Unit

Laboratory of Semiconductor Materials (SB/STI)

Laboratory

Summary

The Laboratory of Semiconductor Materials at EPFL focuses on synthesizing novel semiconductor nanostructures, particularly nanowires, to study their unique properties for applications in quantum science and renewable energy harvesting. They work with materials like Si, III-As, III-Sb, and II-Vs, aiming for sustainable electronic and optoelectronic applications. The lab also emphasizes the use of abundant earth crust elements. In addition to research, the lab is involved in teaching activities for bachelor and master students, offering semester projects related to spectroscopy, crystal morphology, optical assessment, and more.

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Summary

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Related people (2)

Anna Fontcuberta i Morral

2014 Associate Professor at the Institut des Matériaux, EPFL 2008 Assistant Professor Tenure Track at the Institut des Matériaux, EPFL 2009 Habilitation in Physics, Technische Universität München 2005-2010 Marie Curie Excellence Grant Team Leader at Walter Schottky Institut, Technische Universität München, on leave from Centre National de la Recherche Scientifique (CNRS, France) 2004-2005 Visiting Scientist at the California Institute of Technology, on leave from CNRS; Senior Scientist and co-founder of Aonex Technologies (a startup company for large area layer transfer of InP and Ge on foreign substrates for the main application of multi-junction solar cells) 2003 Permanent Research Fellow at CNRS, Ecole Polytechnique, France 2001-2002 Postdoctoral Scholar at the California Institute of Technology Study of wafer bonding and hydrogen-induced exfoliation processes for integration of mismatched materials in views of photovoltaic applications Sponsor: Professor Harry A. Atwater 1998-2001 PhD in Materials Science, Ecole Polytechnique Study of polymorphous silicon: growth mechanisms, optical and structural properties. Application to Solar Cells and Thin Film Transistors Advisor: Pere Roca i Cabarrocas 1997-1998 Diplôme dEtudes Approfondis (D.E.A.) in Materials Science at Université Paris XI, France . 1993-1997 BA in Physics at Universitat de Barcelona

Benjamin Dwir

Academic title: Dr. Birth date: 24.10.1959 Nationality: Swiss At EPFL since: 1988

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Related publications (31)

Laboratory of Semiconductor Materials (SB/STI)

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Towards Scalable Electronics: Synthetic 2D Materials for Large-Area 2D Circuit Integration

Study of growth-induced point defects and their impact on InGaN-based optoelectronic devices

Shortwave Infrared-Sensitive, Narrowband Organic Upconversion Devices with a Gain