Publication

Effect of Metal-Organic Composition Fluctuation on the Atmospheric-Pressure Metal-Organic Vapor-Phase Epitaxy Growth of GaAlAs/GaAs and GaInAs/InP Structures

Jean-Daniel Ganière
1991
Journal Articles

Abstract

We report, for the first time, a direct relationship between the composition fluctuation on the ternary layer grown by atmospheric pressure metalorganic vapor-phase epitaxy (AP-MOVPE) and the pulsed character of high-vapor-pressure metalorganic (MO) flows. We show that the grwoth rates of GaAlAs and GaInAs layers, grown with trimethylgallium (TMG) and triethylgallium (TEG) sources, are of tens of angstrom per bubble for the methyl case and a few angstrom for the ethyl one.

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Jean-Daniel Ganière
1991
Journal Articles

Abstract

Official source

Related concepts (11)

Chemical vapor deposition

Chemical vapor deposition (CVD) is a vacuum deposition method used to produce high-quality, and high-performance, solid materials. The process is often used in the semiconductor industry to produce thin films. In typical CVD, the wafer (substrate) is exposed to one or more volatile precursors, which react and/or decompose on the substrate surface to produce the desired deposit. Frequently, volatile by-products are also produced, which are removed by gas flow through the reaction chamber.

Organic solar cell

An organic solar cell (OSC) or plastic solar cell is a type of photovoltaic that uses organic electronics, a branch of electronics that deals with conductive organic polymers or small organic molecules, for light absorption and charge transport to produce electricity from sunlight by the photovoltaic effect. Most organic photovoltaic cells are polymer solar cells. The molecules used in organic solar cells are solution-processable at high throughput and are cheap, resulting in low production costs to fabricate a large volume.

Metalorganic vapour-phase epitaxy

Metalorganic vapour-phase epitaxy (MOVPE), also known as organometallic vapour-phase epitaxy (OMVPE) or metalorganic chemical vapour deposition (MOCVD), is a chemical vapour deposition method used to produce single- or polycrystalline thin films. It is a process for growing crystalline layers to create complex semiconductor multilayer structures. In contrast to molecular-beam epitaxy (MBE), the growth of crystals is by chemical reaction and not physical deposition.

Related publications (1)

Effect of Metal-Organic Composition Fluctuation on the Atmospheric-Pressure Metal-Organic Vapor-Phase Epitaxy Growth of GaAlAs/GaAs and GaInAs/InP Structures

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