison de Nazareth Matioli, Remco Franciscus Peter van Erp, Armin Jafari, Palliyage Srilak Nirmana Perera, Georgios Kampitsis

A detailed analysis on the Sawyer–Tower method used in the measurement of large-signal output capacitance (Co) of power transistors is presented, followed by important design recommendations to obtain accurate results. Key factors affecting the proper impl ...

2020

Ultrasoft Liquid Metal Elastomer Foams with Positive and Negative Piezopermittivity for Tactile Sensing

Yegor Piskarev

Soft, capacitive tactile (pressure) sensors are important for applications including human-machine interfaces, soft robots, and electronic skins. Such capacitors consist of two electrodes separated by a soft dielectric. Pressing the capacitor brings the el ...

WILEY-V C H VERLAG GMBH2020

Band Filling and Cross Quantum Capacitance in Ion-Gated Semiconducting Transition Metal Dichalcogenide Monolayers

Helmuth Berger, Christophe Berthod

Ionic liquid gated field-effect transistors (FETs) based on semiconducting transition metal dichalcogenides (TMDs) are used to study a rich variety of extremely interesting physical phenomena, but important aspects of how charge carriers are accumulated in ...

2019

Design techniques for a stable operation of cryogenic field-programmable gate arrays

Edoardo Charbon

In this paper, we show how a deep-submicron field-programmable gate array (FPGA) can be operated more stably at extremely low temperatures through special firmware design techniques. Stability at low temperatures is limited through long power supply wires ...

2018

Virtual Submodule Concept for Fast Semi-Numerical Modular Multilevel Converter Loss Estimation

Drazen Dujic, Alexandre François Christe

During the design phase of a modular multilevel converter (MMC), an accurate loss evaluation of the submodule (SM) plays an important role. In this paper, a method based on the analytical description of the MMC key waveforms that allows to directly obtain ...

Institute of Electrical and Electronics Engineers2017

A 35mW 8 b 8.8 GS/s SAR ADC with Low-Power Capacitive Reference Buffers in 32nm Digital SOI CMOS

Yusuf Leblebici, Lukas Kull, Thomas Toifl

An asynchronous 8x interleaved redundant SAR ADC achieving 8.8GS/s at 35mW and 1V supply is presented. The ADC features pass-gate clocking for time-skew minimization and per-channel gain control based on low-power reference voltage buffers. The sub-ADC sta ...

2013

A 3.1 mW 8b 1.2 GS/s Single-Channel Asynchronous SAR ADC With Alternate Comparators for Enhanced Speed in 32 nm Digital SOI CMOS

Yusuf Leblebici, Thomas Toifl, Lukas Kull

An 8b 1.2 GS/s single-channel Successive Approximation Register (SAR) ADC is implemented in 32 nm CMOS, achieving 39.3 dB SNDR and a Figure-of-Merit (FoM) of 34 fJ per conversion step. High-speed operation is achieved by converting each sample with two alt ...

Institute of Electrical and Electronics Engineers2013

Piezoresponse force microscopy on doubly clamped KNbO3 nanowires

Jian Wang, Nava Setter

We present piezoresponse force microscopy measurements on individual integrated potassium niobate (KNbO3) nanowires. The devices consist of KNbO3 nanowires on SiO2 substrates being mechanically clamped and electrically biased by lithographically defined me ...

AIP American Institute of Physics2008