We study the existence, uniqueness, and regularity of the solution to the stochastic reaction-diffusion equation (SRDE) with colored noise F-center dot:partial derivative(t)u = aijuxixj +biuxi + cu - bu1+beta +xi u1+gamma F-center dot, (t, x) is ...
We present a search for extremely red, dust-obscured, z > 7 galaxies with JWST/NIRCam+MIRI imaging over the first 20 arcmin(2) of publicly available Cycle 1 data from the COSMOS-Web, CEERS, and PRIMER surveys. Based on their red color in F277W-F444W (simil ...
The complexes [Co (NH3)(6)][Ir (C2O4)(3)] and [Ir(NH3)(6)][Co (C2O4)(3)center dot H2O have previously been synthesized and their thermal properties studied. The [Ir(NH3)(6)][Ir(C2O4)(3)] and [Co(NH3)(6)][Co(C2O4)(3)]center dot 3H(2)O complexes considered h ...
We present a comparison between approximated methods for the construction of mock catalogues based on the halo-bias mapping technique. To this end, we use as reference a high-resolution N-body simulation of 38403 dark matter particles on a 400 h(-1) Mpc cu ...
Four new coordination complexes with silver(I) ions and nitrogenous aromatic heterocyclic carboxylic ligands, namely [AB(4)(Pac)(Phen)(4)]center dot 8H(2)O (1), {[AB(4)(Pztc)(bPe)(3)] center dot 5H(2)O}(n) (2), [Ag-4(Hmptc)(2)(4,4'-bPY)(3)] center dot 4.5H ...
Naturally occurring intrastrand oxidative crosslink lesions have proven to be a potent source of endogenous DNA damage. Among the variety of lesions that can be formed and have been identified, G[8-5]C damage (in which the C8 atom of a guanine is covalentl ...
center dot PURPOSE: To describe new affected individuals of Franceschetti's original pedigree of hereditary recurrent erosion and to classify a unique entity called Franceschetti corneal dystrophy. ...
We present deep Hubble Space Telescope NICMOS 2 F160W band observations of the central 56 '' x 57 '' (14 pc x 14.25 pc) region around R136 in the starburst cluster 30Dor (NGC 2070) located in the Large Magellanic Cloud. Our aim is to derive the stellar ini ...
Silicon has become the most important material for the semiconductor industry, due to several advantages like good heat conductance or the high quality of its oxide. Nevertheless, for opto-electronic devices, the limitation of its indirect band-gap has ant ...